Ilya P Soshnikov


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Person Info

NAME

Ilya P

SURNAME

Soshnikov

Publications in SciGraph latest 50 shown

  • 2020-06-03 MBE-Grown InxGa1 –xAs Nanowires with 50% Composition in SEMICONDUCTORS
  • 2020-01-03 Synthesis and characterization of PVP/PbI2 nanocomposites in ADVANCED COMPOSITES AND HYBRID MATERIALS
  • 2019-12-04 Ga(In)AsP Lateral Nanostructures as the Optical Component of GaAs-Based Photovoltaic Converters in SEMICONDUCTORS
  • 2019-12 Photoactive ZnO–Al2O3 Transparent Coatings and Nanocomposites Prepared by a Simple Polymer-Salt Synthesis in SEMICONDUCTORS
  • 2019-08 The Influence of EL2 Centers on the Photoelectric Response of an Array of Radial GaAs/AlGaAs Nanowires in TECHNICAL PHYSICS LETTERS
  • 2019-03 Studying Evolution of the Ensemble of Micropores in a SiC/Si Structure during Its Growth by the Method of Atom Substitution in PHYSICS OF THE SOLID STATE
  • 2018-12 InGaN/GaN QDs Nanorods: Processing and Properties in SEMICONDUCTORS
  • 2018-11-07 Solar Cell Based on Core/Shell Nanowires in SEMICONDUCTORS
  • 2018-11 The Influence of Polyvinylpyrrolidone Molecular Weight on the Structure and the Spectral and Nonlinear Optical Properties of Composite Materials with CdS/ZnS Nanoparticles in OPTICS AND SPECTROSCOPY
  • 2018-10-18 MBE Growth and Structural Properties of GaP and InP Nanowires on a SiC Substrate with a Graphene Layer in SEMICONDUCTORS
  • 2018-10-18 Phosphorus-Based Nanowires Grown by Molecular-Beam Epitaxy on Silicon in SEMICONDUCTORS
  • 2018-09-06 Nanostructure Growth in the Ga(In)AsP–GaAs System under Quasi-Equilibrium Conditions in SEMICONDUCTORS
  • 2018-04-17 MBE growth and Structural Properties of InAs and InGaAs Nanowires with Different Mole Fraction of In on Si and Strongly Mismatched SiC/Si(111) Substrates in SEMICONDUCTORS
  • 2018-04-17 GaAs Wurtzite Nanowires for Hybrid Piezoelectric Solar Cells in SEMICONDUCTORS
  • 2018-04-17 The Features of GaAs Nanowire SEM Images in SEMICONDUCTORS
  • 2018-02-05 Oxygen Nitrogen Mixture Effect on Aluminum Nitride Synthesis by Reactive Ion Plasma Deposition in SEMICONDUCTORS
  • 2018-02 Coherent Growth of InP/InAsP/InP Nanowires on a Si (111) Surface by Molecular-Beam Epitaxy in TECHNICAL PHYSICS LETTERS
  • 2017-11-03 MBE growth of ultrathin III–V nanowires on a highly mismatched SiC/Si(111) substrate in SEMICONDUCTORS
  • 2016-12-17 Fabrication of the structures with autocatalytic CdTe nanowires using magnetron sputtering deposition in PHYSICS OF THE SOLID STATE
  • 2016-12 Surface passivation of GaAs nanowires by the atomic layer deposition of AlN in SEMICONDUCTORS
  • 2016-11-06 Hybrid AlGaAs/GaAs/AlGaAs nanowires with a quantum dot grown by molecular beam epitaxy on silicon in SEMICONDUCTORS
  • 2016-10-19 Growth and optical properties of filamentary GaN nanocrystals grown on a hybrid SiC/Si(111) substrate by molecular beam epitaxy in PHYSICS OF THE SOLID STATE
  • 2016-05 The formation of ZnO-based coatings from solutions containing high-molecular polyvinylpyrrolidone in TECHNICAL PHYSICS LETTERS
  • 2013-04-17 Growth specifics of GaAs nanowires in mesa in PHYSICS OF THE SOLID STATE
  • 2011-08-18 Piezoelectric effect in GaAs nanowires in SEMICONDUCTORS
  • 2011-06-18 Fabrication of ordered GaAs nanowhiskers using electron-beam lithography in SEMICONDUCTORS
  • 2009-07-11 Properties of GaAsN nanowires grown by magnetron-sputtering deposition in SEMICONDUCTORS
  • 2007-08 Electron diffraction on GaAs nanowhiskers grown on Si(100) and Si(111) substrates by molecular-beam epitaxy in PHYSICS OF THE SOLID STATE
  • 2007-07 Effect of deposition conditions on nanowhisker morphology in SEMICONDUCTORS
  • 2005-12 Atomic structure of MBE-grown GaAs nanowhiskers in PHYSICS OF THE SOLID STATE
  • 2005-01 Special features of structural interaction in (AlGaIn)N/GaN heterostructures used as dislocation filters in SEMICONDUCTORS
  • 2004-03 Structural and optical properties of heterostructures with InAs quantum dots in an InGaAsN quantum well grown by molecular-beam epitaxy in SEMICONDUCTORS
  • 2003-11 Optical properties of MBE-grown ultrathin GaAsN insertions in GaAs matrix in SEMICONDUCTORS
  • 2002-11 High efficiency (ηD>80%) long wavelength (λ>1.25 μm) quantum dot diode lasers on GaAs substrates in SEMICONDUCTORS
  • 2002-08 Structure of heterointerfaces and photoluminescence properties of GaAs/AlAs superlattices grown on (311)A and (311)B surfaces: Comparative analysis in SEMICONDUCTORS
  • 2002-02 Photoluminescence and the structure of heterointerfaces of (311)A-and (311)B-oriented GaAs/AlAs superlattices in JETP LETTERS
  • 2001-07 The formation of developed morphology on the indium phosphide surface by ion argon beam sputtering in TECHNICAL PHYSICS
  • 2001-03 Composition analysis of coherent nanoinsertions of solid solutions on the basis of high-resolution electron micrographs in SEMICONDUCTORS
  • 2000-09 Sputtering of A3B5 materials (GaP, GaAs, GaSb, InP, and InSb) by 2-to 14-keV N2+ ions in TECHNICAL PHYSICS
  • 2000-06 Sputtering characteristics of fullerene C60 films under bombardment with 0.1–1-keV argon ions and atoms in TECHNICAL PHYSICS
  • 2000-06 Specifics of MOCVD formation of InxGa1−xN inclusions in a GaN matrix in SEMICONDUCTORS
  • 1998-03 Long-range structural interaction effect in gallium arsenide during ion bombardment in PHYSICS OF THE SOLID STATE
  • 1997-06 Sputtering of AlxGa1−xAs semiconductor targets by Ar+ ions with energies of 2–14 keV in TECHNICAL PHYSICS
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