Efim L Portnoi

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Efim L



Publications in SciGraph latest 50 shown

  • 2020-04 Generation of Picosecond Pulses by Lasers with Distributed Feedback at a Wavelength of 1064 nm in TECHNICAL PHYSICS LETTERS
  • 2018-11 Emission Regimes of 1.06 μm Spectral Bandwidth Two-Sectional Lasers with Quantum Dot Based Active Layer in TECHNICAL PHYSICS LETTERS
  • 2018-02 Mode-Locked Lasers with “Thin” Quantum Wells in 1.55 μm Spectral Range in TECHNICAL PHYSICS LETTERS
  • 2016-06-17 Switching between the mode-locking and Q-switching modes in two-section QW lasers upon a change in the absorber properties due to the Stark effect in SEMICONDUCTORS
  • 2015-10-13 Emission spectra of a laser based on an In(Ga)As/GaAs quantum-dot superlattice in SEMICONDUCTORS
  • 2015-10 Power increase in Q-switched two-sectional quantum well lasers due to Stark effect in TECHNICAL PHYSICS LETTERS
  • 2013-02 RF linewidth in passively mode locked quantum well lasers in TECHNICAL PHYSICS LETTERS
  • 2012-10-02 Room temperature passive mode-locked laser based on InAs/GaAs quantum-dot superlattice in NANOSCALE RESEARCH LETTERS
  • 2012-04 The effect of barrier width in coupled asymmetric double quantum well structure on passive mode-locking region of existence in TECHNICAL PHYSICS LETTERS
  • 2012-01-07 Polarization dependences of electroluminescence and absorption of vertically correlated InAs/GaAs QDs in SEMICONDUCTORS
  • 2011-09-29 Passive mode-locked laser based on quantum dot superlattice in TECHNICAL PHYSICS LETTERS
  • 2011-08-18 Room-temperature optical absorption in the InAs/GaAs quantum-dot superlattice under an electric field in SEMICONDUCTORS
  • 2010-11-25 Features of mode locking in laser with quantum well in broad waveguide layer in TECHNICAL PHYSICS LETTERS
  • 2009-04-28 Absorption in laser structures with coupled and uncoupled quantum dots in an electric field at room temperature in SEMICONDUCTORS
  • 2008-07 Suppression of Q-switching instabilities in broadened-waveguide monolithic mode-locked laser diodes in OPTICAL AND QUANTUM ELECTRONICS
  • 2007-08 Polarization dependence of the stark shift in the absorption edge of InGaAs/GaAs quantum dot heterostructures in TECHNICAL PHYSICS LETTERS
  • 2006-12 Two-fold mechanism of the interaction of incident light with a phase diffraction grating in TECHNICAL PHYSICS LETTERS
  • 2002-01-01 Analysis of Nonlinear Optical-Electromagnetic Interactions in Ultrafast Mode-Locked Laser Diodes in ULTRA-WIDEBAND SHORT-PULSE ELECTROMAGNETICS 4
  • 2001-07 'On-wafer' surface implanted high power, picosecond pulse InGaAsP/InP (λ = 1.53–1.55 μm) laser diodes in OPTICAL AND QUANTUM ELECTRONICS
  • 2000-01 Visualization of the ion projected range region in GaAs irradiated with argon ions in TECHNICAL PHYSICS LETTERS
  • 1999-07 Picosecond semiconductor lasers with a multisection saturable absorber, fabricated by heavy ion implantation in TECHNICAL PHYSICS LETTERS
  • 1999-05 Near-threshold mode synchronization and Q switching in diode lasers with a fast saturated absorber in TECHNICAL PHYSICS LETTERS
  • 1997-09 Phase effects in a semiconductor laser with diffraction extraction of radiation in TECHNICAL PHYSICS LETTERS
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