Daniil A Livshits


Ontology type: schema:Person     


Person Info

NAME

Daniil A

SURNAME

Livshits

Publications in SciGraph latest 50 shown

  • 2019-12-23 Record Low Threshold Current Density in Quantum Dot Microdisk Laser in SEMICONDUCTORS
  • 2016-03-31 Microdisk Injection Lasers for the 1.27-μm Spectral Range in SEMICONDUCTORS
  • 2013-12-11 Spectral dependence of the linewidth enhancement factor in quantum dot lasers in SEMICONDUCTORS
  • 2013-10-12 Room-temperature lasing in microring cavities with an InAs/InGaAs quantum-dot active region in SEMICONDUCTORS
  • 2013-09-28 Laser generation in microdisc resonators with InAs/GaAs quantum dots transferred on a silicon substrate in TECHNICAL PHYSICS LETTERS
  • 2012-10-10 Effect of active-region modulation doping on simultaneous ground-state and excited-state lasing in quantum-dot lasers in SEMICONDUCTORS
  • 2012-03-06 High peak power and sub-picosecond Fourier-limited pulse generation from passively mode-locked monolithic two-section gain-guided tapered InGaAs quantum-dot lasers in LASER PHYSICS
  • 2012-02-17 Features of simultaneous ground- and excited-state lasing in quantum dot lasers in SEMICONDUCTORS
  • 2010-11-20 Orange light generation from a PPKTP waveguide end pumped by a cw quantum-dot tunable laser diode in APPLIED PHYSICS B
  • 2010-10-30 High-power passively mode-locked tapered InAs/GaAs quantum-dot lasers in APPLIED PHYSICS B
  • 2010-10-12 A single-spatial-mode semiconductor laser based on InAs/InGaAs quantum dots with a diffraction filter of optical modes in SEMICONDUCTORS
  • 2008-07-30 A narrow-line-width external cavity quantum dot laser for high-resolution spectroscopy in the near-infrared and yellow spectral ranges in APPLIED PHYSICS B
  • 2005-04 Design and fabrication technology for arrays for vertical-cavity surface-emitting lasers in SEMICONDUCTORS
  • 2004-01 High-power single-mode 1.3-μm lasers based on InAs/AlGaAs/GaAs quantum dot heterostructures in TECHNICAL PHYSICS LETTERS
  • 2002-11 High efficiency (ηD>80%) long wavelength (λ>1.25 μm) quantum dot diode lasers on GaAs substrates in SEMICONDUCTORS
  • 2001-03 Record power characteristics of InGaAs/AlGaAs/GaAs heterostructure lasers in SEMICONDUCTORS
  • 2000-10 The properties of InGaAsP/InP heterolasers with step-divergent waveguides in TECHNICAL PHYSICS LETTERS
  • 2000-05 Power conversion efficiency of quantum dot laser diodes in SEMICONDUCTORS
  • 2000-03 Photoluminescent and electroluminescent properties of spontaneously forming periodic InGaAsP structures in SEMICONDUCTORS
  • 2000-01 A spatially single-mode laser for a range of 1.25–1.28 μm on the basis of InAs quantum dots on a GaAs substrate in SEMICONDUCTORS
  • 1999-07 Self-organized nanoscale InP islands in an InGaP/GaAs host and InAs islands in an InGaAs/InP host in SEMICONDUCTORS
  • 1999-06 Quantum-dot injection heterolaser with 3.3 W output power in TECHNICAL PHYSICS LETTERS
  • 1999 Mbe Growth, Structural and Optical Characterization of Inas/Ingaaias Self-Organized Quantum Dots in MRS ADVANCES
  • 1999 MBE Growth and Characterization of Composite InAlAs/In(Ga)As Vertically Aligned Quantum Dots in MRS ADVANCES
  • 1998-08 Self-organized nanosize InP and InAsP clusters obtained by metalorganic compound hydride epitaxy in TECHNICAL PHYSICS LETTERS
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