Sergey A Blokhin


Ontology type: schema:Person     


Person Info

NAME

Sergey A

SURNAME

Blokhin

Publications in SciGraph latest 50 shown

  • 2020-12 The Effect of a Saturable Absorber in Long-Wavelength Vertical-Cavity Surface-Emitting Lasers Fabricated by Wafer Fusion Technology in TECHNICAL PHYSICS LETTERS
  • 2020-10-09 1.55-μm-Range Vertical-Cavity Surface-Emitting Lasers, Manufactured by Wafer Fusion of Heterostructures Grown by Solid-Source Molecular-Beam Epitaxy in SEMICONDUCTORS
  • 2020-09-08 A Study of the Photoresponse in Graphene Produced by Chemical Vapor Deposition in SEMICONDUCTORS
  • 2020-09 A Vertical-Cavity Surface-Emitting Laser for the 1.55-μm Spectral Range with Tunnel Junction Based on n++-InGaAs/p++-InGaAs/p++-InAlGaAs Layers in TECHNICAL PHYSICS LETTERS
  • 2020-08 Investigation of Anomalous Lasing in Vertical-Cavity Surface-Emitting Lasers of the 850-nm Spectral Range with a Double Oxide Current Aperture at Large Gain-to-Cavity Detuning in OPTICS AND SPECTROSCOPY
  • 2019-11 InAlAs/InGaAs/InP High-Electron-Mobility Transistors with a Composite Channel and Higher Breakdown Characteristics in TECHNICAL PHYSICS LETTERS
  • 2019-10 Heterobarrier Varactors with Nonuniformly Doped Modulation Layers in TECHNICAL PHYSICS LETTERS
  • 2019-08-07 Influence of Output Optical Losses on the Dynamic Characteristics of 1.55-μm Wafer-Fused Vertical-Cavity Surface-Emitting Lasers in SEMICONDUCTORS
  • 2019-08-07 Evaluation of the Impact of Surface Recombination in Microdisk Lasers by Means of High-Frequency Modulation in SEMICONDUCTORS
  • 2019-08 Energy Consumption for High-Frequency Switching of a Quantum-Dot Microdisk Laser in TECHNICAL PHYSICS LETTERS
  • 2019-07 Analysis of the Internal Optical Losses of the Vertical-Cavity Surface-Emitting Laser of the Spectral Range of 1.55 µm Formed by a Plate Sintering Technique in OPTICS AND SPECTROSCOPY
  • 2019-06 Erratum to: Optical Gain of 1550-nm-Range Multiple-Quantum-Well Heterostructures and Limiting Modulation Frequencies of Vertical-Cavity Surface-Emitting Lasers Based on Them in OPTICS AND SPECTROSCOPY
  • 2018-10 Epitaxial InGaAs/InAlAs/AlAs Structures for Heterobarrier Varactors with Low Leakage Current in TECHNICAL PHYSICS LETTERS
  • 2018-10 Erratum to: Optical Gain of 1550-nm Range Multiple-Quantum-Well Heterostructures and Limiting Modulation Frequencies of Vertical-Cavity Surface-Emitting Lasers Based on Them in OPTICS AND SPECTROSCOPY
  • 2018-08 Optical Gain of 1550-nm Range Multiple-Quantum-Well Heterostructures and Limiting Modulation Frequencies of Vertical-Cavity Surface-Emitting Lasers Based on Them in OPTICS AND SPECTROSCOPY
  • 2018-07 Laser Source for a Compact Nuclear Magnetic Resonance Gyroscope in GYROSCOPY AND NAVIGATION
  • 2018-01 The Influence of Cavity Design on the Linewidth of Near-IR Single-Mode Vertical-Cavity Surface-Emitting Lasers in TECHNICAL PHYSICS LETTERS
  • 2018-01 A Design and New Functionality of Antiwaveguiding Vertical-Cavity Surface-Emitting Lasers for a Wavelength of 850 nm in TECHNICAL PHYSICS LETTERS
  • 2018-01 High-Speed Semiconductor Vertical-Cavity Surface-Emitting Lasers for Optical Data-Transmission Systems (Review) in TECHNICAL PHYSICS LETTERS
  • 2018-01 Vertical-Cavity Surface-Emitting 1.55-μm Lasers Fabricated by Fusion in TECHNICAL PHYSICS LETTERS
  • 2018-01 Emission-Line Width and α-Factor of 850-nm Single-Mode Vertical-Cavity Surface-Emitting Lasers Based on InGaAs/AlGaAs Quantum Wells in SEMICONDUCTORS
  • 2017-12 Peaking of Optical Pulses in Vertical-Cavity Surface-Emitting Lasers with an Active Region Based on Submonolayer InGaAs Quantum Dots in TECHNICAL PHYSICS LETTERS
  • 2017-11-03 Molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors in SEMICONDUCTORS
  • 2017-09-03 Optical properties of metamorphic hybrid heterostuctures for vertical-cavity surface-emitting lasers operating in the 1300-nm spectral range in SEMICONDUCTORS
  • 2016-10-11 Polarization characteristics of 850-nm vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal oxide current aperture in SEMICONDUCTORS
  • 2016-10 Laser generation at 1.3 μm in vertical microcavities containing InAs/InGaAs quantum dot arrays under optical pumping in TECHNICAL PHYSICS LETTERS
  • 2016-10 A study of distributed dielectric bragg reflectors for vertically emitting lasers of the near-IR range in TECHNICAL PHYSICS LETTERS
  • 2016-09-16 Optical properties of InGaAs/InGaAlAs quantum wells for the 1520–1580 nm spectral range in SEMICONDUCTORS
  • 2016-03-31 Microdisk Injection Lasers for the 1.27-μm Spectral Range in SEMICONDUCTORS
  • 2015-01-08 Study of high-speed semiconductor VCSELs based on AlInGaAs heterostructures with large gain-cavity detuning in SEMICONDUCTORS
  • 2014-12-02 Effect of the photon lifetime on the characteristics of 850-nm vertical-cavity surface-emitting lasers with fully doped distributed Bragg reflectors and an oxide current aperture in SEMICONDUCTORS
  • 2014-12 Precise calibration of thickness and composition of epitaxial AlGaAs heterostructures with vertical-cavity optical microresonators in TECHNICAL PHYSICS LETTERS
  • 2014-01-05 Degradation-robust 850-nm vertical-cavity surface-emitting lasers for 25Gb/s optical data transmission in SEMICONDUCTORS
  • 2013-11-06 Efficient electro-optic semiconductor medium based on type-II heterostructures in SEMICONDUCTORS
  • 2013-07-06 Single-spatial-mode semiconductor VCSELs with a nonplanar upper dielectric DBR in SEMICONDUCTORS
  • 2013-06-10 Influence of optical losses on the dynamic characteristics of linear arrays of near-infrared vertical-cavity surface-emitting lasers in SEMICONDUCTORS
  • 2013-05-09 High-frequency electrical properties of a vertical-cavity surface-emitting laser with a monolithically integrated electro-optical modulator in SEMICONDUCTORS
  • 2013-01-07 Optical anisotropy of InGaAs quantum dots in SEMICONDUCTORS
  • 2012-11 Influence of the position of InGaAs quantum dot array on the spectral characteristics of AlGaAs/GaAs photovoltaic converters in TECHNICAL PHYSICS LETTERS
  • 2012-02 Decreasing parasitic capacitance in vertical-cavity surface-emitting laser with selectively oxidized aperture in TECHNICAL PHYSICS LETTERS
  • 2011-12-29 Submicron surface relief fabrication technology for epitaxial GaAs structures with thin AlGaAs stop layers in TECHNICAL PHYSICS LETTERS
  • 2011-07-28 Effect of inhomogeneous broadening of submonolayer quantum dots on the generation of vertical-cavity laser with saturable absorber in OPTICS AND SPECTROSCOPY
  • 2011-07-08 Effect of AlGaAs-(AlGa)xOy pedestal parameters on characteristics of a microdisk laser with active region based on InAs/InGaAs quantum dots in SEMICONDUCTORS
  • 2011-06-18 Matrices of 960-nm vertical-cavity surface-emitting lasers in SEMICONDUCTORS
  • 2011-05-15 Dynamic properties of AlGaAs vertical cavity surface emitting lasers with active region based on submonolayer InAs insertions in SEMICONDUCTORS
  • 2010-12-29 Optical anisotropy of InAs quantum dots in TECHNICAL PHYSICS LETTERS
  • 2010-10-12 Analysis of mechanisms of carrier emission in the p-i-n structures with In(Ga)As quantum dots in SEMICONDUCTORS
  • 2010-08-19 Bistable lasing of the vertical cavity surface emitting laser with a saturable absorber in OPTICS AND SPECTROSCOPY
  • 2009-12-24 Generation of π modes in semiconductor vertical-cavity surface-emitting lasers in TECHNICAL PHYSICS LETTERS
  • 2009-04-28 AlGaAs/GaAs photovoltaic cells with an array of InGaAs QDs in SEMICONDUCTORS
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