Roman A Salii

Ontology type: schema:Person     

Person Info


Roman A



Publications in SciGraph latest 50 shown

  • 2021-10 Formation of Heterostructures of GaP/Si Photoconverters by the Combined Method of MOVPE and PEALD in TECHNICAL PHYSICS LETTERS
  • 2021-04 Increasing the Efficiency of 520- to 540-nm Laser Radiation Photovoltaic Converters Based on GaInP/GaAs Heterostructures in TECHNICAL PHYSICS LETTERS
  • 2020-12 Electrical Contacts to InP-based Structures with a Zn-doped Subcontact Layer to p-InP in TECHNICAL PHYSICS LETTERS
  • 2020-12 High-Speed Photodetectors for the 950–1100 nm Optical Range Based on In0.4Ga0.6As/GaAs Quantum Well-Dot Nanostructures in TECHNICAL PHYSICS LETTERS
  • 2020-10-09 Comparative Analysis of the Optical and Physical Properties of InAs and In0.8Ga0.2As Quantum Dots and Solar Cells Based on them in SEMICONDUCTORS
  • 2020-06 The Influence of the Number of Rows of GaInAs Quantum Objects on the Saturation Current of GaAs Photoconverters in TECHNICAL PHYSICS LETTERS
  • 2020-04-28 Effects of Doping of Bragg Reflector Layers on the Electrical Characteristics of InGaAs/GaAs Metamorphic Photovoltaic Converters in SEMICONDUCTORS
  • 2018-09-06 Recombination in GaAs p–i–n Structures with InGaAs Quantum-Confined Objects: Modeling and Regularities in SEMICONDUCTORS
  • 2018-06-07 In0.8Ga0.2As Quantum Dots for GaAs Solar Cells: Metal-Organic Vapor-Phase Epitaxy Growth Peculiarities and Properties in SEMICONDUCTORS
  • 2017-01 Optimization of structural and growth parameters of metamorphic InGaAs photovoltaic converters grown by MOCVD in SEMICONDUCTORS
  • 2016-04 Heterostructures of metamorphic GaInAs photovoltaic converters fabricated by MOCVD on GaAs substrates in SEMICONDUCTORS
  • 2015-08-02 Site-Controlled Growth of Single InP QDs in SEMICONDUCTORS
  • 2015-08-02 Determination of the technological growth parameters in the InAs-GaAs system for the MOCVD synthesis of “Multimodal” InAs QDs in SEMICONDUCTORS
  • 2014-05-07 Subtractive method for obtaining the dark current-voltage characteristic and its types for the residual (nongenerating) part of a multi-junction solar cell in SEMICONDUCTORS
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