Alexey R Kovsh

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Alexey R



Publications in SciGraph latest 50 shown

  • 2014-09 Investigation of light extraction from light emitting module chip-on-board in OPTICAL REVIEW
  • 2014-09 Ce3+:YAG doped glass-ceramics for white light-emitting diode in OPTICAL REVIEW
  • 2013-12-28 Effects of light scattering in optical coatings on energy losses in LED devices in TECHNICAL PHYSICS LETTERS
  • 2012-10-10 Device characteristics of long-wavelength lasers based on self-organized quantum dots in SEMICONDUCTORS
  • 2010-10-12 A single-spatial-mode semiconductor laser based on InAs/InGaAs quantum dots with a diffraction filter of optical modes in SEMICONDUCTORS
  • 2010-10-12 Analysis of mechanisms of carrier emission in the p-i-n structures with In(Ga)As quantum dots in SEMICONDUCTORS
  • 2009-04-28 AlGaAs/GaAs photovoltaic cells with an array of InGaAs QDs in SEMICONDUCTORS
  • 2008-12-23 High-gain injection quantum-dot lasers operating at wavelengths above 1300 nm in TECHNICAL PHYSICS LETTERS
  • 2008-10-25 Modelocked quantum dot vertical external cavity surface emitting laser in APPLIED PHYSICS B
  • 2008-07-30 A narrow-line-width external cavity quantum dot laser for high-resolution spectroscopy in the near-infrared and yellow spectral ranges in APPLIED PHYSICS B
  • 2007-10 The use of spatially ordered arrays of etched holes for fabrication of single-mode vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots in SEMICONDUCTORS
  • 2007-08 Polarization dependence of the stark shift in the absorption edge of InGaAs/GaAs quantum dot heterostructures in TECHNICAL PHYSICS LETTERS
  • 2005-04 Effect of p-doping of the active region on the temperature stability of InAs/GaAs QD lasers in SEMICONDUCTORS
  • 2004-06 Ultrafast creation and annihilation of space-charge domains in a semiconductor superlattice observed by use of Terahertz fields in THE EUROPEAN PHYSICAL JOURNAL B
  • 2004-06 High-power 1.5 µm InAs-InGaAs quantum dot lasers on GaAs substrates in SEMICONDUCTORS
  • 2004-01 High-power single-mode 1.3-μm lasers based on InAs/AlGaAs/GaAs quantum dot heterostructures in TECHNICAL PHYSICS LETTERS
  • 2003-11 Optical properties of MBE-grown ultrathin GaAsN insertions in GaAs matrix in SEMICONDUCTORS
  • 2003-10 Temperature characteristics of low-threshold high-efficiency quantum-dot lasers with the emission wavelength from 1.25 to 1.29 µm in SEMICONDUCTORS
  • 2003-09 Metamorphic lasers for 1.3-µm spectral range grown on GaAs substrates by MBE in SEMICONDUCTORS
  • 2003-09 Metamorphic modulation-doped InAlAs/InGaAs/InAlAs heterostructures with high electron mobility grown on gaas substrates in SEMICONDUCTORS
  • 2003 1.5 micron InAs quantum dot lasers based on metamorphic InGaAs/GaAs heterostructures. in MRS ADVANCES
  • 2002-11 High efficiency (ηD>80%) long wavelength (λ>1.25 μm) quantum dot diode lasers on GaAs substrates in SEMICONDUCTORS
  • 2002-09 Effect of carrier localization on the optical properties of MBE-grown GaAsN/GaAs heterostructures in SEMICONDUCTORS
  • 2002-08 Wavelength of emission from InGaAsN quantum wells as a function of composition of the quaternary compound in SEMICONDUCTORS
  • 2002-06 Molecular beam epitaxy of (Al)GaAsN using ammonia as a source of nitrogen in TECHNICAL PHYSICS LETTERS
  • 2001-08 Anisotropy of the spatial distribution of In(Ga)As quantum dots in In(Ga)As-GaAs multilayer heterostructures studied by X-ray and synchrotron diffraction and transmission electron microscopy in SEMICONDUCTORS
  • 2001-07 1.3 µm vertical microcavities with InAs/InGaAs quantum dots and devices based on them in SEMICONDUCTORS
  • 2001-07 Comparative analysis of long-wavelength (1.3 µm) VCSELs on GaAs substrates in SEMICONDUCTORS
  • 2001-05 Thermodynamic analysis of the growth of GaAsN ternary compounds by molecular beam epitaxy in SEMICONDUCTORS
  • 2001 Reversibility of the Island Shape, Volume and Density in Stranski-Krastanow Growth in PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS PART I
  • 2001 Hot electron optical phenomena in GaAs/AlAs MQW structures in strong lateral electric field in PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS PART I
  • 2000-05 Power conversion efficiency of quantum dot laser diodes in SEMICONDUCTORS
  • 2000-05 Stacked InAs/InGaAs quantum dot heterostructures for optical sources emitting in the 1.3 µm wavelength range in SEMICONDUCTORS
  • 2000-03 Mechanisms of InGaAlAs solid solution decomposition stimulated by InAs quantum dots in SEMICONDUCTORS
  • 2000-01 A spatially single-mode laser for a range of 1.25–1.28 μm on the basis of InAs quantum dots on a GaAs substrate in SEMICONDUCTORS
  • 2000 Quantum dots for GaAs-based surface emitting lasers at 1300 nm in ADVANCES IN SOLID STATE PHYSICS 40
  • 1999-11 Temperature dependence of the gain of lasers based on quantum-dot arrays with an inhomogeneously broadened density of states in SEMICONDUCTORS
  • 1999-11 X-Ray diffraction analysis of multilayer InAs-GaAs heterostructures with InAs quantum dots in SEMICONDUCTORS
  • 1999-09 Gain characteristics of quantum-dot injection lasers in SEMICONDUCTORS
  • 1999-08 Long-wavelength emission in structures with quantum dots formed in the stimulated decomposition of a solid solution at strained islands in SEMICONDUCTORS
  • 1999-08 Lasing at a wavelength close to 1.3 µm in InAs quantum-dot structures in SEMICONDUCTORS
  • 1999-06 Quantum-dot injection heterolaser with 3.3 W output power in TECHNICAL PHYSICS LETTERS
  • 1999-05 InGaAs/GaAs structures with quantum dots in vertical optical cavities for wavelengths near 1.3 µm in SEMICONDUCTORS
  • 1999-05 Emission of electrons from the ground and first excited states of self-organized InAs/GaAs quantum dot structures in JOURNAL OF ELECTRONIC MATERIALS
  • 1999-05 Metastable population of self-organized InAs/GaAs quantum dots in JOURNAL OF ELECTRONIC MATERIALS
  • 1999-04 Exciton waveguide and lasing in structures with superfine GaAs quantum wells and InAs submonolayer inclusions in an AlGaAs host in SEMICONDUCTORS
  • 1999-02 Photo-and electroluminescence in the 1.3-µm wavelength range from quantum-dot structures grown on GaAs substrates in SEMICONDUCTORS
  • 1999-02 Capacitance spectroscopy of deep states in InAs/GaAs quantum dot heterostructures in SEMICONDUCTORS
  • 1999-02 Gain in injection lasers based on self-organized quantum dots in SEMICONDUCTORS
  • 1999-02 Influence of growth conditions on the formation and luminescence properties of InGaAs quantum dots in a Si matrix in SEMICONDUCTORS
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