Vasiliy S Varavin


Ontology type: schema:Person     


Person Info

NAME

Vasiliy S

SURNAME

Varavin

Publications in SciGraph latest 50 shown

  • 2016-12 Mercury vacancies as divalent acceptors in HgyTe1 – y/CdxHg1 – xTe structures with quantum wells in SEMICONDUCTORS
  • 2016-12 CdHgTe heterostructures for new-generation IR photodetectors operating at elevated temperatures in SEMICONDUCTORS
  • 2016-07-11 Electrical and Optical Studies of Defect Structure of HgCdTe Films Grown by Molecular Beam Epitaxy in RUSSIAN PHYSICS JOURNAL
  • 2016-04 Electrophysical properties of CdxHg1–xTe (x = 0.3) films grown by molecular beam epitaxy on Si(013) substrates in PHYSICS OF THE SOLID STATE
  • 2016-02-19 Defects in mercury-cadmium telluride heteroepitaxial structures grown by molecular-beam epitaxy on silicon substrates in SEMICONDUCTORS
  • 2015-12-10 Impurity-induced photoconductivity of narrow-gap Cadmium–Mercury–Telluride structures in SEMICONDUCTORS
  • 2014-08-31 Defects in heteroepitaxial CdHgTe/Si layers and their behavior under conditions of implanted p+-n photodiode structure formation in TECHNICAL PHYSICS LETTERS
  • 2014-06-12 CdHgTe heterostructures on large-area Si(310) substrates for infrared photodetector arrays of the short-wavelength spectral range in SEMICONDUCTORS
  • 2013-10-17 High-temperature photoluminescence of CdHgTe solid solutions grown by molecular-beam epitaxy in TECHNICAL PHYSICS
  • 2013-09 HgCdTe structures for dual-band photodetectors operating in the 3–5 and 8–12 µm spectral ranges in OPTOELECTRONICS, INSTRUMENTATION AND DATA PROCESSING
  • 2013-05-23 Dual-wavelength stimulated emission from a double-layer CdxHg1 − xTe structure at wavelengths of 2 and 3 μm in JETP LETTERS
  • 2011-08-13 The electrical characteristics of MBE n-Hg1–xCdxTe (x = 0.29–0.31) MIS structures with sharp inhomogeneities in composition in RUSSIAN PHYSICS JOURNAL
  • 2011-07-08 Photoluminescence of Hg1 − xCdxTe based heterostructures grown by molecular-beam epitaxy in SEMICONDUCTORS
  • 2011-03 The influence of hydrogenation on the electrical properties of the CdxHg1 − xTe epitaxial structures in SEMICONDUCTORS
  • 2010-12-29 Photoluminescence of CdHgTe based nanoheterostructures in TECHNICAL PHYSICS LETTERS
  • 2010-12-29 Photoluminescence of CdHgTe epilayers grown on silicon substrates in TECHNICAL PHYSICS LETTERS
  • 2010-07-17 Electrophysical characteristics of MIS structures based on graded band-gap MBE HgCdTe with grown in situ CdTe as a dielectric in RUSSIAN PHYSICS JOURNAL
  • 2010-04-24 Stimulated radiation at a wavelength of 2.5 μm at room temperature from optically excited CdxHg1 − xTe-based structures in SEMICONDUCTORS
  • 2010-01 Concentration of vacancies in the metal sublattice of cadmium and mercury tellurides solid solutions depending on composition in RUSSIAN JOURNAL OF PHYSICAL CHEMISTRY A
  • 2009-12-17 Formation of acceptor centers under the action of redox media on the surface of CdxHg1 − xTe films in SEMICONDUCTORS
  • 2009-08 Effect of post-implantation annealing on the current-voltage characteristics of IR photodiodes based on p-HgCdTe in OPTOELECTRONICS, INSTRUMENTATION AND DATA PROCESSING
  • 2009-06-28 Determining the normal and lateral dark current components in n-p photodiodes based on p-CdxHg1 − xTe heteroepitaxial structures with x = 0.22 in TECHNICAL PHYSICS LETTERS
  • 2008-11 Properties of MIS structures based on graded-gap HgCdTe grown by molecular beam epitaxy in SEMICONDUCTORS
  • 2008-06-13 Effect of the arsenic cracking zone temperature on the efficiency of arsenic incorporation in CdHgTe films in molecular-beam epitaxy in SEMICONDUCTORS
  • 2008-06-13 Dependence of the electrical parameters of MBE-grown CdxHg1 − xTe films on the level of doping with indium in SEMICONDUCTORS
  • 2008-02 Factors determining the morphology of CdxHg1−xTe films in the course of molecular beam epitaxy in JOURNAL OF SURFACE INVESTIGATION: X-RAY, SYNCHROTRON AND NEUTRON TECHNIQUES
  • 2008-02 Stimulated radiation of optically pumped Cd xHg1 − x Te-Based heterostructures at room temperature in SEMICONDUCTORS
  • 2007-08 A focal plane array detector based on a variband isotype P-p junction in MCT layers grown by molecular beam epitaxy in OPTOELECTRONICS, INSTRUMENTATION AND DATA PROCESSING
  • 2007-08 A microwave detector based on an MCT photodiode for subthermonuclear plasma research in OPTOELECTRONICS, INSTRUMENTATION AND DATA PROCESSING
  • 2007-06 1.5–1.8 μm photoluminescence of MBE-grown HgCdTe films in TECHNICAL PHYSICS LETTERS
  • 2006-11 Spontaneous and stimulated emission from CdxHg1−x Te semiconductor films in SEMICONDUCTORS
  • 2006-10 Photoelectrical characteristics of MIS structures on the basis of graded-band-gap n-HgCdTe (x = 0.21–0.23) in RUSSIAN PHYSICS JOURNAL
  • 2006-09 The dynamics of accumulation of electrically active radiation defects on implantation of graded-band-gap HgCdTe films grown by MBE in RUSSIAN PHYSICS JOURNAL
  • 2005-09 Observation of antiphase domains in CdxHg1−xTe films on silicon by the phase contrast method in atomic force microscopy in JETP LETTERS
  • 2004-12-31 Photoelectrical Characteristics of MIS Structures on the Basis of Heteroepitaxial HgCdTe in RUSSIAN PHYSICS JOURNAL
  • 2001-09 Molecular-beam epitaxy of mercury-cadmium-telluride solid solutions on alternative substrates in SEMICONDUCTORS
  • 1996 Growth of and Defect Formation in CdxHg1-xTe Films During Molecular-Beam Epitaxy in GROWTH OF CRYSTALS
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