Alexander Sergeevitch Gudovskikh


Ontology type: schema:Person     


Person Info

NAME

Alexander Sergeevitch

SURNAME

Gudovskikh

Publications in SciGraph latest 50 shown

  • 2022-02-14 Resonant Hybrid Metal–Dielectric Nanostructures for Local Color Generation in JETP LETTERS
  • 2021-11 Admittance Spectroscopy of Solar Cells Based on Selective Contact MoOx/Si Junction in TECHNICAL PHYSICS LETTERS
  • 2021-10 Formation of Heterostructures of GaP/Si Photoconverters by the Combined Method of MOVPE and PEALD in TECHNICAL PHYSICS LETTERS
  • 2021-04 Influence of the Design Features of a Magnetron Sputtering Deposition System on the Electrical and Optical Properties of Indium—Tin Oxide Films in SEMICONDUCTORS
  • 2021-01 A Selective BP/Si Contact Formed by Low-Temperature Plasma-Enhanced Atomic Layer Deposition in TECHNICAL PHYSICS LETTERS
  • 2020-12 Using MoOx/p-Si Selective Contact for Evaluation of the Degradation of a Near-Surface Region of Silicon in TECHNICAL PHYSICS LETTERS
  • 2019-08-07 Effect of Thermal Annealing on the Photovoltaic Properties of GaP/Si Heterostructures Fabricated by Plasma-Enhanced Atomic Layer Deposition in SEMICONDUCTORS
  • 2018-12-24 Precision Chemical Etching of GaP(NAs) Epitaxial Layers for the Formation of Monolithic Optoelectronic Devices in SEMICONDUCTORS
  • 2018-03-12 Formation of Cu2O and ZnO Crystal Layers by Magnetron Assisted Sputtering and Their Optical Characterization in SEMICONDUCTORS
  • 2018-01 Visualization of Isofrequency Contours of Strongly Localized Waveguide Modes in Planar Dielectric Structures in JETP LETTERS
  • 2017-01 Nanoscale Cu2O films: Radio-frequency magnetron sputtering and structural and optical studies in SEMICONDUCTORS
  • 2017-01 Influence of double- and triple-layer antireflection coatings on the formation of photocurrents in multijunction III–V solar cells in SEMICONDUCTORS
  • 2016-11-06 Numerical simulation of the properties of solar cells based on GaPNAs/Si heterostructures and GaN nanowires in SEMICONDUCTORS
  • 2016-05-15 GaAs/InGaAsN heterostructures for multi-junction solar cells in SEMICONDUCTORS
  • 2015-12 Simulation of characteristics of double-junction solar cells based on ZnSiP2 heterostructures on silicon substrate in TECHNICAL PHYSICS LETTERS
  • 2015-11-04 Study of multiple InAs/GaAs quantum-well structures by electroreflectance spectroscopy in SEMICONDUCTORS
  • 2015-04-16 Admittance spectroscopy of solar cells based on GaPNAs layers in SEMICONDUCTORS
  • 2015-04-16 MBE growth of GaP on a Si substrate in SEMICONDUCTORS
  • 2014-04-17 Study of GaInP solar-cell interfaces by variable-flux spectral measurements in SEMICONDUCTORS
  • 2014-03-07 Design of multijunction GaPNAs/Si heterostructure solar cells by computer simulation in SEMICONDUCTORS
  • 2013-12-28 Photoelectric properties of solar cells based on GaPNAs/GaP heterostructures in TECHNICAL PHYSICS LETTERS
  • 2013-10-16 Interfaces in III–V High Efficiency Solar Cells in HIGH-EFFICIENCY SOLAR CELLS
  • 2013-09-05 Analysis of light-induced degradation mechanisms in α-Si:H/μc-Si:H solar photovoltaics in SEMICONDUCTORS
  • 2013-08-07 Study of the properties of solar cells based on a-Si:H p-i-n structures by admittance spectroscopy in SEMICONDUCTORS
  • 2013-05-09 Study of the light-induced degradation of tandem α-Si:H/μc-Si:H photovoltaic converters in SEMICONDUCTORS
  • 2011-02-16 Characterization of silicon heterojunctions for solar cells in NANOSCALE RESEARCH LETTERS
  • 2010-11-19 Germanium subcells for multijunction GaInP/GaInAs/Ge solar cells in SEMICONDUCTORS
  • 2009-10-10 Properties of interfaces in GaInP solar cells in SEMICONDUCTORS
  • 2008 Characterization of amorphous/crystalline silicon interfaces from electrical measurements in MRS ADVANCES
  • 2005-08 Characterization of an a-Si:H/c-Si interface by admittance spectroscopy in SEMICONDUCTORS
  • 2002-02 Effect of thermal treatment on structure and properties of a-Si:H films obtained by cyclic deposition in SEMICONDUCTORS
  • 2001-03 Electrical and photoelectric properties of a-Si:H layered films: The influence of thermal annealing in SEMICONDUCTORS
  • 2000-04 Structure and properties of a-Si:H films grown by cyclic deposition in SEMICONDUCTORS
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