M D Efremov

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Publications in SciGraph latest 50 shown

  • 2012-09 A model to describe the humplike feature observed in the accumulation branch of capacitance-voltage characteristics of MOS capacitors with oxide-hosted silicon nanoparticles in TECHNICAL PHYSICS LETTERS
  • 2011-10 Oxidation kinetics of a silicon surface in a plasma of oxygen with inert gases in OPTOELECTRONICS, INSTRUMENTATION AND DATA PROCESSING
  • 2010-09 Conductance simulation in an a-Si:H thin-film transistor with Schottky barriers in SEMICONDUCTORS
  • 2008-05 Raman investigation of the electron-phonon interaction in n-type silicon nanocrystals in PHYSICS OF THE SOLID STATE
  • 2008-04 Structure, phase composition, and optical properties of silicon nanopowders in BULLETIN OF THE RUSSIAN ACADEMY OF SCIENCES: PHYSICS
  • 2008-02 Variation in optical-absorption edge in SiNx layers with silicon clusters in SEMICONDUCTORS
  • 2007-09 Phase transitions in a-Si:H films on a glass irradiated by high-power femtosecond pulses: Manifestation of nonlinear and nonthermal effects in JETP LETTERS
  • 2007-08 Determination of the composition and strains in GexSi1−x-based nanostructures from Raman spectroscopy data with consideration of the contribution of the heterointerface in SEMICONDUCTORS
  • 2006-11 Determination of the composition and stresses in GexSi(1−x) heterostructures from Raman spectroscopy data: Refinement of model parameters in SEMICONDUCTORS
  • 2006-10 Electrical properties and photoluminescence of SiOx layers with Si nanocrystals in relation to the SiOx composition in SEMICONDUCTORS
  • 2006-10 Delocalization of phonon-plasmon modes in GaAs/AlAs superlattices with tunnel-thin AlAs barriers in JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS
  • 2006-02 Modification of quantum dots in Ge/Si nanostructures by pulsed laser irradiation in SEMICONDUCTORS
  • 2005-10 Effect of quantum confinement on optical properties of Ge nanocrystals in GeO2 films in SEMICONDUCTORS
  • 2005-08 Coulomb blockade of the conductivity of SiOx films due to one-electron charging of a silicon quantum dot in a chain of electronic states in SEMICONDUCTORS
  • 2005-07 Electron-phonon interaction in boron-doped silicon nanocrystals: Effect of Fano interference on the Raman spectrum in JETP LETTERS
  • 2005-04 Special features of the electrical conductivity in doped α-Si:H films with silicon nanocrystals in SEMICONDUCTORS
  • 2005-04 Phonon localization in Ge nanoislands and its manifestation in Raman spectra in JETP LETTERS
  • 2005-02 Effect of implanted phosphorus ions on the crystallization of amorphous silicon films under the action of pulsed excimer laser radiation in TECHNICAL PHYSICS LETTERS
  • 2005-02 Dichroism in transmission of light by an array of self-assembled GaAs quantum wires on a nanofaceted A(311) surface in PHYSICS OF THE SOLID STATE
  • 2004-10 Visible photoluminescence from silicon nanopowders produced by silicon evaporation in a high-power electron beam in JETP LETTERS
  • 2004-10 Ge/Si waveguide photodiodes with built-in layers of Ge quantum dots for fiber-optic communication lines in SEMICONDUCTORS
  • 2004-04 Elemental composition of nanoclusters formed by pulsed irradiation with low-energy ions during Ge/Si epitaxy in JETP LETTERS
  • 2003-11 Pulsed-laser modification of germanium nanoclusters in silicon in SEMICONDUCTORS
  • 2003-10 Resonance raman scattering in Ge nanoislands grown on a Si(111) substrate coated with an ultrathin SiO2 layer in SEMICONDUCTORS
  • 2003-07 Nanocrystalline silicon films formed under the impact of pulsed excimer laser radiation on polyimide substrates in TECHNICAL PHYSICS LETTERS
  • 2003-04 Photoluminescence of GeO2 films containing germanium nanocrystals in JETP LETTERS
  • 2002-01 Formation of silicon nanocrystals with preferred (100) orientation in amorphous Si:H films grown on glass substrates and exposed to nanosecond pulses of ultraviolet radiation in SEMICONDUCTORS
  • 2001-05 Interface structure and growth mode of quantum wire and quantum dot GaAs-AlAs structures on corrugated (311)A surfaces in JOURNAL OF ELECTRONIC MATERIALS
  • 2000-06 Phonon-plasmon interaction in tunneling GaAs/AlAs superlattices in JETP LETTERS
  • 2000-01 Transverse optical phonon splitting in GaAs/AlAs superlattices grown on the GaAs(311) surface studied by the method of Raman light scattering in SEMICONDUCTORS
  • 1999-07 Lateral localization of optical phonons in GaAs quantum islands in JETP LETTERS
  • 1997-07 Splitting of transverse optical phonon modes localized in GaAs quantum wires on a faceted (311)A surface in JETP LETTERS
  • 1996-06 Observation of LO-phonon localization in GaAs quantum wires on faceted (311)A surfaces in JETP LETTERS
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