Yu G Musikhin


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Person Info

NAME

Yu G

SURNAME

Musikhin

Publications in SciGraph latest 50 shown

  • 2012-10 InGaN/GaN heterostructures grown by submonolayer deposition in SEMICONDUCTORS
  • 2011-02 Influence of hydrogen on local phase separation in InGaN thin layers and properties of light-emitting structures based on them in SEMICONDUCTORS
  • 2007-07 Metamorphic InAs quantum dots: Photoluminescence features related to cooperative phenomena in the quantum dot-matrix system in TECHNICAL PHYSICS LETTERS
  • 2007-06-30 Quantum dots for GaAs-based surface emitting lasers at 1300 nm in ADVANCES IN SOLID STATE PHYSICS 40
  • 2007-05 Nonequilibrium population of charge carriers in structures with InGaN deep quantum dots in SEMICONDUCTORS
  • 2006-07 Effect of isovalent doping with phosphorus on the cluster formation in gallium arsenide grown by molecular-beam epitaxy at a relatively low temperature in SEMICONDUCTORS
  • 2006-06 An X-ray diffraction and electron-microscopic study of the influence of gamma radiation on multilayer AlGaAs/InGaAs/GaAs heterostructures in SEMICONDUCTORS
  • 2006-03 Coupling of electron states in the InAs/GaAs quantum dot molecule in SEMICONDUCTORS
  • 2006-03 InAs/InGaNAs/GaNAs QW and QD heterostructures emitting at 1.4–1.8 μm in SEMICONDUCTORS
  • 2005-07 The transition from thermodynamically to kinetically controlled formation of quantum dots in an InAs/GaAs(100) system in SEMICONDUCTORS
  • 2005-01 A study of recombination centers related to As-Sb nanoclusters in low-temperature grown gallium arsenide in SEMICONDUCTORS
  • 2005-01 Localization of holes in an InAs/GaAs quantum-dot molecule in SEMICONDUCTORS
  • 2004-07 Optical and structural properties of InAs quantum dot arrays grown in an InxGa1−xAs matrix on a GaAs substrate in SEMICONDUCTORS
  • 2004-06 High-power 1.5 µm InAs-InGaAs quantum dot lasers on GaAs substrates in SEMICONDUCTORS
  • 2004-04 Capacitance study of electron traps in low-temperature-grown GaAs in SEMICONDUCTORS
  • 2004-04 Carrier density profile in weakly coupled GaAs/AlGaAs superlattices in SEMICONDUCTORS
  • 2004-03 Dependence of structural and optical properties of QD arrays in an InAs/GaAs system on surface temperature and growth rate in SEMICONDUCTORS
  • 2003-09 Metamorphic lasers for 1.3-µm spectral range grown on GaAs substrates by MBE in SEMICONDUCTORS
  • 2003-09 Metamorphic modulation-doped InAlAs/InGaAs/InAlAs heterostructures with high electron mobility grown on gaas substrates in SEMICONDUCTORS
  • 2003-07 Control over the parameters of InAs-GaAs quantum dot arrays in the Stranski-Krastanow growth mode in SEMICONDUCTORS
  • 2003-05 Structural and optical properties of InAs quantum dots in AlGaAs matrix in SEMICONDUCTORS
  • 2002-11 Long-wavelength quantum-dot lasers in JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS
  • 2002-09 Stark effect in vertically coupled quantum dots in InAs-GaAs heterostructures in SEMICONDUCTORS
  • 2001-08 Anisotropy of the spatial distribution of In(Ga)As quantum dots in In(Ga)As-GaAs multilayer heterostructures studied by X-ray and synchrotron diffraction and transmission electron microscopy in SEMICONDUCTORS
  • 2001 Reversibility of the Island Shape, Volume and Density in Stranski-Krastanow Growth in PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS PART I
  • 2001 Formation of GaAsN nanoinsertions in a GaN matrix in PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS PART I
  • 2000-11 The emission from the structures with arrays of coupled quantum dots grown by the submonolayer epitaxy in the spectral range of 1.3–1.4 µm in SEMICONDUCTORS
  • 2000-08 TEM structural studies of undoped and Si-doped GaN grown on Al2O3 substrate in SEMICONDUCTORS
  • 2000-05 InGaAs-GaAs quantum dots for application in long wavelength (1.3 µm) resonant vertical cavity enhanced devices in JOURNAL OF ELECTRONIC MATERIALS
  • 2000-04 Lasing in the vertical direction in InGaN/GaN/AlGaN structures with InGaN quantum dots in SEMICONDUCTORS
  • 2000-03 Mechanisms of InGaAlAs solid solution decomposition stimulated by InAs quantum dots in SEMICONDUCTORS
  • 1999-08 Long-wavelength emission in structures with quantum dots formed in the stimulated decomposition of a solid solution at strained islands in SEMICONDUCTORS
  • 1999-08 Structure and properties of InGaAs layers grown by low-temperature molecular-beam epitaxy in SEMICONDUCTORS
  • 1999-08 Formation of two-dimensional islands in the deposition of ultrathin InSb layers on a GaSb surface in SEMICONDUCTORS
  • 1999-05 Emission of electrons from the ground and first excited states of self-organized InAs/GaAs quantum dot structures in JOURNAL OF ELECTRONIC MATERIALS
  • 1999-02 Capacitance spectroscopy of deep states in InAs/GaAs quantum dot heterostructures in SEMICONDUCTORS
  • 1999-02 Photo-and electroluminescence in the 1.3-µm wavelength range from quantum-dot structures grown on GaAs substrates in SEMICONDUCTORS
  • 1998-10 Arsenic cluster superlattice in gallium arsenide grown by low-temperature molecular-beam epitaxy in SEMICONDUCTORS
  • 1998-07 Indium layers in low-temperature gallium arsenide: Structure and how it changes under annealing in the temperature range 500–700 °C in SEMICONDUCTORS
  • 1998-06 Self-organizing nanoheterostructures in InGaAsP solid solutions in SEMICONDUCTORS
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