A Yu Egorov

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A Yu



Publications in SciGraph latest 50 shown

  • 2018-12 Experimental Study of Spontaneous Emission in the Bragg Multiple Quantum Wells Structure of InAs Monolayers Embedded in a GaAs Matrix in SEMICONDUCTORS
  • 2018-11 High Temperature Laser Generation of Quantum-Cascade Lasers in the Spectral Region of 8 μm in PHYSICS OF THE SOLID STATE
  • 2018-11 Turn-on Dynamics of Quantum Cascade Lasers with a Wavelength of 8100 nm at Room Temperature in TECHNICAL PHYSICS
  • 2018-10 Lasing in 9.6-μm Quantum Cascade Lasers in TECHNICAL PHYSICS
  • 2018-09 On the Impact of Barrier-Layer Doping on the Photoluminescence Efficiency of InGaAlAs/InGaAs/InP Strained-Layer Heterostructures in SEMICONDUCTORS
  • 2018-09 Dual-Frequency Generation in Quantum Cascade Lasers of the 8-μm Spectral Range in OPTICS AND SPECTROSCOPY
  • 2018-08 Room Temperature Lasing of Multi-Stage Quantum-Cascade Lasers at 8 μm Wavelength in SEMICONDUCTORS
  • 2018-07 Experimental Study of Spontaneous Emission in Bragg Multiple- Quantum-Well Structures with InAs Single-Layer Quantum Wells in SEMICONDUCTORS
  • 2018-06 Heterostructures of Single-Wavelength and Dual-Wavelength Quantum-Cascade Lasers in SEMICONDUCTORS
  • 2018-02 Mode-Locked Lasers with “Thin” Quantum Wells in 1.55 μm Spectral Range in TECHNICAL PHYSICS LETTERS
  • 2018-01 Vertical-Cavity Surface-Emitting 1.55-μm Lasers Fabricated by Fusion in TECHNICAL PHYSICS LETTERS
  • 2017-09 Optical properties of metamorphic hybrid heterostuctures for vertical-cavity surface-emitting lasers operating in the 1300-nm spectral range in SEMICONDUCTORS
  • 2017-07 Heterostructures for quantum-cascade lasers of the wavelength range of 7–8 μm in TECHNICAL PHYSICS LETTERS
  • 2017-02 Study of the structural and optical properties of GaP(N) layers synthesized by molecular-beam epitaxy on Si(100) 4° substrates in SEMICONDUCTORS
  • 2016-10 Room-temperature operation of quantum cascade lasers at a wavelength of 5.8 μm in SEMICONDUCTORS
  • 2016-10 On the gain properties of “thin” elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm in SEMICONDUCTORS
  • 2016-09 Optical properties of InGaAs/InGaAlAs quantum wells for the 1520–1580 nm spectral range in SEMICONDUCTORS
  • 2016-08 Optical properties of photodetectors based on single GaN nanowires with a transparent graphene contact in SEMICONDUCTORS
  • 2016-06 Switching between the mode-locking and Q-switching modes in two-section QW lasers upon a change in the absorber properties due to the Stark effect in SEMICONDUCTORS
  • 2016-05 GaAs/InGaAsN heterostructures for multi-junction solar cells in SEMICONDUCTORS
  • 2016-05 Optical properties of metamorphic GaAs/InAlGaAs/InGaAs heterostructures with InAs/InGaAs quantum wells, emitting light in the 1250–1400-nm spectral range in SEMICONDUCTORS
  • 2016-03 The influence of an In0.52Al0.48As transition layer design on the transport characteristics of a metamorphic high-electron-mobility transistor in TECHNICAL PHYSICS LETTERS
  • 2015-12 Super-radiant mode in InAs—monolayer–based Bragg structures in SCIENTIFIC REPORTS
  • 2015-11 Design concepts of monolithic metamorphic vertical-cavity surface-emitting lasers for the 1300–1550 nm spectral range in SEMICONDUCTORS
  • 2015-11 Lasing of multiperiod quantum-cascade lasers in the spectral range of (5.6–5.8)-μm under current pumping in SEMICONDUCTORS
  • 2015-10 Metamorphic distributed Bragg reflectors for the 1440–1600 nm spectral range: Epitaxy, formation, and regrowth of mesa structures in SEMICONDUCTORS
  • 2015-10 Power increase in Q-switched two-sectional quantum well lasers due to Stark effect in TECHNICAL PHYSICS LETTERS
  • 2015-09 Diffusive Propagation of Exciton-Polaritons through Thin Crystal Slabs in SCIENTIFIC REPORTS
  • 2015-04 Admittance spectroscopy of solar cells based on GaPNAs layers in SEMICONDUCTORS
  • 2015-04 Photoluminescence of heterostructures with GaP1 − xNx and GaP1 − x − yNxAsy layers grown on GaP and Si substrates by molecular-beam epitaxy in SEMICONDUCTORS
  • 2015-04 Experimental Demonstration of Reduced Light Absorption by Intracavity Metallic Layers in Tamm Plasmon-based Microcavity in PLASMONICS
  • 2015-04 MBE growth of GaP on a Si substrate in SEMICONDUCTORS
  • 2015-02 Control over the morphology of AlN during molecular beam epitaxy with the plasma activation of nitrogen on Si (111) substrates in SEMICONDUCTORS
  • 2014-12 Multiperiod quantum-cascade nanoheterostructures: Epitaxy and diagnostics in SEMICONDUCTORS
  • 2014-09 Analysis of thermal emission processes of electrons from arrays of InAs quantum dots in the space charge region of GaAs matrix in SEMICONDUCTORS
  • 2014-06 Evaluation of the quality of GaAs epitaxial layers and their interfaces from analysis of the exciton absorption spectra in SEMICONDUCTORS
  • 2014-04 Ultra-wide electroluminescence spectrum of LED heterostructures based on GaPAsN semiconductor alloys in SEMICONDUCTORS
  • 2014-03 Molecular beam epitaxy of GaPN, GaPAsN, and InGaPN nitride solid solutions in SEMICONDUCTORS
  • 2014-03 Design of multijunction GaPNAs/Si heterostructure solar cells by computer simulation in SEMICONDUCTORS
  • 2013-12 Dependence of the hybridization parameter on nitrogen molar fraction in nitrogen-containing GaPN solid solutions in TECHNICAL PHYSICS LETTERS
  • 2013-12 Photoelectric properties of solar cells based on GaPNAs/GaP heterostructures in TECHNICAL PHYSICS LETTERS
  • 2013-06 Influence of optical losses on the dynamic characteristics of linear arrays of near-infrared vertical-cavity surface-emitting lasers in SEMICONDUCTORS
  • 2013-01 Optical orientation of nuclei in nitrogen alloys GaAsN at room temperature in JETP LETTERS
  • 2012-08 Resonance reflection of light by a periodic system of excitons in GaAs/AlGaAs quantum wells in SEMICONDUCTORS
  • 2012-06 Electroluminescence of GaPxNyAs1 − x − y nanoheterostructures through a transparent electrode made of CVD graphene in SEMICONDUCTORS
  • 2012-05 Optical properties of GaNxAsyP1−x−y semiconductor quaternary solid solutions in JOURNAL OF SURFACE INVESTIGATION: X-RAY, SYNCHROTRON AND NEUTRON TECHNIQUES
  • 2012-04 The effect of barrier width in coupled asymmetric double quantum well structure on passive mode-locking region of existence in TECHNICAL PHYSICS LETTERS
  • 2011-09 Optical properties of quantum-confined heterostructures based on GaPxNyAs1 − x − y alloys in SEMICONDUCTORS
  • 2011-06 Electrochemical capacitance-voltage profiling of the free-carrier concentration in HEMT heterostructures based on InGaAs/AlGaAs/GaAs compounds in SEMICONDUCTORS
  • 2011-06 Mutual synchronization of two coupled self-oscillators based on GaAs/AlGaAs superlattices in TECHNICAL PHYSICS
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