N L Bazhenov

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Publications in SciGraph latest 50 shown

  • 2021-03 Suppressing the Temperature Dependence of the Wavelength in Heterostructures with a Staggered Type-II InAsSb/InAsSbP Heterojunction in SEMICONDUCTORS
  • 2020-12-04 Optical and Structural Properties of HgCdTe Solid Solutions with a High CdTe Content in SEMICONDUCTORS
  • 2020-05-16 Optical Studies of Molecular-Beam Epitaxy-Grown Hg1−xCdxTe with x = 0.7–0.8 in JOURNAL OF ELECTRONIC MATERIALS
  • 2020-02 Experimental Study and Simulation of the Spectral Characteristics of LED Heterostructures with an InAs Active Region in TECHNICAL PHYSICS LETTERS
  • 2019-10-14 Examination of the Capabilities of Metalorganic Vapor-Phase Epitaxy in Fabrication of Thin InAs/GaSb Layers in TECHNICAL PHYSICS
  • 2019-06 An Optical Study of Disordering in Cadmium Mercury Telluride Solid Solutions in TECHNICAL PHYSICS LETTERS
  • 2019-04 Carrier Lifetime in Semiconductors with Band-Gap Widths Close to the Spin-Orbit Splitting Energies in SEMICONDUCTORS
  • 2019-02 On the Possibility of Manufacturing Strained InAs/GaSb Superlattices by the MOCVD Method in SEMICONDUCTORS
  • 2018-05-15 Photoluminescence of Molecular Beam Epitaxy-Grown Mercury Cadmium Telluride: Comparison of HgCdTe/GaAs and HgCdTe/Si Technologies in JOURNAL OF ELECTRONIC MATERIALS
  • 2018-04-10 Luminescence studies of HgCdTe- and InAsSb-based quantum-well structures in APPLIED NANOSCIENCE
  • 2017-03 Effect of composition fluctuations on radiative recombination in narrow-gap semiconductor solid solutions in TECHNICAL PHYSICS
  • 2017-02-10 Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2–300 K in SEMICONDUCTORS
  • 2016-02-19 Defects in mercury-cadmium telluride heteroepitaxial structures grown by molecular-beam epitaxy on silicon substrates in SEMICONDUCTORS
  • 2015-09-03 Temperature dependence of the carrier lifetime in narrow-gap CdxHg1–xTe solid solutions: Radiative recombination in SEMICONDUCTORS
  • 2015-04-16 Temperature dependence of the carrier lifetime in CdxHg1 − xTe narrow-gap solid solutions with consideration for Auger processes in SEMICONDUCTORS
  • 2015-03-04 Acceptor states in heteroepitaxial CdHgTe films grown by molecular-beam epitaxy in SEMICONDUCTORS
  • 2014-08-31 Defects in heteroepitaxial CdHgTe/Si layers and their behavior under conditions of implanted p+-n photodiode structure formation in TECHNICAL PHYSICS LETTERS
  • 2014-02-14 Photoluminescence of CdHgTe solid solutions subjected to low-energy ion treatment in SEMICONDUCTORS
  • 2013-10-17 High-temperature photoluminescence of CdHgTe solid solutions grown by molecular-beam epitaxy in TECHNICAL PHYSICS
  • 2012-10-10 Electrical and optical properties of CdHgTe films grown by molecular-beam epitaxy on silicon substrates in SEMICONDUCTORS
  • 2012-09-27 Analysis of photoconductivity spectra with a strongly delayed photoresponse in TECHNICAL PHYSICS
  • 2012-06-05 Optical transitions in CdxHg1 − xTe-based quantum wells and their analysis with account for the actual band structure of the material in SEMICONDUCTORS
  • 2011-07-08 Photoluminescence of Hg1 − xCdxTe based heterostructures grown by molecular-beam epitaxy in SEMICONDUCTORS
  • 2010-12-29 Photoluminescence of CdHgTe based nanoheterostructures in TECHNICAL PHYSICS LETTERS
  • 2010-12-29 Photoluminescence of CdHgTe epilayers grown on silicon substrates in TECHNICAL PHYSICS LETTERS
  • 2009-02 Effect of annealing on the optical and photoelectrical properties of CdxHg1 − xTe heteroepitaxial structures for the middle infrared range in TECHNICAL PHYSICS LETTERS
  • 2007-12 Impact-ionization-stimulated electroluminescence in isotype n-GaSb/n-AlGaAsSb/n-GaInAsSb heterostructures in TECHNICAL PHYSICS LETTERS
  • 2007-06 1.5–1.8 μm photoluminescence of MBE-grown HgCdTe films in TECHNICAL PHYSICS LETTERS
  • 2007-02 Dielectric function of quasi-2D semiconductor nanostructures in SEMICONDUCTORS
  • 2006-04-09 Effect of intraband carrier relaxation on the threshold characteristics of quantum well lasers in SEMICONDUCTORS
  • 2005-10 Temperature dependence of the threshold current of QW lasers in SEMICONDUCTORS
  • 2002-11 Electrical properties of CdxHg1−xTe and ZnxCdyHg1−x−yTe modified by low-energy ion bombardment in TECHNICAL PHYSICS LETTERS
  • 1997-10 Electroluminescence of the unconfined heterostructure p-GaInAsSb/p-InAs at liquid-helium temperatures in SEMICONDUCTORS
  • 1992-01 Carrier scattering mechanisms in manganese-doped gallium antimonide in RUSSIAN PHYSICS JOURNAL
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