Anton V Chernyaev


Ontology type: schema:Person     


Person Info

NAME

Anton V

SURNAME

Chernyaev

Publications in SciGraph latest 50 shown

  • 2020-02 Experimental Study and Simulation of the Spectral Characteristics of LED Heterostructures with an InAs Active Region in TECHNICAL PHYSICS LETTERS
  • 2018-10-09 Electrical and Magnetic Properties of Pb and In Nanofilaments in Asbestos near the Superconducting Transition in PHYSICS OF THE SOLID STATE
  • 2017-12 Exponential Increase in the Resistivity upon Cooling and Superconductivity in Indium-Doped Pb0.45Sn0.55Te in JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS
  • 2017-08-25 Superconducting properties of (Pb0.05Sn0.95)Te doped with indium under conditions of hydrostatic compression in SEMICONDUCTORS
  • 2017-02-10 Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2–300 K in SEMICONDUCTORS
  • 2016-03 Size effects in electrical and magnetic properties of quasi-one-dimensional tin wires in asbestos in PHYSICS OF THE SOLID STATE
  • 2012-09 Low-temperature properties of porous silicon-indium nanocomposite in TECHNICAL PHYSICS LETTERS
  • 2010-12-29 Features of the current-voltage characteristics and temperature dependences of electric conductivity in porous silicon layers in TECHNICAL PHYSICS LETTERS
  • 2010-09-16 Effect of hydrostatic compression on the indium-impurity-induced superconducting transition in Pb0.3Sn0.7Te in PHYSICS OF THE SOLID STATE
  • 2010-09-16 Low-temperature electrical conductivity and the superconductor-insulator transition induced by indium impurity states in (Pb0.5Sn0.5)1 − xInxTe solid solutions in PHYSICS OF THE SOLID STATE
  • 2010-08 Quantum corrections to resistance of microblock tellurium at ultralow temperatures under phonon freezing conditions in JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS
  • 2009-03-11 Transverse Nernst-Ettingshausen effect, resonant scattering, and superconductivity in SnTe: In in PHYSICS OF THE SOLID STATE
  • 2009-03-11 Metal-insulator transition in n-3C-SiC epitaxial films in SEMICONDUCTORS
  • 2007-12 Galvanomagnetic properties of 3C-SiC epilayers grown on hexagonal SiC substrates in TECHNICAL PHYSICS LETTERS
  • 2007-10-11 Negative magnetoresistance in SiC heteropolytype junctions in JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS
  • 2006-09 Superconductor-insulator transition in (PbzSn1−z)0.84In0.16Te in JETP LETTERS
  • 2005-11 Electrical conductivity and superconductivity of ordered indium-opal nanocomposites in PHYSICS OF THE SOLID STATE
  • 2004-07 Transition from strong to weak localization in the split-off impurity band in two-dimensional p-GaAs/AlGaAs structures in JETP LETTERS
  • 2003-12 Properties of GaSb-based light-emitting diodes with chemically cut substrates in SEMICONDUCTORS
  • 2003-04 Current and temperature tuning of quantum-well lasers operating in 2.0-to 2.4-µm range in SEMICONDUCTORS
  • 2002-09 Manifestation of coulomb gap in two-dimensional p-GaAs-AlGaAs structures with filled upper Hubbard band in JETP LETTERS
  • 2001-08 Low-temperature hopping conduction over the upper Hubbard band in p-GaAs/AlGaAs multilayered structures in JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS
  • 2000-07 Hysteresis of magnetoresistance in neutron-transmutation-doped Ge in the region of hopping transport over the Coulomb-gap states in SEMICONDUCTORS
  • 1999-04 X-ray microanalysis of quaternary semiconductor solid solutions and its application to the (SnTe-SnSe):In system in PHYSICS OF THE SOLID STATE
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