V I Gaman


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Person Info

NAME

V I

SURNAME

Gaman

Publications in SciGraph latest 50 shown

  • 2018-10 Characteristics of Hydrogen Sensors Based on Thin Tin Dioxide Films Modified with Platinum, Palladium, Silver, and Yttrium in RUSSIAN PHYSICS JOURNAL
  • 2017-11 Characteristics of Hydrogen Sensors Based on Thin Tin Dioxide Films Modified with Gold in RUSSIAN PHYSICS JOURNAL
  • 2017-05 Dependences of Characteristics of Sensors Based on Tin Dioxide on the Hydrogen Concentration and Humidity of Gas Mixture in RUSSIAN PHYSICS JOURNAL
  • 2015-06 Influence of Water Vapors and Hydrogen on the Energy Band Bending in the SnO2 Microcrystals of Polycrystalline Tin Dioxide Films in RUSSIAN PHYSICS JOURNAL
  • 2014-07 Characteristics of the Semiconductor Resistive Carbon Monooxide Sensors in the Thermo-Cyclic Operation Mode in RUSSIAN PHYSICS JOURNAL
  • 2014-04 Characteristics of the Semiconductor Resistive Hydrogen Sensors in the Thermo-Cyclic Operation Mode in RUSSIAN PHYSICS JOURNAL
  • 2012-05 Physical principles of operation of oxidizing gas sensors based on metal oxide semiconductors in RUSSIAN PHYSICS JOURNAL
  • 2012-03 Influence of oxygen adsorption on the surface potential of a metal oxide semiconductor in RUSSIAN PHYSICS JOURNAL
  • 2010-03 Effect of gold on the properties of nitrogen dioxide sensors based on thin WO3 films in SEMICONDUCTORS
  • 2008-08 The effect of water vapor on the electrical properties and sensitivity of thin-film gas sensors based on tin dioxide in RUSSIAN PHYSICS JOURNAL
  • 2008-04 Basic physics of semiconductor hydrogen sensors in RUSSIAN PHYSICS JOURNAL
  • 2008-03 Mechanism of formation of the response of a hydrogen gas sensor based on a silicon MOS diode in SEMICONDUCTORS
  • 2006-06 Electrical and gas-sensitive properties of a resistive thin-film sensor based on tin dioxide in SEMICONDUCTORS
  • 2003-04 Time Dependence of the Capacitance of a MOS Silicon Tunnel Diode under the Influence of Hydrogen in RUSSIAN PHYSICS JOURNAL
  • 2001-11 Influence of Thermal Annealing on the Electrical and Gas-Sensitive Properties of MOS Silicon-Based Tunnel Diodes in RUSSIAN PHYSICS JOURNAL
  • 2001-11 Threshold Frequency of Helical Electron–Hole Plasma Instability in RUSSIAN PHYSICS JOURNAL
  • 2001-01 Threshold Characteristics of Silicon Oscillistors in RUSSIAN PHYSICS JOURNAL
  • 2000-07 Charge transfer mechanism in high-purity silicon-basedn+-π-p+ structures in RUSSIAN PHYSICS JOURNAL
  • 1999-09 Influence of hydrogen on the volt-ampere and volt-farad characteristics of mis silicon tunnel diodes in RUSSIAN PHYSICS JOURNAL
  • 1998-01 Effect of hydrogen on the current-voltage characteristics of tunneling mis diodes based on gallium arsenide in RUSSIAN PHYSICS JOURNAL
  • 1997-04 Effect of laser radiation on the electronic density of states of an 〈insulator gallium arsenide〉 interface in SEMICONDUCTORS
  • 1995-02 Silicon oscillistor as a thermometer with frequency output in RUSSIAN PHYSICS JOURNAL
  • 1992-11 Electrical properties of metal-vanadium-borate glass-gallium arsenide structures in RUSSIAN PHYSICS JOURNAL
  • 1992-07 Energy-independent memory elements based on metal-PbO-semiconductor structures in RUSSIAN PHYSICS JOURNAL
  • 1992-05 Kink instability of the semiconductor plasma in silicon parallelepipeds in RUSSIAN PHYSICS JOURNAL
  • 1991-08 Helical instability of a semiconductor plasma in silicon wafers at 77 K in SOVIET PHYSICS JOURNAL
  • 1991-08 Linear parameters of helical instability in thick silicon wafers at 300 K in SOVIET PHYSICS JOURNAL
  • 1989-01 Switching with memory in metal-(Vanadium-molybdenum glass)-metal structures in SOVIET PHYSICS JOURNAL
  • 1987-06 Electronic processes in oxide glassy semiconductors and thin-film structures based on them in SOVIET PHYSICS JOURNAL
  • 1984-07 Experimental study of the nonlinear properties of the surface-kink instability of a semiconductor plasma in a germanium plate in SOVIET PHYSICS JOURNAL
  • 1984-07 Threshold characteristics of the surface-kink instability of a semiconductor plasma in a germanium plate in SOVIET PHYSICS JOURNAL
  • 1983-10 Current-voltage characteristics of diode structures based on gallium arsenide doped by manganese or iron in SOVIET PHYSICS JOURNAL
  • 1983-06 Properties of Bi2O3-V2O5-CaO glasses in SOVIET PHYSICS JOURNAL
  • 1982-07 Generating properties of Al-Tb2GeS5-Ge MIS structures in SOVIET PHYSICS JOURNAL
  • 1982-07 A germanium oscillator in a pulsed magnetic field in SOVIET PHYSICS JOURNAL
  • 1982-05 DC electrical conductivity of vanadium-borate glass in weak and strong electric fields in SOVIET PHYSICS JOURNAL
  • 1982-05 Ac dielectric losses and electrical conductivity of vanadium-borate glass in SOVIET PHYSICS JOURNAL
  • 1981-05 Experimental investigation of the nonlinear properties of the surface helical instability in germanium in SOVIET PHYSICS JOURNAL
  • 1981-03 Electrical properties (dc and ac) of vanadium-borate glass in SOVIET PHYSICS JOURNAL
  • 1981-03 Electrical properties of mim structures based on vanadium-borate glass in SOVIET PHYSICS JOURNAL
  • 1981-01 Charge transport mechanism in metal-Tb2GeS5-Ge structure in SOVIET PHYSICS JOURNAL
  • 1980-09 Dielectric properties of thin films of chalcogenide glasses in SOVIET PHYSICS JOURNAL
  • 1979-08 Effects of a strong electrical field in thin-film metal-chalcogenide glass-metal structures in SOVIET PHYSICS JOURNAL
  • 1978-11 Dielectric properties of thin films of vanadium-phosphate glass in SOVIET PHYSICS JOURNAL
  • 1978-08 Vanadate-phosphate glass thin-film memory elements in SOVIET PHYSICS JOURNAL
  • 1978-02 Effect of temperature conditions on electrical characteristics of thin-film metal-vanadium-phosphate glass-metal structures in SOVIET PHYSICS JOURNAL
  • 1977-02 Thermostimulated current of dielectric relaxation in metal-vanadium phosphate glass-metal systems in SOVIET PHYSICS JOURNAL
  • 1976-02 Current transfer mechanism in metal-dielectric-metal systems based on vanadium-phosphorus glasses in SOVIET PHYSICS JOURNAL
  • 1976-02 Optical absorption in films of V2O5 and vanadium-phosphorus glasses in SOVIET PHYSICS JOURNAL
  • 1975-03 Mechanism of the degradation of electronic switches built on chalcogenic glasses in SOVIET PHYSICS JOURNAL
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