L S Vavilova


Ontology type: schema:Person     


Person Info

NAME

L S

SURNAME

Vavilova

Publications in SciGraph latest 50 shown

  • 2016-07 Structural and optical properties of GaAs(100) with a thin surface layer doped with chromium in SEMICONDUCTORS
  • 2014-11 Structure and optical properties of thin Al2O3 films deposited by the reactive ion-plasma sputtering method on GaAs (100) substrates in SEMICONDUCTORS
  • 2014-10 On the temperature delocalization of carriers in GaAs/AlGaAs/InGaAs quantum-well heterostructures in SEMICONDUCTORS
  • 2013-08 850-nm diode lasers with different ways of compensating for internal mechanical stresses in an AlGaAs:P/GaAs heterostructure in SEMICONDUCTORS
  • 2013-01 Semiconductor lasers with internal wavelength selection in SEMICONDUCTORS
  • 2012-10 850-nm diode lasers based on AlGaAsP/GaAs heterostructures in SEMICONDUCTORS
  • 2011-11 Spinodal Decomposition of GaxIn1−xAsyP1−yQuaternary Alloys in SEMICONDUCTORS
  • 2011-10 Diode lasers emitting at 1220 nm with a highly strained GaInAs quantum well and GaAsP compensating layers MOCVD-grown on a GaAs substrate in SEMICONDUCTORS
  • 2010-06 Pulsed semiconductor lasers with higher optical strength of cavity output mirrors in SEMICONDUCTORS
  • 2010-05 Temperature delocalization of charge carriers in semiconductor lasers in SEMICONDUCTORS
  • 2008-09 Composition and parameters of domains resulting from spinodal decomposition of quaternary alloys in epitaxial GaInP/GaxIn1 − xAsyP1 − y/GaInP/GaAs(001) heterostructures in SEMICONDUCTORS
  • 2008-07 High-power single-mode laser diodes (λ = 1.1–1.2 μm) based on quantum-confined AlInGaAs/InP heterostructures in TECHNICAL PHYSICS LETTERS
  • 2003-09 Optical and structural properties of ingaasp miscibility-gap solid solutions grown by MOVPE on GaAs(001) substrates in SEMICONDUCTORS
  • 2002-09 Structural and electrical characteristics of epitaxial InP layers on porous substrates and the parameters of related Au-Ti Schottky barriers in TECHNICAL PHYSICS LETTERS
  • 2000-11 Epitaxial deposition of InGaAsP solid solutions in the miscibility gap in SEMICONDUCTORS
  • 2000-03 Photoluminescent and electroluminescent properties of spontaneously forming periodic InGaAsP structures in SEMICONDUCTORS
  • 1999-09 Spontaneously assembling periodic composition-modulated InGaAsP structures in SEMICONDUCTORS
  • 1999-05 Spontaneously forming periodic composition-modulated InGaAsP structures in SEMICONDUCTORS
  • 1998-06 Self-organizing nanoheterostructures in InGaAsP solid solutions in SEMICONDUCTORS
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