M A Putyato


Ontology type: schema:Person     


Person Info

NAME

M A

SURNAME

Putyato

Publications in SciGraph latest 50 shown

  • 2011-07 Yb3+:KY(WO4)2 laser with a fast saturable absorber in LASER PHYSICS
  • 2010-05 Semiconductor nanostructures modified by the UV laser radiation in LASER PHYSICS
  • 2009-02 Reflective interferometer for investigation of the amplitude-phase characteristics of semiconductor nanostructures in BULLETIN OF THE RUSSIAN ACADEMY OF SCIENCES: PHYSICS
  • 2009-02 Self-mode-locking of the Nd3+:KGd(WO4)2 laser using a multifunctional semiconductor mirror in LASER PHYSICS
  • 2008-09 Influence of the structural surface state on the formation of a relief and morphology of GaAs(001) layers during molecular-beam epitaxy and vacuum annealing in RUSSIAN PHYSICS JOURNAL
  • 2008-05 Reflectivity kinetics in the vicinity of exciton transitions in semiconductor nanostructures in BULLETIN OF THE RUSSIAN ACADEMY OF SCIENCES: PHYSICS
  • 2007-04 Coherent control of transient optical phenomena: Molecules, atoms, and nanostructures in LASER PHYSICS
  • 2007-04 A new technique to measure the phase characteristics of laser mirrors based on semiconductor heterostructures in LASER PHYSICS
  • 2006-07 Effect of isovalent doping with phosphorus on the cluster formation in gallium arsenide grown by molecular-beam epitaxy at a relatively low temperature in SEMICONDUCTORS
  • 2005-09 Electron traps in thin layers of low-temperature-grown gallium arsenide with As-Sb nanoclusters in SEMICONDUCTORS
  • 2005-01 A study of recombination centers related to As-Sb nanoclusters in low-temperature grown gallium arsenide in SEMICONDUCTORS
  • 2004-04 Capacitance study of electron traps in low-temperature-grown GaAs in SEMICONDUCTORS
  • 2004-01 Defect formation in LT MBE InGaAs and GaAs in JOURNAL OF STRUCTURAL CHEMISTRY
  • 2004-01 Excess arsenic and point defects in GaAS grown by molecular beam epitaxy at low temperatures in JOURNAL OF STRUCTURAL CHEMISTRY
  • 2003-09 Effect of growth conditions on incorporation of Si into Ga and As sublattices of GaAs during molecular-beam epitaxy in SEMICONDUCTORS
  • 2002-09 Doping of GaAs layers with Si under conditions of low-temperature molecular beam epitaxy in SEMICONDUCTORS
  • 2002-08 Measurements of parameters of the low-temperature molecular-beam epitaxy of GaAs in SEMICONDUCTORS
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