Anton Yu Egorov


Ontology type: schema:Person     


Person Info

NAME

Anton Yu

SURNAME

Egorov

Publications in SciGraph latest 50 shown

  • 2022-01 Quantum-Cascade Laser with Radiation Emission through a Textured Layer in SEMICONDUCTORS
  • 2021-07 Surface Emitting Quantum-Cascade Ring Laser in SEMICONDUCTORS
  • 2021-02 Optical Properties of Three-Dimensional InGaP(As) Islands Formed by Substitution of Fifth-Group Elements in OPTICS AND SPECTROSCOPY
  • 2020-12-11 Studying the Optical and Structural Properties of Three-Dimensional InGaP(As) Islands Formed by Substitution of Elements of the Fifth Group in TECHNICAL PHYSICS
  • 2020-12 Quantum-Cascade Ring Resonator Laser with 7–8 μm Wavelength and Surface Radiation Output in SEMICONDUCTORS
  • 2020-12 The Effect of a Saturable Absorber in Long-Wavelength Vertical-Cavity Surface-Emitting Lasers Fabricated by Wafer Fusion Technology in TECHNICAL PHYSICS LETTERS
  • 2020-11 The Influence of the Parameters of a Short-Period InGaAs/InGaAlAs Superlattice on Photoluminescence Efficiency in TECHNICAL PHYSICS LETTERS
  • 2020-11 A Study of the Spatial-Emission Characteristics of Quantum-Cascade Lasers for the 8-μm Spectral Range in TECHNICAL PHYSICS LETTERS
  • 2020-10-09 1.55-μm-Range Vertical-Cavity Surface-Emitting Lasers, Manufactured by Wafer Fusion of Heterostructures Grown by Solid-Source Molecular-Beam Epitaxy in SEMICONDUCTORS
  • 2020-09-08 A Study of the Photoresponse in Graphene Produced by Chemical Vapor Deposition in SEMICONDUCTORS
  • 2020-09 A Vertical-Cavity Surface-Emitting Laser for the 1.55-μm Spectral Range with Tunnel Junction Based on n++-InGaAs/p++-InGaAs/p++-InAlGaAs Layers in TECHNICAL PHYSICS LETTERS
  • 2020-08-31 Spectral Dynamics of Quantum Cascade Lasers Generating Frequency Combs in the Long-Wavelength Infrared Range in TECHNICAL PHYSICS
  • 2020-08 Spectral Characteristics of Half-Ring Quantum-Cascade Lasers in OPTICS AND SPECTROSCOPY
  • 2020-06 Study of the Spectra of Arched-Cavity Quantum-Cascade Lasers in OPTICS AND SPECTROSCOPY
  • 2020-05 Heterostructures of Quantum-Cascade Laser for the Spectral Range of 4.6 μm for Obtaining a Continuous-Wave Lasing Mode in TECHNICAL PHYSICS LETTERS
  • 2020-04 Quantum-Cascade Lasers with a Distributed Bragg Reflector Formed by Ion-Beam Etching in TECHNICAL PHYSICS LETTERS
  • 2019-12 Optical Gain in Laser Heterostructures with an Active Area Based on an InGaAs/InGaAlAs Superlattice in OPTICS AND SPECTROSCOPY
  • 2019-11 Spectral Shift of Quantum-Cascade Laser Emission under the Action of Control Voltage in TECHNICAL PHYSICS LETTERS
  • 2019-10 Generation of Frequency Combs by Quantum Cascade Lasers Emitting in the 8-μm Wavelength Range in TECHNICAL PHYSICS LETTERS
  • 2019-08-07 Influence of Output Optical Losses on the Dynamic Characteristics of 1.55-μm Wafer-Fused Vertical-Cavity Surface-Emitting Lasers in SEMICONDUCTORS
  • 2019-08 Lasing of a Quantum-Cascade Laser with a Thin Upper Cladding in OPTICS AND SPECTROSCOPY
  • 2019-07-15 Enhancement of light emission in Bragg monolayer-thick quantum well structures in SCIENTIFIC REPORTS
  • 2019-07 High-Power Quantum-Cascade Lasers Emitting in the 8-μm Wavelength Range in TECHNICAL PHYSICS LETTERS
  • 2019-07 Analysis of the Internal Optical Losses of the Vertical-Cavity Surface-Emitting Laser of the Spectral Range of 1.55 µm Formed by a Plate Sintering Technique in OPTICS AND SPECTROSCOPY
  • 2019-06 Temperature Dependence of the Parameters of 1.55-μm Semiconductor Lasers with Thin Quantum Wells Based on Phosphorus-Free Heterostructures in TECHNICAL PHYSICS LETTERS
  • 2019-04 Room Temperature Lasing of Single-Mode Arched-Cavity Quantum-Cascade Lasers in TECHNICAL PHYSICS LETTERS
  • 2019-03 Spontaneous Emission and Lasing of a Two-Wavelength Quantum-Cascade Laser in SEMICONDUCTORS
  • 2018-12-27 Experimental Study of Spontaneous Emission in the Bragg Multiple Quantum Wells Structure of InAs Monolayers Embedded in a GaAs Matrix in SEMICONDUCTORS
  • 2018-11-22 Turn-on Dynamics of Quantum Cascade Lasers with a Wavelength of 8100 nm at Room Temperature in TECHNICAL PHYSICS
  • 2018-11-14 High Temperature Laser Generation of Quantum-Cascade Lasers in the Spectral Region of 8 μm in PHYSICS OF THE SOLID STATE
  • 2018-10-15 Lasing in 9.6-μm Quantum Cascade Lasers in TECHNICAL PHYSICS
  • 2018-09 Dual-Frequency Generation in Quantum Cascade Lasers of the 8-μm Spectral Range in OPTICS AND SPECTROSCOPY
  • 2018-08-22 On the Impact of Barrier-Layer Doping on the Photoluminescence Efficiency of InGaAlAs/InGaAs/InP Strained-Layer Heterostructures in SEMICONDUCTORS
  • 2018-07-06 Room Temperature Lasing of Multi-Stage Quantum-Cascade Lasers at 8 μm Wavelength in SEMICONDUCTORS
  • 2018-06-07 Experimental Study of Spontaneous Emission in Bragg Multiple- Quantum-Well Structures with InAs Single-Layer Quantum Wells in SEMICONDUCTORS
  • 2018-05-15 Heterostructures of Single-Wavelength and Dual-Wavelength Quantum-Cascade Lasers in SEMICONDUCTORS
  • 2018-02 Mode-Locked Lasers with “Thin” Quantum Wells in 1.55 μm Spectral Range in TECHNICAL PHYSICS LETTERS
  • 2018-01 Vertical-Cavity Surface-Emitting 1.55-μm Lasers Fabricated by Fusion in TECHNICAL PHYSICS LETTERS
  • 2017-09-03 Optical properties of metamorphic hybrid heterostuctures for vertical-cavity surface-emitting lasers operating in the 1300-nm spectral range in SEMICONDUCTORS
  • 2017-07 Heterostructures for quantum-cascade lasers of the wavelength range of 7–8 μm in TECHNICAL PHYSICS LETTERS
  • 2017-02-10 Study of the structural and optical properties of GaP(N) layers synthesized by molecular-beam epitaxy on Si(100) 4° substrates in SEMICONDUCTORS
  • 2016-10-11 Room-temperature operation of quantum cascade lasers at a wavelength of 5.8 μm in SEMICONDUCTORS
  • 2016-10-11 On the gain properties of “thin” elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm in SEMICONDUCTORS
  • 2016-09-16 Optical properties of InGaAs/InGaAlAs quantum wells for the 1520–1580 nm spectral range in SEMICONDUCTORS
  • 2016-08-02 Optical properties of photodetectors based on single GaN nanowires with a transparent graphene contact in SEMICONDUCTORS
  • 2016-06-17 Switching between the mode-locking and Q-switching modes in two-section QW lasers upon a change in the absorber properties due to the Stark effect in SEMICONDUCTORS
  • 2016-05-15 GaAs/InGaAsN heterostructures for multi-junction solar cells in SEMICONDUCTORS
  • 2016-05-15 Optical properties of metamorphic GaAs/InAlGaAs/InGaAs heterostructures with InAs/InGaAs quantum wells, emitting light in the 1250–1400-nm spectral range in SEMICONDUCTORS
  • 2016-03 The influence of an In0.52Al0.48As transition layer design on the transport characteristics of a metamorphic high-electron-mobility transistor in TECHNICAL PHYSICS LETTERS
  • 2015-11-04 Design concepts of monolithic metamorphic vertical-cavity surface-emitting lasers for the 1300–1550 nm spectral range in SEMICONDUCTORS
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