M A Putyato


Ontology type: schema:Person     


Person Info

NAME

M A

SURNAME

Putyato

Publications in SciGraph latest 50 shown

  • 2018-07 X-Ray Diffraction Analysis of Epitaxial Layers with the Properties of a Dislocation Filter in TECHNICAL PHYSICS LETTERS
  • 2017-09 Formation of low-dimensional structures in the InSb/AlAs heterosystem in SEMICONDUCTORS
  • 2017-04 Interlayer current near the edge of an InAs/GaSb double quantum well in proximity with a superconductor in JETP LETTERS
  • 2017-02 The structural state of epitaxial GaP films of different polarities grown on misoriented Si(001) substrates in TECHNICAL PHYSICS LETTERS
  • 2017-01 Cyclotron resonance of dirac fermions in InAs/GaSb/InAs quantum wells in SEMICONDUCTORS
  • 2016-12 Bragg resonance in a system of AsSb plasmonic nanoinclusions in AlGaAs in SEMICONDUCTORS
  • 2016-11 Effect of a low-temperature-grown GaAs layer on InAs quantum-dot photoluminescence in SEMICONDUCTORS
  • 2016-07 Specular Andreev reflection at the edge of an InAs/GaSb double quantum well with band inversion in JETP LETTERS
  • 2016-01 Formation and crystal structure of GaSb/GaP quantum dots in BULLETIN OF THE RUSSIAN ACADEMY OF SCIENCES: PHYSICS
  • 2015-12 Spatially correlated two-dimensional arrays of semiconductor and metal quantum dots in GaAs-based heterostructures in SEMICONDUCTORS
  • 2015-12 Plasmon resonance in new AsSb–AlGaAs metal–semiconductor metamaterials in SEMICONDUCTORS
  • 2015-02 Molecular beam epitaxy of III-PxAs1 − x solid solutions: Mechanism of composition formation in the sublattice of a group V element in SEMICONDUCTORS
  • 2014-11 Effect of local structural defects on the precipitation of as in the vicinity of InAs quantum dots in a GaAs matrix in SEMICONDUCTORS
  • 2014-10 Fröhlich resonance in the AsSb/AlGaAs system in PHYSICS OF THE SOLID STATE
  • 2014-07 InGaAs/GaAs Quantum Wells Grown by MBE on Artificial GaAs/Si(001) Substrates in RUSSIAN PHYSICS JOURNAL
  • 2014-05 Heteroepitaxy of AIIIBV films on vicinal Si(001) substrates in OPTOELECTRONICS, INSTRUMENTATION AND DATA PROCESSING
  • 2014-03 Coexistence of type-I and type-II band alignment in Ga(Sb, P)/GaP heterostructures with pseudomorphic self-assembled quantum dots in JETP LETTERS
  • 2013-09 Electron microscopy of GaAs-based structures with InAs and As quantum dots separated by an AlAs barrier in SEMICONDUCTORS
  • 2013-08 Optical reflection from the Bragg lattice of AsSb metal nanoinclusions in an AlGaAs matrix in SEMICONDUCTORS
  • 2013-06 Surface morphology and crystallographic properties of GaAs films grown by the MBE process on vicinal Si(001) substrates in RUSSIAN PHYSICS JOURNAL
  • 2013-03 Dependence of plastic relaxation in GaAs films on nucleation of the first as monolayer on Si(001) substrates in BULLETIN OF THE RUSSIAN ACADEMY OF SCIENCES: PHYSICS
  • 2012-12 New system of self-assembled GaSb/GaP quantum dots in SEMICONDUCTORS
  • 2012-10 Optical properties of GaAs structures containing a periodic system of layers of AsSb metal nanoinclusions in SEMICONDUCTORS
  • 2012-07 Novel self-assembled quantum dots in the GaSb/AlAs heterosystem in JETP LETTERS
  • 2011-12 Electron microscopy of GaAs Structures with InAs and as quantum dots in SEMICONDUCTORS
  • 2011-10 Formation of type-II InAs/GaSb strained short-period superlattices for IR photodetectors by molecular beam epitaxy in OPTOELECTRONICS, INSTRUMENTATION AND DATA PROCESSING
  • 2011-10 Strained germanium films in Ge/InGaAs/GaAs heterostructures: Formation of edge misfit dislocations at the Ge/InGaAs interface in PHYSICS OF THE SOLID STATE
  • 2011-02 Molecular-beam epitaxy of GaAs/Si(001) structures for high-performance tandem AIIIBV/Si-solar energy converters on an active silicon substrate in RUSSIAN PHYSICS JOURNAL
  • 2009-12 GaAs structures with InAs and As quantum dots produced in a single molecular beam epitaxy process in SEMICONDUCTORS
  • 2009-10 Formation of dislocation defects in the process of burying of InAs quantum dots into GaAs in SEMICONDUCTORS
  • 2009-08 High-resolution X-ray diffraction studies of the GaAs structures grown at a low temperature and periodically δ-doped with antimony and phosphorus in SEMICONDUCTORS
  • 2009-02 As cluster array formation in GaAs grown by molecular-beam epitaxy at a low temperature and δ-doped with phosphorus in SEMICONDUCTORS
  • 2000-09 Accumulation of majority charge carriers in GaAs layers containing arsenic nanoclusters in SEMICONDUCTORS
  • 1999-10 Influence of indium doping on the formation of silicon-(gallium vacancy) complexes in gallium arsenide grown by molecular-beam epitaxy at low temperatures in SEMICONDUCTORS
  • 1999-08 Structure and properties of InGaAs layers grown by low-temperature molecular-beam epitaxy in SEMICONDUCTORS
  • 1998-10 Arsenic cluster superlattice in gallium arsenide grown by low-temperature molecular-beam epitaxy in SEMICONDUCTORS
  • 1998-10 Accumulation of electrons in GaAs layers grown at low temperatures and containing arsenic clusters in SEMICONDUCTORS
  • 1998-09 Structure and properties of epitaxial GaAs and InGaAs films grown by low-temperature molecular-beam epitaxy in RUSSIAN PHYSICS JOURNAL
  • 1998-09 Donor-acceptor recombination in type-II GaAs/AlAs superlattices in PHYSICS OF THE SOLID STATE
  • 1998-07 Effect of isovalent indium doping on excess arsenic in gallium arsenide grown by molecular-beam epitaxy at low temperatures in SEMICONDUCTORS
  • 1998-07 Indium layers in low-temperature gallium arsenide: Structure and how it changes under annealing in the temperature range 500–700 °C in SEMICONDUCTORS
  • 1998-01 High-resolution x-ray diffraction study of InAs-GaAs superlattices grown by molecular-beam epitaxy at low temperature in SEMICONDUCTORS
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