Zh I Alferov


Ontology type: schema:Person     


Person Info

NAME

Zh I

SURNAME

Alferov

Publications in SciGraph latest 50 shown

  • 2017-04-21 Energy spectrum and thermal properties of a terahertz quantum-cascade laser based on the resonant-phonon depopulation scheme in SEMICONDUCTORS
  • 2017-04 Terahertz radiation generation in multilayer quantum-cascade heterostructures in TECHNICAL PHYSICS LETTERS
  • 2016-10-11 Fabrication of a terahertz quantum-cascade laser with a double metal waveguide based on multilayer GaAs/AlGaAs heterostructures in SEMICONDUCTORS
  • 2016-05-15 Multilayer heterostructures for quantum-cascade lasers operating in the terahertz frequency range in SEMICONDUCTORS
  • 2015-12 Simulation of characteristics of double-junction solar cells based on ZnSiP2 heterostructures on silicon substrate in TECHNICAL PHYSICS LETTERS
  • 2012-07 The Academy of sciences’ role in ensuring the protection and concealment of Russian Naval Ships in HERALD OF THE RUSSIAN ACADEMY OF SCIENCES
  • 2011-06-30 Semiconductor lasers and nanotechnologies in HERALD OF THE RUSSIAN ACADEMY OF SCIENCES
  • 2009-04 Nanotechnologies in microelectronics and power generation in HERALD OF THE RUSSIAN ACADEMY OF SCIENCES
  • 2009-01-01 III-V Solar Cells and Concentrator Arrays in HIGH-EFFICIENT LOW-COST PHOTOVOLTAICS
  • 2007-05 Injection lasers with a broad emission spectrum on the basis of self-assembled quantum dots in SEMICONDUCTORS
  • 2006-06 An X-ray diffraction and electron-microscopic study of the influence of gamma radiation on multilayer AlGaAs/InGaAs/GaAs heterostructures in SEMICONDUCTORS
  • 2004-12 Ultralow internal optical loss in separate-confinement quantum-well laser heterostructures in SEMICONDUCTORS
  • 2004-11 MOCVD-grown AlGaN/GaN heterostructures with high electron mobility in SEMICONDUCTORS
  • 2004-08 Solar photovoltaics: Trends and prospects in SEMICONDUCTORS
  • 2004-06 High-power 1.5 µm InAs-InGaAs quantum dot lasers on GaAs substrates in SEMICONDUCTORS
  • 2003-12 Lasing at 1.5 µm in quantum dot structures on GaAs substrates in SEMICONDUCTORS
  • 2003-10 Temperature characteristics of low-threshold high-efficiency quantum-dot lasers with the emission wavelength from 1.25 to 1.29 µm in SEMICONDUCTORS
  • 2003-09 Metamorphic lasers for 1.3-µm spectral range grown on GaAs substrates by MBE in SEMICONDUCTORS
  • 2003-08 Synchrotron investigations of an electron energy spectrum in III–V-based nanostructures in SEMICONDUCTORS
  • 2003-07 Control over the parameters of InAs-GaAs quantum dot arrays in the Stranski-Krastanow growth mode in SEMICONDUCTORS
  • 2003-06 Mid-infrared (λ=2.775 µm) injection laser based on AlGaAsSb/InAs/CdMgSe hybrid double heterostructure grown by molecular-beam epitaxy in SEMICONDUCTORS
  • 2003 1.5 micron InAs quantum dot lasers based on metamorphic InGaAs/GaAs heterostructures. in MRS ADVANCES
  • 2003 1.5 micron InAs quantum dot lasers based on metamorphic InGaAs/GaAsheterostructures. in MRS ADVANCES
  • 2003-01 Long-term stability of long-wavelength (>1.25 µm) quantum-dot lasers fabricated on GaAs substrates in TECHNICAL PHYSICS
  • 2002-11 Long-wavelength quantum-dot lasers in JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS
  • 2002-11 High efficiency (ηD>80%) long wavelength (λ>1.25 μm) quantum dot diode lasers on GaAs substrates in SEMICONDUCTORS
  • 2002-09 The influence of heat treatment conditions on the evaporation of defect regions in structures with InGaAs quantum dots in the GaAs matrix in SEMICONDUCTORS
  • 2001-11 In memory of Aleksei Petrovich Shotov (1927–2001) in SEMICONDUCTORS
  • 2001-07 1.3 µm vertical microcavities with InAs/InGaAs quantum dots and devices based on them in SEMICONDUCTORS
  • 2001-07 Comparative analysis of long-wavelength (1.3 µm) VCSELs on GaAs substrates in SEMICONDUCTORS
  • 2001-05 Interface structure and growth mode of quantum wire and quantum dot GaAs-AlAs structures on corrugated (311)A surfaces in JOURNAL OF ELECTRONIC MATERIALS
  • 2001-03 InAs/Si-Based Quantum-Dot Heterostructures for New-Generation Optoelectronic and Microelectronic Devices in RUSSIAN MICROELECTRONICS
  • 2001 Reversibility of the Island Shape, Volume and Density in Stranski-Krastanow Growth in PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS PART I
  • 2001 Formation of GaAsN nanoinsertions in a GaN matrix in PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS PART I
  • 2000-11 The power density giving rise to optical degradation of mirrors in InGaAs/AlGaAs/GaAs-based laser diodes in SEMICONDUCTORS
  • 2000-07 Study of multilayer structures with InAs nanoobjects in a silicon matrix in SEMICONDUCTORS
  • 2000-07 Properties of wide-mesastripe InGaAsP/InP lasers in SEMICONDUCTORS
  • 2000-05 Power conversion efficiency of quantum dot laser diodes in SEMICONDUCTORS
  • 2000-05 InGaAs-GaAs quantum dots for application in long wavelength (1.3 µm) resonant vertical cavity enhanced devices in JOURNAL OF ELECTRONIC MATERIALS
  • 2000-05 Stacked InAs/InGaAs quantum dot heterostructures for optical sources emitting in the 1.3 µm wavelength range in SEMICONDUCTORS
  • 2000-05 Electromagnetic response of 3D arrays of quantum dots in JOURNAL OF ELECTRONIC MATERIALS
  • 2000-05 GaAs-based 1.3 µm InGaAs quantum dot lasers: A status report in JOURNAL OF ELECTRONIC MATERIALS
  • 2000-04 Lasing in the vertical direction in InGaN/GaN/AlGaN structures with InGaN quantum dots in SEMICONDUCTORS
  • 2000-04 Aleksandr Aleksandrovich Rogachev in SEMICONDUCTORS
  • 2000-03 Mechanisms of InGaAlAs solid solution decomposition stimulated by InAs quantum dots in SEMICONDUCTORS
  • 2000-01 A spatially single-mode laser for a range of 1.25–1.28 μm on the basis of InAs quantum dots on a GaAs substrate in SEMICONDUCTORS
  • 2000 Structure and Optical Properties of Si/InAs/Si Layers Grown by MBE on Si Substrate at Different Temperatures in MRS ADVANCES
  • 2000 Quantum dots for GaAs-based surface emitting lasers at 1300 nm in ADVANCES IN SOLID STATE PHYSICS 40
  • 1999-11 Effect of growth conditions on InAs nanoislands formation on Si(100) surface in CZECHOSLOVAK JOURNAL OF PHYSICS
  • 1999-09 Gain characteristics of quantum-dot injection lasers in SEMICONDUCTORS
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