Mikhail V Maximov


Ontology type: schema:Person     


Person Info

NAME

Mikhail V

SURNAME

Maximov

Publications in SciGraph latest 50 shown

  • 2018-02 Suppression of Recombination in the Waveguide of a Laser Heterostructure by Means of Double Asymmetric Barriers in SEMICONDUCTORS
  • 2018-01 Bimodality in Arrays of In0.4Ga0.6As Hybrid Quantum-Confined Heterostructures Grown on GaAs Substrates in SEMICONDUCTORS
  • 2017-10 On the high characteristic temperature of an InAs/GaAs/InGaAsP QD laser with an emission wavelength of ~1.5 μm on an InP substrate in SEMICONDUCTORS
  • 2017-05 InAs QDs in a metamorphic In0.25Ga0.75As matrix, grown by MOCVD in SEMICONDUCTORS
  • 2017-03 Optical properties of hybrid quantum-well–dots nanostructures grown by MOCVD in SEMICONDUCTORS
  • 2017-02 Specific features of waveguide recombination in laser structures with asymmetric barrier layers in SEMICONDUCTORS
  • 2017-02 Study of the structural and optical properties of GaP(N) layers synthesized by molecular-beam epitaxy on Si(100) 4° substrates in SEMICONDUCTORS
  • 2016-10 Laser characteristics of an injection microdisk with quantum dots and its free-space outcoupling efficiency in SEMICONDUCTORS
  • 2016-10 Theory of the power characteristics of quantum-well lasers with asymmetric barrier layers: Inclusion of asymmetry in electron- and hole-state filling in SEMICONDUCTORS
  • 2016-09 Optical properties of hybrid quantum-confined structures with high absorbance in SEMICONDUCTORS
  • 2016-05 Multilayer heterostructures for quantum-cascade lasers operating in the terahertz frequency range in SEMICONDUCTORS
  • 2016-03 Microdisk Injection Lasers for the 1.27-μm Spectral Range in SEMICONDUCTORS
  • 2015-11 Spatial hole burning and spectral stability of a quantum-dot laser in SEMICONDUCTORS
  • 2015-08 Effect of the bimodality of a QD array on the optical properties and threshold characteristics of QD lasers in SEMICONDUCTORS
  • 2015-07 The effect of sulfide passivation on luminescence from microdisks with quantum wells and quantum dots in TECHNICAL PHYSICS LETTERS
  • 2015-07 On the optimization of asymmetric barrier layers in InAlGaAs/AlGaAs laser heterostructures on GaAs substrates in SEMICONDUCTORS
  • 2015-05 Thermal resistance of ultra-small-diameter disk microlasers in SEMICONDUCTORS
  • 2015-05 The effect of asymmetric barrier layers in the waveguide region on power characteristics of QW lasers in TECHNICAL PHYSICS LETTERS
  • 2014-12 Ultrasmall microdisk and microring lasers based on InAs/InGaAs/GaAs quantum dots in NANOSCALE RESEARCH LETTERS
  • 2014-12 Lasing in microdisks of ultrasmall diameter in SEMICONDUCTORS
  • 2014-11 Multilayer quantum-dot arrays of high bulk density in SEMICONDUCTORS
  • 2013-12 Spectral dependence of the linewidth enhancement factor in quantum dot lasers in SEMICONDUCTORS
  • 2013-10 Effect of carrier dynamics and temperature on two-state lasing in semiconductor quantum dot lasers in SEMICONDUCTORS
  • 2013-10 Room-temperature lasing in microring cavities with an InAs/InGaAs quantum-dot active region in SEMICONDUCTORS
  • 2013-09 Laser generation in microdisc resonators with InAs/GaAs quantum dots transferred on a silicon substrate in TECHNICAL PHYSICS LETTERS
  • 2013-08 Optimization of the design and mode of operation of a QD laser for reducing the heat-to-bitrate ratio in SEMICONDUCTORS
  • 2013-01 Optical anisotropy of InGaAs quantum dots in SEMICONDUCTORS
  • 2012-11 Influence of the position of InGaAs quantum dot array on the spectral characteristics of AlGaAs/GaAs photovoltaic converters in TECHNICAL PHYSICS LETTERS
  • 2012-08 High-temperature lasing in a microring laser with an active region based on InAs/InGaAs quantum dots in SEMICONDUCTORS
  • 2012-08 Effect of asymmetric barrier layers in the waveguide region on the temperature characteristics of quantum-well lasers in SEMICONDUCTORS
  • 2012-05 Influence of inhomogeneous broadening and deliberately introduced disorder on the width of the lasing spectrum of a quantum dot laser in SEMICONDUCTORS
  • 2012-02 Features of simultaneous ground- and excited-state lasing in quantum dot lasers in SEMICONDUCTORS
  • 2012-02 Effect of an excited-state optical transition on the linewidth enhancement factor of quantum dot lasers in SEMICONDUCTORS
  • 2012-01 Harmonic mode-locking in quantum dot lasers with tunnel-coupled waveguides in TECHNICAL PHYSICS LETTERS
  • 2011-07 Effect of the nonlinear saturation of the gain on the peak modulation frequency in lasers based on self-assembled quantum dots in SEMICONDUCTORS
  • 2011-07 Effect of AlGaAs-(AlGa)xOy pedestal parameters on characteristics of a microdisk laser with active region based on InAs/InGaAs quantum dots in SEMICONDUCTORS
  • 2011-05 Dynamic properties of AlGaAs vertical cavity surface emitting lasers with active region based on submonolayer InAs insertions in SEMICONDUCTORS
  • 2011-04 A temperature-stable semiconductor laser based on coupled waveguides in SEMICONDUCTORS
  • 2011-04 Semiconductor lasers with asymmetric barrier layers: An approach to high temperature stability in SEMICONDUCTORS
  • 2011-02 Spectral width of laser generation in quantum dot lasers: An analytical approach in SEMICONDUCTORS
  • 2010-12 Optical anisotropy of InAs quantum dots in TECHNICAL PHYSICS LETTERS
  • 2010-10 A single-spatial-mode semiconductor laser based on InAs/InGaAs quantum dots with a diffraction filter of optical modes in SEMICONDUCTORS
  • 2010-10 Analysis of mechanisms of carrier emission in the p-i-n structures with In(Ga)As quantum dots in SEMICONDUCTORS
  • 2009-12 Temperature and current dependences of the lasing spectrum’s width of quantum dot lasers in SEMICONDUCTORS
  • 2009-05 Quantum-dot laser diode design optimized to reach the maximum power conversion efficiency in TECHNICAL PHYSICS LETTERS
  • 2009-05 Quantum dot semiconductor lasers of the 1.3 μm wavelength range with high temperature stability of the lasing wavelength (0.2 nm/K) in SEMICONDUCTORS
  • 2007-06-30 Quantum dots for GaAs-based surface emitting lasers at 1300 nm in ADVANCES IN SOLID STATE PHYSICS 40
  • 2006-10 Experimental study of temperature dependence of threshold characteristics in semiconductor VCSELs based on submonolayer InGaAs QDs in SEMICONDUCTORS
  • 2006-09 Room-temperature 1.3-μm lasing in a microdisk with quantum dots in SEMICONDUCTORS
  • 2006-05 VCSELs based on arrays of sub-monolayer InGaAs quantum dots in SEMICONDUCTORS
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