Yu G Sidorov


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Person Info

NAME

Yu G

SURNAME

Sidorov

Publications in SciGraph latest 50 shown

  • 2020-09 Effect of Surface Treatment on the Charge Density at the Interface between GdHgTe Epitaxial Films and AlO Grown by Atomic Layer Deposition in OPTOELECTRONICS, INSTRUMENTATION AND DATA PROCESSING
  • 2020-09 Molecular Beam Epitaxy of CdHgTe: Current State and Horizons in OPTOELECTRONICS, INSTRUMENTATION AND DATA PROCESSING
  • 2020-08 The Effect of the Growth Temperature on the Passivating Properties of the Al2O3 Films Formed by Atomic Layer Deposition on the CdHgTe Surface in TECHNICAL PHYSICS LETTERS
  • 2020-03 HgCdTe-Based 640 × 512 Matrix Midwave Infrared Photodetector in JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS
  • 2019-09-16 Photodetectors with 384 × 288 Matrix Elements for the Infrared Range of 8–10 Microns in JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS
  • 2019-09-16 A Megapixel Matrix Photodetector of the Middle Infrared Range in JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS
  • 2017-11 Dynamics of Growth of the Native Oxide of CdxHg1−xTe in OPTOELECTRONICS, INSTRUMENTATION AND DATA PROCESSING
  • 2016-12 CdHgTe heterostructures for new-generation IR photodetectors operating at elevated temperatures in SEMICONDUCTORS
  • 2015-11-06 Density of dislocations in CdHgTe heteroepitaxial structures on GaAs(013) and Si(013) substrates in PHYSICS OF THE SOLID STATE
  • 2014-08-31 Defects in heteroepitaxial CdHgTe/Si layers and their behavior under conditions of implanted p+-n photodiode structure formation in TECHNICAL PHYSICS LETTERS
  • 2014-05 Dislocations in CdTe heteroepitaxial structures on GaAs(301) and Si(301) substrates in OPTOELECTRONICS, INSTRUMENTATION AND DATA PROCESSING
  • 2013-09 High-performance 320 × 256 long-wavelength infrared photodetector arrays based on CdHgTe layers grown by molecular beam epitaxy in OPTOELECTRONICS, INSTRUMENTATION AND DATA PROCESSING
  • 2013-09 HgCdTe structures for dual-band photodetectors operating in the 3–5 and 8–12 µm spectral ranges in OPTOELECTRONICS, INSTRUMENTATION AND DATA PROCESSING
  • 2013-01-13 The photoelectrical properties of MIS structures based on heteroepitaxial n-Hg1–xCdxTe (x = 0.21–0.23) in RUSSIAN PHYSICS JOURNAL
  • 2013-01-12 Analysis of the photoluminescence spectra of CdxHg1–xte heteroepitaxial structures with potential and quantum wells grown by molecularbeam epitaxy in RUSSIAN PHYSICS JOURNAL
  • 2011-10-28 Spontaneous composition modulation during CdxHg1−xTe(301) molecular beam epitaxy in JETP LETTERS
  • 2011-08-13 The electrical characteristics of MBE n-Hg1–xCdxTe (x = 0.29–0.31) MIS structures with sharp inhomogeneities in composition in RUSSIAN PHYSICS JOURNAL
  • 2011-07-08 Defects in the crystal structure of CdxHg1 − xTe layers grown on the Si (310) substrates in SEMICONDUCTORS
  • 2011-07-08 Photoluminescence of Hg1 − xCdxTe based heterostructures grown by molecular-beam epitaxy in SEMICONDUCTORS
  • 2011-03 The influence of hydrogenation on the electrical properties of the CdxHg1 − xTe epitaxial structures in SEMICONDUCTORS
  • 2011-03 HgCdTe heterostructures on Si (310) substrates for midinfrared focal plane arrays in SEMICONDUCTORS
  • 2011-02 Infrared focal plane assemblies based on HgCdTe/Si(310) heterostructure in TECHNICAL PHYSICS LETTERS
  • 2010-12-29 Photoluminescence of CdHgTe based nanoheterostructures in TECHNICAL PHYSICS LETTERS
  • 2010-12-29 Photoluminescence of CdHgTe epilayers grown on silicon substrates in TECHNICAL PHYSICS LETTERS
  • 2010-07-17 Electrophysical characteristics of MIS structures based on graded band-gap MBE HgCdTe with grown in situ CdTe as a dielectric in RUSSIAN PHYSICS JOURNAL
  • 2010-04-14 Growth of HgTe Quantum Wells for IR to THz Detectors in JOURNAL OF ELECTRONIC MATERIALS
  • 2010-02 Surface micromorphology of CdTe(310) layers grown by molecular beam epitaxy in JOURNAL OF SURFACE INVESTIGATION: X-RAY, SYNCHROTRON AND NEUTRON TECHNIQUES
  • 2010-01-26 Monitoring the composition of the Cd1 − zZnzTe heteroepitaxial layers by spectroscopic ellipsometry in SEMICONDUCTORS
  • 2010-01 Concentration of vacancies in the metal sublattice of cadmium and mercury tellurides solid solutions depending on composition in RUSSIAN JOURNAL OF PHYSICAL CHEMISTRY A
  • 2009-08 HgCdTe heterostructures on Si(310) substrates for infrared photodetectors in OPTOELECTRONICS, INSTRUMENTATION AND DATA PROCESSING
  • 2009-01-08 Effect of orientation of the substrate on the conditions of growth of HgTe films by molecular beam epitaxy in INORGANIC MATERIALS
  • 2008-12-17 Electrical properties of n-HgCdTe heteroepitaxial layers modified by ion etching in SEMICONDUCTORS
  • 2008-11-28 Ion-beam-induced modification of the electrical properties of vacancy-doped mercury cadmium telluride in TECHNICAL PHYSICS LETTERS
  • 2008-11 Properties of MIS structures based on graded-gap HgCdTe grown by molecular beam epitaxy in SEMICONDUCTORS
  • 2008-06-15 Surface morphology of a Si(310) substrate used for molecular beam epitaxy of CdHgTe: II. Si(310) surface annealed in As4 vapors in JOURNAL OF SURFACE INVESTIGATION: X-RAY, SYNCHROTRON AND NEUTRON TECHNIQUES
  • 2008-06-13 Effect of the arsenic cracking zone temperature on the efficiency of arsenic incorporation in CdHgTe films in molecular-beam epitaxy in SEMICONDUCTORS
  • 2008-06-13 Dependence of the electrical parameters of MBE-grown CdxHg1 − xTe films on the level of doping with indium in SEMICONDUCTORS
  • 2008-04 Interaction of cadmium vapor with the surface of CdxHg1−xTe layers during molecular beam epitaxial growth on GaAs substrates in INORGANIC MATERIALS
  • 2008-02 Surface morphology of the Si(310) substrate used for molecular beam epitaxy of CdHgTe: I. Clean Si(310) surface in JOURNAL OF SURFACE INVESTIGATION: X-RAY, SYNCHROTRON AND NEUTRON TECHNIQUES
  • 2008-02 Factors determining the morphology of CdxHg1−xTe films in the course of molecular beam epitaxy in JOURNAL OF SURFACE INVESTIGATION: X-RAY, SYNCHROTRON AND NEUTRON TECHNIQUES
  • 2007-08 Growing HgTe/Cd0.735Hg0.265Te quantum wells by molecular beam epitaxy in OPTOELECTRONICS, INSTRUMENTATION AND DATA PROCESSING
  • 2007-08 A focal plane array detector based on a variband isotype P-p junction in MCT layers grown by molecular beam epitaxy in OPTOELECTRONICS, INSTRUMENTATION AND DATA PROCESSING
  • 2007-08 A microwave detector based on an MCT photodiode for subthermonuclear plasma research in OPTOELECTRONICS, INSTRUMENTATION AND DATA PROCESSING
  • 2006-10 Photoelectrical characteristics of MIS structures on the basis of graded-band-gap n-HgCdTe (x = 0.21–0.23) in RUSSIAN PHYSICS JOURNAL
  • 2006-09 The dynamics of accumulation of electrically active radiation defects on implantation of graded-band-gap HgCdTe films grown by MBE in RUSSIAN PHYSICS JOURNAL
  • 2005-09 Observation of antiphase domains in CdxHg1−xTe films on silicon by the phase contrast method in atomic force microscopy in JETP LETTERS
  • 2004-12-31 Photoelectrical Characteristics of MIS Structures on the Basis of Heteroepitaxial HgCdTe in RUSSIAN PHYSICS JOURNAL
  • 2004-10 Effect of low-temperature annealing on electrical properties of n-HgCdTe in SEMICONDUCTORS
  • 2004-10 Magnetic-field dependences of the conductivity and hall factor in MBE-grown CdXHg1−XTe layers in SEMICONDUCTORS
  • 2003-11 Spontaneous formation of the periodic composition-modulated nanostructure in CdxHg1−xTe films in SEMICONDUCTORS
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