R V Levin


Ontology type: schema:Person     


Person Info

NAME

R V

SURNAME

Levin

Publications in SciGraph latest 50 shown

  • 2021-11 Silicon-Doped GaSb Grown by MOVPE in a Wide Range of the V/III Ratio in SEMICONDUCTORS
  • 2020-12 Smoothing the Surface of Gallium Antimonide in TECHNICAL PHYSICS LETTERS
  • 2020-10 Investigation of the Effect of Doping on Transition Layers of Anisotype GaInAsP and InP Heterostructures Obtained by the Method of MOCVD in TECHNICAL PHYSICS LETTERS
  • 2019-12-04 High-Resistivity Gallium Antimonide Produced by Metal–Organic Vapor-Phase Epitaxy in SEMICONDUCTORS
  • 2019-12 Optical Properties of Short-Period InAs/GaSb Superlattices Grown by MOCVD in SEMICONDUCTORS
  • 2019-11-06 Investigation of Composition Uniformity in Thickness of GaInAsP Layers Grown on InP Substrates by Vapor-Phase Epitaxy in SEMICONDUCTORS
  • 2019-10-14 Examination of the Capabilities of Metalorganic Vapor-Phase Epitaxy in Fabrication of Thin InAs/GaSb Layers in TECHNICAL PHYSICS
  • 2019-10 Luminescence Properties of GaInAsP Layers with Graded Composition–Depth Profiles Grown on InP Substrates in TECHNICAL PHYSICS LETTERS
  • 2019-02 On the Possibility of Manufacturing Strained InAs/GaSb Superlattices by the MOCVD Method in SEMICONDUCTORS
  • 2019-01 Electroluminescence in n-GaSb/InAs/p-GaSb Heterostructures with a Single Quantum Well Grown by MOVPE in SEMICONDUCTORS
  • 2018-12-24 GaInAsP/InP-Based Laser Power Converters (λ = 1064 nm) in SEMICONDUCTORS
  • 2018-12 Manufacture and Study of Switch p–n-Junctions for Cascade Photovoltaic Cells in TECHNICAL PHYSICS LETTERS
  • 2018-12 A Study of the Composition Gradient of GaInAsP Layers Formed on InP by Vapor-Phase Epitaxy in TECHNICAL PHYSICS LETTERS
  • 2018-07-06 Photoconductivity Amplification in a Type-II n-GaSb/InAs/p-GaSb Heterostructure with a Single QW in SEMICONDUCTORS
  • 2018-04-03 Enhancement of Photoconductivity by Carrier Screening Effect in n-GaSb/InAs/p-GaSb Heterostructure with Single Deep Quantum Well in SEMICONDUCTORS
  • 2017-10 A study of transition regions in InAsPSb/InAs heterostructures grown by MOVPE in TECHNICAL PHYSICS LETTERS
  • 2017-01 Stress relaxation in InGaAsP/InP heterostructures for 1064-nm laser radiation converters in TECHNICAL PHYSICS LETTERS
  • 2016-10-11 GaSb laser-power (λ = 1550 nm) converters: Fabrication method and characteristics in SEMICONDUCTORS
  • 2016-01 InAs/GaSb superlattices fabricated by metalorganic chemical vapor deposition in TECHNICAL PHYSICS LETTERS
  • 2015-05-06 Photovoltaic converters of concentrated sunlight, based on InGaAsP(1.0 eV)/InP heterostructures in SEMICONDUCTORS
  • 2014-08-06 Study of postgrowth processing in the fabrication of quantum-cascade lasers in SEMICONDUCTORS
  • 2013-12-11 Fabrication and study of p-n structures with crystalline inclusions in the space-charge region in SEMICONDUCTORS
  • 2012-05 Properties of narrow-bandgap (0.3–0.48 eV) A3B5 solid solution epilayers grown by metal-organic chemical vapor deposition in TECHNICAL PHYSICS LETTERS
  • 2006-12 Properties of the GaSb epitaxial layers obtained by the MOCVD method in SEMICONDUCTORS
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