A A Sitnikova


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Person Info

NAME

A A

SURNAME

Sitnikova

Publications in SciGraph latest 50 shown

  • 2018-12 Unveiling structural, chemical and magnetic interfacial peculiarities in ε-Fe2O3/GaN (0001) epitaxial films in SCIENTIFIC REPORTS
  • 2018-07 High-Temperature Annealing as a Method for the Silicon Nanoclusters Growth in Stoichiometric Silicon Dioxide in JOURNAL OF ELECTRONIC MATERIALS
  • 2018-01 Optimization of the Structural Properties and Surface Morphology of a Convex-Graded InxAl1–xAs (x = 0.05–0.83) Metamorphic Buffer Layer Grown via MBE on GaAs (001) in SEMICONDUCTORS
  • 2017-05 Stress generation and relaxation in (Al,Ga)N/6H-SiC heterostructure grown by plasma-assisted molecular-beam epitaxy in TECHNICAL PHYSICS LETTERS
  • 2017-01 Study of the parameters of nanoscale layers in nanoheterostructures based on II–VI semiconductor compounds in SEMICONDUCTORS
  • 2016-12 Development of a spinodal decomposition model for the example of a heterostructure based on silicon carbide polytypes in TECHNICAL PHYSICS LETTERS
  • 2016-10 Nanostructured magnetic films of iron oxides fabricated by laser electrodispersion in TECHNICAL PHYSICS LETTERS
  • 2016-06 Growth of silicon nanoclusters in thermal silicon dioxide under annealing in an atmosphere of nitrogen in SEMICONDUCTORS
  • 2016-05 Complex use of the diffraction techniques in depth profiling of the crystal lattice parameter and composition of InGaAs/GaAs gradient layers in TECHNICAL PHYSICS LETTERS
  • 2015-08 Molecular beam epitaxy of ZnSSe/CdSe short-period superlattices for III–V/II–VI multijunction solar cells in SEMICONDUCTORS
  • 2015-05 Study of the structure of 3D-ordered macroporous GaN-ZnS:Mn nanocomposite films in SEMICONDUCTORS
  • 2015-03 Large-area crystalline GaN slabs in TECHNICAL PHYSICS LETTERS
  • 2014-12 Analysis of stacking faults in gallium nitride by Fourier transform of high-resolution images in TECHNICAL PHYSICS LETTERS
  • 2014-01 Molecular beam epitaxy of AlGaAs/Zn(Mn)Se hybrid nanostructures with InAs/AlGaAs quantum dots near the heterovalent interface in SEMICONDUCTORS
  • 2013-10 Spontaneous and stimulated emission in the mid-ultraviolet range of quantum-well heterostructures based on AlGaN compounds grown by molecular beam epitaxy on c-sapphire substrates in PHYSICS OF THE SOLID STATE
  • 2013-09 Comparative study of 3C-SiC layers sublimation-grown on a 6H-SiC substrate in SEMICONDUCTORS
  • 2013-08 Structure of nanodiamonds prepared by laser synthesis in PHYSICS OF THE SOLID STATE
  • 2013-03 Integrated characterization of multilayer periodic systems with nanosized layers as applied to Mo/Si structures in PHYSICS OF THE SOLID STATE
  • 2013-02 Structure and transport properties of nanocarbon films prepared by sublimation on a 6H-SiC surface in SEMICONDUCTORS
  • 2012-09 Structural-phase transformations at annealing of highly reflective mirrors based on aluminum and silver in JOURNAL OF SURFACE INVESTIGATION: X-RAY, SYNCHROTRON AND NEUTRON TECHNIQUES
  • 2012-08 Quantum-confined stark effect and localization of charge carriers in Al0.3Ga0.7N/Al0.4Ga0.6N quantum wells with different morphologies in SEMICONDUCTORS
  • 2012-06 Formation of structures from amorphous metallic nanoparticles by dispersing metal drops continuously charging in an electron beam in TECHNICAL PHYSICS
  • 2012-05 Collective effects in the system of structural defects in homoepitaxial GaN grown on porous substrates in TECHNICAL PHYSICS LETTERS
  • 2011-10 Photoelectric properties of porous GaN/SiC heterostructures in SEMICONDUCTORS
  • 2011-10 Features of molecular-beam epitaxy and structural properties of AlInSb-based heterostructures in SEMICONDUCTORS
  • 2011-07 Study of the formation of silicon nanoclusters in silicon dioxide during electron beam irradiation in PHYSICS OF THE SOLID STATE
  • 2011-06 Electrochemical capacitance-voltage profiling of the free-carrier concentration in HEMT heterostructures based on InGaAs/AlGaAs/GaAs compounds in SEMICONDUCTORS
  • 2011-05 Characteristics of magnetism in nanoporous carbon with palladium clusters in PHYSICS OF THE SOLID STATE
  • 2009-10 Magnetism of palladium clusters in nanoporous carbon in JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS
  • 2009-09 Integrated diagnostics of heterostructures with QW layers in SEMICONDUCTORS
  • 2009-09 Experimental determination of dead layer thickness for excitons in a wide GaAs/AlGaAs quantum well in PHYSICS OF THE SOLID STATE
  • 2009-06 Investigation of 4H-SiC epitaxial layers implanted by Al ions in JOURNAL OF SURFACE INVESTIGATION: X-RAY, SYNCHROTRON AND NEUTRON TECHNIQUES
  • 2009-03 Palladium clusters in nanoporous carbon samples: Structural properties in PHYSICS OF THE SOLID STATE
  • 2008-12 AlGaN-based quantum-well heterostructures for deep ultraviolet light-emitting diodes grown by submonolayer discrete plasma-assisted molecular-beam epitaxy in SEMICONDUCTORS
  • 2008-11 Electron-microscopic investigation of a SiC/Si(111) structure obtained by solid phase epitaxy in TECHNICAL PHYSICS LETTERS
  • 2008-05 Features of the spatial distribution of indium in InGaN epitaxial layers grown by plasma-assisted molecular beam epitaxy in SEMICONDUCTORS
  • 2008-03 Platinum nanoclusters encapsulated in amorphous carbon in SEMICONDUCTORS
  • 2008-01 High-temperature nuclear-detector arrays based on 4 H-SiC ion-implantation-doped p+-n junctions in SEMICONDUCTORS
  • 2007-12 Determining the size of coherent nanoinclusions and the crystal lattice misfit parameter using dark-field transmission electron microscopy images in TECHNICAL PHYSICS LETTERS
  • 2007-11 CdSe/ZnSe quantum dot structures grown by molecular beam epitaxy with a CdTe submonolayer stressor in SEMICONDUCTORS
  • 2007-06 TEM study of the structure of gallium nitride epitaxial films grown on substrates with different interface morphologies in JOURNAL OF SURFACE INVESTIGATION: X-RAY, SYNCHROTRON AND NEUTRON TECHNIQUES
  • 2007-05 Photoluminescence of SiO2 layers prepared on β-SiC films and an analysis of their elemental composition in PHYSICS OF THE SOLID STATE
  • 2007-04 Cathodoluminescence and TEM studies of HVPE GaN layers grown on porous SiC substrates in SEMICONDUCTORS
  • 2007-04 Structural peculiarities of 4H-SiC irradiated by Bi ions in SEMICONDUCTORS
  • 2007-04 Cathodoluminescence of laser AIIBVI heterostructures in SEMICONDUCTORS
  • 2007-04 Si and Ge nanocluster formation in silica matrix in SEMICONDUCTORS
  • 2006-12 Mechanism of misfit stress relaxation during epitaxial growth of GaN on porous SiC substrates in TECHNICAL PHYSICS LETTERS
  • 2005-06 Giant Zeeman Splitting of Excitons in a III–V Nonmagnetic Quantum Well Electronically Coupled With a II–VI Semimagnetic Quantum Well in JOURNAL OF SUPERCONDUCTIVITY
  • 2005-05 Specific features of epitaxial-film formation on porous III–V substrates in SEMICONDUCTORS
  • 2003-09 Optical and structural properties of ingaasp miscibility-gap solid solutions grown by MOVPE on GaAs(001) substrates in SEMICONDUCTORS
  • Affiliations

  • Ioffe Institute (current)
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