S A Kukushkin


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Person Info

NAME

S A

SURNAME

Kukushkin

Publications in SciGraph latest 50 shown

  • 2018-10 A New Trigonal (Rhombohedral) SiC Phase: Ab Initio Calculations, a Symmetry Analysis and the Raman Spectra in PHYSICS OF THE SOLID STATE
  • 2018-09 Mechanism of Formation of Carbon–Vacancy Structures in Silicon Carbide during Its Growth by Atomic Substitution in PHYSICS OF THE SOLID STATE
  • 2018-09 Structural and elastoplastic properties of β-Ga2O3 films grown on hybrid SiC/Si substrates in CONTINUUM MECHANICS AND THERMODYNAMICS
  • 2018-06 Effect of Chemical Treatment of a Silicon Surface on the Quality and Structure of Silicon-Carbide Epitaxial Films Synthesized by Atom Substitution in SEMICONDUCTORS
  • 2018-05 MBE growth and Structural Properties of InAs and InGaAs Nanowires with Different Mole Fraction of In on Si and Strongly Mismatched SiC/Si(111) Substrates in SEMICONDUCTORS
  • 2018-05 Study of the Anisotropic Elastoplastic Properties of β-Ga2O3 Films Synthesized on SiC/Si Substrates in PHYSICS OF THE SOLID STATE
  • 2018-04 Hybrid GaAs/AlGaAs Nanowire—Quantum dot System for Single Photon Sources in SEMICONDUCTORS
  • 2018-03 Epitaxial Growth of Cadmium Selenide Films on Silicon with a Silicon Carbide Buffer Layer in PHYSICS OF THE SOLID STATE
  • 2017-12 IR spectra of carbon-vacancy clusters in the topochemical transformation of silicon into silicon carbide in PHYSICS OF THE SOLID STATE
  • 2017-11 MBE growth of ultrathin III–V nanowires on a highly mismatched SiC/Si(111) substrate in SEMICONDUCTORS
  • 2017-07 The Gorsky effect in the synthesis of silicon-carbide films from silicon by topochemical substitution of atoms in TECHNICAL PHYSICS LETTERS
  • 2017-06 A quantum-mechanical model of dilatation dipoles in topochemical synthesis of silicon carbide from silicon in PHYSICS OF THE SOLID STATE
  • 2017-05 Photoelectric characteristics of silicon carbide–silicon structures grown by the atomic substitution method in a silicon crystal lattice in SEMICONDUCTORS
  • 2017-05 X-ray reflectometry and simulation of the parameters of SiC epitaxial films on Si(111), grown by the atomic substitution method in PHYSICS OF THE SOLID STATE
  • 2017-04 Structural heteroepitaxy during topochemical transformation of silicon to silicon carbide in PHYSICS OF THE SOLID STATE
  • 2017-04 Misfit dislocation locking and rotation during gallium nitride growth on SiC/Si substrates in PHYSICS OF THE SOLID STATE
  • 2017-03 Separation of III–N/SiC epitaxial heterostructure from a Si substrate and their transfer to other substrate types in SEMICONDUCTORS
  • 2017-02 Epitaxial growth of cadmium telluride films on silicon with a buffer silicon carbide layer in PHYSICS OF THE SOLID STATE
  • 2017-01 Evolution of the symmetry of intermediate phases and their phonon spectra during the topochemical conversion of silicon into silicon carbide in PHYSICS OF THE SOLID STATE
  • 2016-12 Photoemission studies of the vicinal SiC(100) 4° surface and the Cs/SiC(100) 4° interface in TECHNICAL PHYSICS LETTERS
  • 2016-10 Growth and optical properties of filamentary GaN nanocrystals grown on a hybrid SiC/Si(111) substrate by molecular beam epitaxy in PHYSICS OF THE SOLID STATE
  • 2016-10 The C 1s core level spectroscopy of carbon atoms at the surface SiC/Si(111)-4° layer and Cs/SiC/Si(111)-4° interface in SEMICONDUCTORS
  • 2016-09 Epitaxial gallium oxide on a SiC/Si substrate in PHYSICS OF THE SOLID STATE
  • 2016-07 Epitaxial growth of zinc oxide by the method of atomic layer deposition on SiC/Si substrates in PHYSICS OF THE SOLID STATE
  • 2016-06 Molecular dynamics simulation of the indentation of nanoscale films on a substrate in TECHNICAL PHYSICS LETTERS
  • 2016-05 Elastic interaction of point defects in cubic and hexagonal crystals in PHYSICS OF THE SOLID STATE
  • 2016-05 Pyroelectric and piezoelectric responses of thin AlN films epitaxy-grown on a SiC/Si substrate in PHYSICS OF THE SOLID STATE
  • 2016-04 Induced surface states of the ultrathin Ba/3C-SiC(111) interface in SEMICONDUCTORS
  • 2016-04 Phase equilibrium in the formation of silicon carbide by topochemical conversion of silicon in PHYSICS OF THE SOLID STATE
  • 2016-03 Epitaxial growth of cadmium sulfide films on silicon in PHYSICS OF THE SOLID STATE
  • 2016-02 Determining polytype composition of silicon carbide films by UV ellipsometry in TECHNICAL PHYSICS LETTERS
  • 2015-12 Stability of the surface of an elastically strained multicomponent film in a system with chemical reactions in PHYSICS OF THE SOLID STATE
  • 2015-12 Infrared spectroscopy of silicon carbide layers synthesized by the substitution of atoms on the surface of single-crystal silicon in PHYSICS OF THE SOLID STATE
  • 2015-11 Evolution of the morphology of diamond particles and mechanism of their growth during the synthesis by chemical vapor deposition in PHYSICS OF THE SOLID STATE
  • 2015-10 Effect of the nand p-type Si(100) substrates with a SiC buffer layer on the growth mechanism and structure of epitaxial layers of semipolar AlN and GaN in PHYSICS OF THE SOLID STATE
  • 2015-09 Growth and structure of GaN layers on silicon carbide synthesized on a Si substrate by the substitution of atoms: A model of the formation of V-defects during the growth of GaN in PHYSICS OF THE SOLID STATE
  • 2015-04 Role of elastic energy in the formation of ferroelectric barium strontium titanate films on sapphire in PHYSICS OF THE SOLID STATE
  • 2015-03 The equilibrium state in the Si-O-C ternary system during SiC growth by chemical substitution of atoms in TECHNICAL PHYSICS LETTERS
  • 2015-01 Pore- and delamination-induced mismatch strain relaxation and conditions for the formation of dislocations, cracks, and buckles in the epitaxial AlN(0001)/SiC/Si(111) heterostructure in PHYSICS OF THE SOLID STATE
  • 2014-12 Nanoindentation and deformation properties of nanoscale silicon carbide films on silicon substrate in TECHNICAL PHYSICS LETTERS
  • 2014-12 Morphological stability criterion for a spherical crystallization front in a multicomponent system with chemical reactions in PHYSICS OF THE SOLID STATE
  • 2014-08 Synthesis of epitaxial silicon carbide films through the substitution of atoms in the silicon crystal lattice: A review in PHYSICS OF THE SOLID STATE
  • 2014-05 Epitaxy of semipolar GaN on a Si(001) substrate with a SiC buffer layer in TECHNICAL PHYSICS LETTERS
  • 2014-04 First-order phase transition through an intermediate state in PHYSICS OF THE SOLID STATE
  • 2014-01 Epitaxial silicon carbide on a 6″ silicon wafer in TECHNICAL PHYSICS LETTERS
  • 2013-12 Anisotropy of the solid-state epitaxy of silicon carbide in silicon in SEMICONDUCTORS
  • 2013-11 Sequential structural characterization of layers in the GaN/AlN/SiC/Si(111) system by X-ray diffraction upon every growth stage in TECHNICAL PHYSICS LETTERS
  • 2013-07 Elastic interaction of point defects in crystals with cubic symmetry in MECHANICS OF SOLIDS
  • 2013-05 Carrier mobility in undoped SiC layers grown on silicon by a new epitaxial technique in TECHNICAL PHYSICS LETTERS
  • 2013-03 Epitaxy of gallium nitride in semi-polar direction on Si(210) substrate in TECHNICAL PHYSICS LETTERS
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