Andrei F Tsatsulnikov

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Andrei F



Publications in SciGraph latest 50 shown

  • 2020-12-04 Calculation of the Ga+ FIB Ion Dose Distribution by SEM Image in SEMICONDUCTORS
  • 2020-12 The Influence of Reactor Pressure on the Properties of GaN Layers Grown by MOVPE in TECHNICAL PHYSICS LETTERS
  • 2019-12-23 Luminescence Line Broadening Caused by Alloy Disorder in InGaN Quantum Wells in SEMICONDUCTORS
  • 2019-12 Etching of Disc and Ring Patterns in Si3N4/GaN Structure by Ga+ FIB in SEMICONDUCTORS
  • 2019-12 Selective Epitaxy of Submicron GaN Structures in SEMICONDUCTORS
  • 2019-12 GaN Selective Epitaxy in Sub-Micron Windows with Different Depths Formed by Ion Beam Nanolithography in PHYSICS OF THE SOLID STATE
  • 2019-12 Effect of Annealing on Luminescence of InGaN/GaN Structures Etched by a Focused Ion Beam in SEMICONDUCTORS
  • 2019-07 Insulating GaN Epilayers Co-Doped with Iron and Carbon in TECHNICAL PHYSICS LETTERS
  • 2018-12-27 Ultrathin Barrier InAlN/GaN Heterostructures for HEMTs in SEMICONDUCTORS
  • 2018-09-06 Selective Epitaxial Growth of III–N Structures Using Ion-Beam Nanolithography in SEMICONDUCTORS
  • 2017-01 InGaN/GaN light-emitting diode microwires of submillimeter length in SEMICONDUCTORS
  • 2016-11-06 Optical spectroscopy of a resonant Bragg structure with InGaN/GaN quantum wells in SEMICONDUCTORS
  • 2016-10-11 effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis in SEMICONDUCTORS
  • 2016-09-16 Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs in SEMICONDUCTORS
  • 2016-05 Semi-insulating GaN:C epilayers grown by metalorganic vapor phase epitaxy using propane as a carbon source in TECHNICAL PHYSICS LETTERS
  • 2016-04 The influence of growth conditions on the surface morphology and development of mechanical stresses in Al(Ga)N layers during metalorganic vapor phase epitaxy in TECHNICAL PHYSICS LETTERS
  • 2016-02-19 Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation in SEMICONDUCTORS
  • 2015-11-04 Effect of the design of the active region of monolithic multi-color LED heterostructures on their spectra and emission efficiency in SEMICONDUCTORS
  • 2015-10 The influence of aluminum content on the surface morphology of heavily doped (Al)GaN mesastrip structures grown by selective metalorganic vapor phase epitaxy in TECHNICAL PHYSICS LETTERS
  • 2015-08-02 Capacitance-voltage characteristics of (Al/Ti)/Al2O3/n-GaN MIS structures in SEMICONDUCTORS
  • 2015-03 MOVPE of III-N LED structures with short technological process in TECHNICAL PHYSICS LETTERS
  • 2015-01-08 Optical lattices of excitons in InGaN/GaN quantum well systems in SEMICONDUCTORS
  • 2014-05 Properties of InGaN/GaN heterostructures obtained using growth interruption under various conditions in TECHNICAL PHYSICS LETTERS
  • 2014-01-05 Dependence of the efficiency of III-N blue LEDs on the structural perfection of GaN epitaxial buffer layers in SEMICONDUCTORS
  • 2013-03-08 Influence of the carrier Gas, trimethylgallium flow, and growth time on the character of the selective epitaxy of GaN in SEMICONDUCTORS
  • 2013-01-07 Electron scattering in AlGaN/GaN heterostructures with a two-dimensional electron gas in SEMICONDUCTORS
  • 2012-10-10 InGaN/GaN heterostructures grown by submonolayer deposition in SEMICONDUCTORS
  • 2012-10-10 Composite InGaN/GaN/InAlN heterostructures emitting in the yellow-red spectral region in SEMICONDUCTORS
  • 2012-05 Monolithic white LEDs: Approaches, technology, design in JOURNAL OF SURFACE INVESTIGATION: X-RAY, SYNCHROTRON AND NEUTRON TECHNIQUES
  • 2012-03 Group-III-nitride-based light-emitting diode on silicon substrate with epitaxial nanolayer of silicon carbide in TECHNICAL PHYSICS LETTERS
  • 2012-03 Double-cross epitaxial overgrowth of nonpolar gallium nitride layers in TECHNICAL PHYSICS LETTERS
  • 2011-08-27 Specific features of gallium nitride selective epitaxy in round windows in TECHNICAL PHYSICS LETTERS
  • 2011-02-20 Influence of hydrogen on local phase separation in InGaN thin layers and properties of light-emitting structures based on them in SEMICONDUCTORS
  • 2010-12-30 Study of tunneling transport of carriers in structures with an InGaN/GaN active region in SEMICONDUCTORS
  • 2010-12-29 High growth rate of AlN in a planetary MOVPE reactor in TECHNICAL PHYSICS LETTERS
  • 2010-07-22 The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes in SEMICONDUCTORS
  • 2010-06-27 A monolithic white LED with an active region based on InGaN QWs separated by short-period InGaN/GaN superlattices in SEMICONDUCTORS
  • 2010-01-26 Effect of pressure in the growth reactor on the properties of the active region in the InGaN/GaN light-emitting diodes in SEMICONDUCTORS
  • 2010-01-26 Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes in SEMICONDUCTORS
  • 2009-11-18 Indium-rich island structures formed by in-situ nanomasking technology in TECHNICAL PHYSICS LETTERS
  • 2009-07-11 Effect of carrier gas and doping profile on the surface morphology of MOVPE grown heavily doped GaN:Mg layers in SEMICONDUCTORS
  • 2009-06-09 Effect of strain relaxation on active-region formation in InGaN/(Al)GaN heterostructures for green LEDs in SEMICONDUCTORS
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