M D Vilisova


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Person Info

NAME

M D

SURNAME

Vilisova

Publications in SciGraph latest 50 shown

  • 2018-12-01 Electrophysical and Physical-Chemical Properties of Ohmic Contacts to III-N Compounds in RUSSIAN PHYSICS JOURNAL
  • 2018-10 Physical Properties of Solid Solutions InxAl1–xN in RUSSIAN PHYSICS JOURNAL
  • 2010-05 Studying electric field profiles in GaAs-based detector structures by Kelvin probe force microscopy in TECHNICAL PHYSICS LETTERS
  • 2008-02 Diffusion of chromium into epitaxial gallium arsenide in SEMICONDUCTORS
  • 2006-12 Defects in the GaAs and InGaAs layers grown by low-temperature molecular-beam epitaxy in RUSSIAN PHYSICS JOURNAL
  • 2006-08 X-ray detectors based on epitaxial gallium arsenide in TECHNICAL PHYSICS
  • 2004-01 Excess arsenic and point defects in GaAS grown by molecular beam epitaxy at low temperatures in JOURNAL OF STRUCTURAL CHEMISTRY
  • 2003-09 Effect of growth conditions on incorporation of Si into Ga and As sublattices of GaAs during molecular-beam epitaxy in SEMICONDUCTORS
  • 2002-09 Doping of GaAs layers with Si under conditions of low-temperature molecular beam epitaxy in SEMICONDUCTORS
  • 2002-08 Low-Temperature Molecular-Beam Epitaxy of GaAs: Effect of Excess Arsenic on the Structure and Properties of the GaAs Layers in RUSSIAN PHYSICS JOURNAL
  • 2002-04 Influence of the Substrate Orientation on the Silicon Capture into A- and B- Sublattices of Gallium Arsenide in Molecular Beam Epitaxy in RUSSIAN PHYSICS JOURNAL
  • 2002-01 Low-temperature molecular beam epitaxy of GaAs: Influence of crystallization conditions on structure and properties of layers in CRYSTALLOGRAPHY REPORTS
  • 2000-10 The Effect of Flow Ratio between Elements of Groups III and V on the Structure and Properties of InGaAs Layers Grown by Low-Temperature Molecular-Beam Epitaxy in RUSSIAN PHYSICS JOURNAL
  • 1999-08 Structure and properties of InGaAs layers grown by low-temperature molecular-beam epitaxy in SEMICONDUCTORS
  • 1999-01 Formation of a transition layer during heteroepitaxy of III–V compound semiconductors in gas-phase epitaxy systems in RUSSIAN PHYSICS JOURNAL
  • 1998-09 Structure and properties of epitaxial GaAs and InGaAs films grown by low-temperature molecular-beam epitaxy in RUSSIAN PHYSICS JOURNAL
  • 1995-02 Electrophysical properties of epitaxial gallium arsenide doped with acceptor impurities in RUSSIAN PHYSICS JOURNAL
  • 1992-10 Conductivity compensation and deep traps in epitaxial n-GaAs irradiated by electrons in RUSSIAN PHYSICS JOURNAL
  • 1992-02 Structure and properties of epitaxial layers of InxGa1−xAs grown from the gas phase in RUSSIAN PHYSICS JOURNAL
  • 1990-06 Doping mechanisms of gallium arsenide with tin in gas phase epitaxy processes in SOVIET PHYSICS JOURNAL
  • 1989-01 Influence of thermal processing on the properties of Sn-doped GaAs epitaxial layers in SOVIET PHYSICS JOURNAL
  • 1988-01 Growth and impurity-trapping kinetics in sulfur-doped gallium arsenide epitaxy in SOVIET PHYSICS JOURNAL
  • 1986-05 Formation of centers with deep levels in gaseous phase epitaxy of gallium arsenide in SOVIET PHYSICS JOURNAL
  • 1985-07 Investigation of the structure and properties of sulfur-doped expitaxial gallium arsenide layers in SOVIET PHYSICS JOURNAL
  • 1983-11 Determination of the position of the Π-ν-junction in epitaxial structures of gallium arsenide doped with iron in SOVIET PHYSICS JOURNAL
  • 1983-06 Kinetics of capture of tellurium by {111} gallium arsenide faces in the GaAs-AsCl3-H2 system at various supersaturations in SOVIET PHYSICS JOURNAL
  • 1982-11 Effects of growth temperature and substrate orientation on the entry of tellurium into epitaxial gallium arsenide films in SOVIET PHYSICS JOURNAL
  • 1981-11 High-speed s-diodes with GaAs:Fe structure, produced by gas-phase epitaxy in SOVIET PHYSICS JOURNAL
  • 1978-10 Local impurity inhomogeneities in autoepitaxial layers of gallium arsenide in SOVIET PHYSICS JOURNAL
  • 1978-05 Growth of callium arsenide under various initial supersaturations in a Ga-AsCl3-H2 gas-transport system in SOVIET PHYSICS JOURNAL
  • 1975-08 Investigation of transition layers in epitaxial gallium arsenide detection of layers by decoration in SOVIET PHYSICS JOURNAL
  • 1973-05 Investigation of transitional layers in epitaxial gallium arsenide. Effect of the substrate processing method on the electron and dopant distributions in SOVIET PHYSICS JOURNAL
  • 1973-02 Investigation of transitional layers in epitaxial gallium arsenide: Micromorphology and electron distribution in the layers, in dependence on the growth time in an iodine system in SOVIET PHYSICS JOURNAL
  • 1971-12 The effect of the substrate temperature on the doping level of epitaxial layers of GaA s and on the distribution of impurity in them in SOVIET PHYSICS JOURNAL
  • 1971-11 Basic laws and causes governing the formation of transitional layers in the autoepitaxy of gallium arsenide in SOVIET PHYSICS JOURNAL
  • 1971-01 Electron and impurity distributions in epitaxial n-type gallium arsenide in SOVIET PHYSICS JOURNAL
  • 1970-02 Epitaxial gaas p-n junctions grown in a closed iodide system with various iodine concentrations in SOVIET PHYSICS JOURNAL
  • 1967-04 Effects of growth conditions on the electrical properties of epitaxial p-n junctions in gallium arsenide in SOVIET PHYSICS JOURNAL
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