Anatoly M Strel'Chuk

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Anatoly M



Publications in SciGraph latest 50 shown

  • 2021-03 Erratum to: Characteristics of Schottky Rectifier Diodes Based on Silicon Carbide at Elevated Temperatures in SEMICONDUCTORS
  • 2020-12-04 Characteristics of Schottky Rectifier Diodes Based on Silicon Carbide at Elevated Temperatures in SEMICONDUCTORS
  • 2020-03 Influence of the Proton Irradiation Temperature on the Characteristics of High-Power High-Voltage Silicon Carbide Schottky Diodes in TECHNICAL PHYSICS LETTERS
  • 2020-02 Development of the Processing Technique and Study of Microwave Switches Based on 4H-SiC p–i–n Diodes in TECHNICAL PHYSICS
  • 2019-12-04 Effect of Irradiation with 15-MeV Protons on Low Frequency Noise in Power SiC MOSFETs in SEMICONDUCTORS
  • 2018-12-24 Radiation-Induced Damage of Silicon-Carbide Diodes by High-Energy Particles in SEMICONDUCTORS
  • 2017-11 A study of the effect of electron and proton irradiation on 4H-SiC device structures in TECHNICAL PHYSICS LETTERS
  • 2017-03-16 Effect of the energy of bombarding electrons on the conductivity of n-4H-SiC (CVD) epitaxial layers in SEMICONDUCTORS
  • 2016-02-19 Effect of the fabrication conditions of SiGe LEDs on their luminescence and electrical properties in SEMICONDUCTORS
  • 2015-10-13 Radiation hardness of n-GaN schottky diodes in SEMICONDUCTORS
  • 2014-02-14 Optical and electrical properties of 4H-SiC irradiated with Xe ions in SEMICONDUCTORS
  • 2011-05-15 Low-temperature transport properties of multigraphene films grown on the SiC surface by sublimation in SEMICONDUCTORS
  • 2010-10-12 Electrical characteristics of multigraphene films grown on high-resistivity silicon carbide substrates in SEMICONDUCTORS
  • 2010-06-27 A high-temperature radiation-resistant rectifier based on p+-n junctions in 4H-SiC ion-implanted with aluminum in SEMICONDUCTORS
  • 2004-10 Optical and electrical properties of 4H-SiC irradiated with fast neutrons and high-energy heavy ions in SEMICONDUCTORS
  • 2003-10 Effect of irradiation with fast neutrons on electrical characteristics of devices based on CVD 4H-SiC epitaxial layers in SEMICONDUCTORS
  • 2003-01 Silicon carbide transistor structures as detectors of weakly ionizing radiation in SEMICONDUCTORS
  • 2002-11 Radiation hardness of wide-gap semiconductors (using the example of silicon carbide) in SEMICONDUCTORS
  • 2002-09 Electrical characteristics of (p)3C-SiC-(n)6H-SiC heterojunctions in TECHNICAL PHYSICS LETTERS
  • 2000-09 Radiation defects in n-4H-SiC irradiated with 8-MeV protons in SEMICONDUCTORS
  • 2000-08 Radiation defects in n-6H-SiC irradiated with 8 MeV protons in SEMICONDUCTORS
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