P S Kop’Ev


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Person Info

NAME

P S

SURNAME

Kop’Ev

Publications in SciGraph latest 50 shown

  • 2016-11 Resonance energy transfer in a dense array of II–VI quantum dots in PHYSICS OF THE SOLID STATE
  • 2015-03 Molecular-beam epitaxy of heterostructures of wide-gap II–VI compounds for low-threshold lasers with optical and electron pumping in SEMICONDUCTORS
  • 2015-02 Plasmon-induced enhancement of yellow-red luminescence in InGaN/Au nanocomposites in SEMICONDUCTORS
  • 2014-03 Peculiarities of the electrophysical properties of InSb/AlInSb/AlSb heterostructures with a high electron concentration in the two-dimensional channel in SEMICONDUCTORS
  • 2013-12 Photonic crystals and Bragg gratings for the mid-IR and terahertz spectral ranges in SEMICONDUCTORS
  • 2012-05 RHEED monitoring of elastic stresses during MBE growth of group III nitride heterostructures in TECHNICAL PHYSICS LETTERS
  • 2011-10 Features of molecular-beam epitaxy and structural properties of AlInSb-based heterostructures in SEMICONDUCTORS
  • 2011-08 Influence of nonlinear effects on destruction of active elements of electron-beam-pumped lasers Based on ZnSe-containing quantum-size structures in OPTICS AND SPECTROSCOPY
  • 2011-02 Excitons in single and double GaAs/AlGaAs/ZnSe/Zn(Cd)MnSe heterovalent quantum wells in SEMICONDUCTORS
  • 2009-05 Quantum dot semiconductor lasers of the 1.3 μm wavelength range with high temperature stability of the lasing wavelength (0.2 nm/K) in SEMICONDUCTORS
  • 2008-12 An efficient electron-beam-pumped semiconductor laser for the green spectral range based on II–VI multilayer nanostructures in SEMICONDUCTORS
  • 2008-12 AlGaN-based quantum-well heterostructures for deep ultraviolet light-emitting diodes grown by submonolayer discrete plasma-assisted molecular-beam epitaxy in SEMICONDUCTORS
  • 2008-07 Electric-field control of the occupancy of the upper laser subband in quantum-well structures with asymmetric barriers designed for unipolar laser operation in SEMICONDUCTORS
  • 2007-12 Green lasers based on CdSe/ZnSe nanostructures pumped by electron beams with energies below 10 keV in TECHNICAL PHYSICS LETTERS
  • 2007-01 InSb/InAsSb nanostructures for Mid-IR optoelectronics in BULLETIN OF THE RUSSIAN ACADEMY OF SCIENCES: PHYSICS
  • 2004-09 Lasing in Cd(Zn)Se/ZnMgSSe heterostructures pumped by nitrogen and InGaN/GaN lasers in SEMICONDUCTORS
  • 2004-06 Effect of the spin-orbit interaction on the cyclotron resonance of two-dimensional electrons in JETP LETTERS
  • 2004-04 Peculiarities of electron spectrum rearrangement for the double-well heterostructure GaAs/AlGaAs with a variable dimensionality of electronic states in an external electric field in JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS
  • 2003-11 Excitonic recombination near the mobility edge in CdSe/ZnSe nanostructures in SEMICONDUCTORS
  • 2003-06 Mid-infrared (λ=2.775 µm) injection laser based on AlGaAsSb/InAs/CdMgSe hybrid double heterostructure grown by molecular-beam epitaxy in SEMICONDUCTORS
  • 2003-04 Exciton Spin Manipulation in ZnMnSe-Based Structures in JOURNAL OF SUPERCONDUCTIVITY
  • 2003-01 Electroluminescence of injection lasers based on vertically coupled quantum dots near the lasing threshold in SEMICONDUCTORS
  • 2002-12 Isotope-pure silicon layers grown by MBE in SEMICONDUCTORS
  • 2002-12 MBE growth and photoluminescent properties of InAsSb/AlSbAs quantum wells in SEMICONDUCTORS
  • 2002-08 Cyclotron resonance in the InAs/GaSb heterostructure in an inclined magnetic field in JETP LETTERS
  • 2002-04 Far infrared electroluminescence in cascade type-II heterostructures in JETP LETTERS
  • 2002-01 Sulfide passivating coatings on GaAs(100) surface under conditions of MBE growth of 〈II–VI〉/GaAs in SEMICONDUCTORS
  • 2001-05 BeCdSe: A new material for the active region in devices operating in the blue-green region of the spectrum in SEMICONDUCTORS
  • 2001-04 Structural, luminescent, and transport properties of hybrid AlAsSb/InAs/Cd(Mg)Se heterostructures grown by molecular beam epitaxy in SEMICONDUCTORS
  • 2000-05 Power conversion efficiency of quantum dot laser diodes in SEMICONDUCTORS
  • 2000-05 Stacked InAs/InGaAs quantum dot heterostructures for optical sources emitting in the 1.3 µm wavelength range in SEMICONDUCTORS
  • 2000-03 Treatment of inhomogeneous radiation broadening in quantum dot heterostructures described within the framework of the superradiation model in TECHNICAL PHYSICS LETTERS
  • 2000-03 Mechanisms of InGaAlAs solid solution decomposition stimulated by InAs quantum dots in SEMICONDUCTORS
  • 1999-09 Gain characteristics of quantum-dot injection lasers in SEMICONDUCTORS
  • 1999-09 Heteroepitaxial growth of InAs on Si: A new type of quantum dot in SEMICONDUCTORS
  • 1999-09 Blue-green ZnSe lasers with a new type of active region in SEMICONDUCTORS
  • 1999-08 Long-wavelength emission in structures with quantum dots formed in the stimulated decomposition of a solid solution at strained islands in SEMICONDUCTORS
  • 1999-08 Formation of two-dimensional islands in the deposition of ultrathin InSb layers on a GaSb surface in SEMICONDUCTORS
  • 1999-07 Collective resonances and shape function for homogeneous broadening of the emission spectra of quantum-well semiconductor heterostructures in SEMICONDUCTORS
  • 1999-05 Lasing in structures with InAs quantum dots in an (Al, Ga)As matrix grown by submonolayer deposition in JOURNAL OF ELECTRONIC MATERIALS
  • 1999-05 InGaAs/GaAs structures with quantum dots in vertical optical cavities for wavelengths near 1.3 µm in SEMICONDUCTORS
  • 1999-04 Exciton waveguide and lasing in structures with superfine GaAs quantum wells and InAs submonolayer inclusions in an AlGaAs host in SEMICONDUCTORS
  • 1999-02 Photo-and electroluminescence in the 1.3-µm wavelength range from quantum-dot structures grown on GaAs substrates in SEMICONDUCTORS
  • 1999-02 Gain in injection lasers based on self-organized quantum dots in SEMICONDUCTORS
  • 1999-02 Influence of growth conditions on the formation and luminescence properties of InGaAs quantum dots in a Si matrix in SEMICONDUCTORS
  • 1999-01 Influence of composition and anneal conditions on the optical properties of (In, Ga)As quantum dots in an (Al, Ga)As matrix in SEMICONDUCTORS
  • 1999-01 Growth of cubic GaN by molecular-beam epitaxy on porous GaAs substrates in TECHNICAL PHYSICS LETTERS
  • 1998-12 GaAsN/GaAs and InGaAsN/GaAs heterostructures grown by molecular beam epitaxy in TECHNICAL PHYSICS LETTERS
  • 1998-10 Capacitance-voltage profiling of Au/n-GaAs Schottky barrier structures containing a layer of self-organized InAs quantum dots in SEMICONDUCTORS
  • 1998-09 Effect of the quantum-dot surface density in the active region on injection-laser characteristics in SEMICONDUCTORS
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