Alexey S Vlasov


Ontology type: schema:Person     


Person Info

NAME

Alexey S

SURNAME

Vlasov

Publications in SciGraph latest 50 shown

  • 2020-12 Smoothing the Surface of Gallium Antimonide in TECHNICAL PHYSICS LETTERS
  • 2019-12-04 High-Resistivity Gallium Antimonide Produced by Metal–Organic Vapor-Phase Epitaxy in SEMICONDUCTORS
  • 2019-12-04 Ga(In)AsP Lateral Nanostructures as the Optical Component of GaAs-Based Photovoltaic Converters in SEMICONDUCTORS
  • 2019-11-06 Investigation of Composition Uniformity in Thickness of GaInAsP Layers Grown on InP Substrates by Vapor-Phase Epitaxy in SEMICONDUCTORS
  • 2019-10 Luminescence Properties of GaInAsP Layers with Graded Composition–Depth Profiles Grown on InP Substrates in TECHNICAL PHYSICS LETTERS
  • 2018-12-27 Low Threshold Lasing in InP/GaInP Quantum Dot Microdisks in SEMICONDUCTORS
  • 2018-12-24 AlGaAs/GaAs Photovoltaic Converters of Tritium Radioluminescent-Lamp Radiation in SEMICONDUCTORS
  • 2018-12 A Study of Ohmic Contacts of Power Photovoltaic Converters in TECHNICAL PHYSICS LETTERS
  • 2018-09-06 Nanostructure Growth in the Ga(In)AsP–GaAs System under Quasi-Equilibrium Conditions in SEMICONDUCTORS
  • 2018-04-03 Density Control of InP/GaInP Quantum Dots Grown by Metal-Organic Vapor-Phase Epitaxy in SEMICONDUCTORS
  • 2018-04-03 Wigner Localization and Whispering Gallery Modes of Electrons in Quantum Dots in SEMICONDUCTORS
  • 2017-07-25 Model calculating high-speed collisions between bodies with different shapes and massive metallic obstacles in TECHNICAL PHYSICS
  • 2017-07-25 Lasing in microdisks with an active region based on lattice-matched InP/AlInAs nanostructures in TECHNICAL PHYSICS
  • 2017-05-18 Modification of the surface of GaAs and observation of surface enhanced Raman scattering after the diffusion of indium in SEMICONDUCTORS
  • 2017-05-18 Formation of a p-type emitter with the involvement of surfactants in GaAs photoelectric converters in SEMICONDUCTORS
  • 2016-11-15 High-rate deformation of nanocrystalline iron and copper in TECHNICAL PHYSICS
  • 2015-08-02 Site-Controlled Growth of Single InP QDs in SEMICONDUCTORS
  • 2013-07-14 Spectral-splitting concentrator photovoltaic modules based on AlGaAs/GaAs/GaSb and GaInP/InGaAs(P) solar cells in TECHNICAL PHYSICS
  • 2013-03 High-speed jet group penetration into brittle materials in TECHNICAL PHYSICS LETTERS
  • 2011-06-18 High-efficiency (η = 39.6%, AM 1.5D) cascade of photoconverters in solar splitting systems in SEMICONDUCTORS
  • 2010-09-29 Gas-fired thermophotovoltaic generator based on metallic emitters and GaSb cells in SEMICONDUCTORS
  • 2010-02 Thermophotovoltaic generators based on gallium antimonide in SEMICONDUCTORS
  • 2010-02 Highly efficient photovoltaic cells based on In0.53Ga0.47 as alloys with isovalent doping in SEMICONDUCTORS
  • 2008-09-30 Examination of properties of epitaxial and bulk gallium antimonide in SEMICONDUCTORS
  • 2006-12 Properties of the GaSb epitaxial layers obtained by the MOCVD method in SEMICONDUCTORS
  • 2006-03 Thermophotovoltaic cells based on In0.53Ga0.47As/InP heterostructures in SEMICONDUCTORS
  • 2005-01 Near-field photoluminescence spectroscopy of InGaN quantum dots. in MRS ADVANCES
  • 2004-05 High-rate penetration of a striker into SiC ceramic with different void content in TECHNICAL PHYSICS
  • 2003 Near-Field Magneto-Photoluminescence of Singe Self-Organized Quantum Dots. in MRS ADVANCES
  • 2003 Near-Field Magneto-Photoluminescence of Singe Self-Organized Quantum Dots. in MRS ADVANCES
  • 2003 Near-Field Magneto-Photoluminescence of Singe Self-Organized Quantum Dots. in MRS ADVANCES
  • 2002-05 Behavior of Strengthened Glass under High-Velocity Impact in STRENGTH OF MATERIALS
  • 2002 Local Strain Effects in Near-Field Spectra of Single Semiconductor Quantum Dots. in MRS ADVANCES
  • 2002 Mechanical Interaction in Near-Field Spectroscopy of single Semiconductor Quantum Dots. in MRS ADVANCES
  • 2001 Near-field photoluminescence spectroscopy of localized states in InGaAsN alloys in MRS ADVANCES
  • 2000 Strong Photon-Exciton Coupling in the Near-Field Luminescence of Semiconductor Quantum Dots in MRS ADVANCES
  • 1999-10 Kinetics of high-velocity penetration into high-hardness brittle media in PHYSICS OF THE SOLID STATE
  • 1999 Disorder Induced IR Anomaly in Hexagonal AlGaN Short-Period Superlattices and Alloys in MRS ADVANCES
  • 1997-02 Some features of the kinetics of high-speed penetration in brittle media in TECHNICAL PHYSICS LETTERS
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