Mary Ellen Zvanut

Ontology type: schema:Person     

Person Info


Mary Ellen



Publications in SciGraph latest 50 shown

  • 2016-06 Incorporation of Mg in Free-Standing HVPE GaN Substrates in JOURNAL OF ELECTRONIC MATERIALS
  • 2015-11 Reduction in the Number of Mg Acceptors with Al Concentration in AlxGa1−xN in JOURNAL OF ELECTRONIC MATERIALS
  • 2010 Electron Paramagnetic Resonance Characterization of Point Defects in SPRINGER HANDBOOK OF CRYSTAL GROWTH
  • 2009-12 High-Field Phenomena of Qubits in APPLIED MAGNETIC RESONANCE
  • 2008-09 A study of vacancies and vacancy pair defects in 4H SiC grown by halide chemical vapor deposition in JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS
  • 2007-06 A Study of Deep Defect Levels in Semi-Insulating SiC Using Optical Admittance Spectroscopy in JOURNAL OF ELECTRONIC MATERIALS
  • 2005-01 The effects of oxygen, nitrogen, and hydrogen annealing on Mg acceptors in GaN as monitored by electron paramagnetic resonance spectroscopy in JOURNAL OF ELECTRONIC MATERIALS
  • 2003-05 Effects of high-temperature annealing on defects and impurities in As-grown semi-insulating 4H SiC in JOURNAL OF ELECTRONIC MATERIALS
  • 2002-05 Interactions between intrinsic defects and nitrogen/boron impurities in high-resistivity 4H SiC: Electron paramagnetic resonance study in JOURNAL OF ELECTRONIC MATERIALS
  • 2000-03 HF chemical etching of SiO2 on 4H and 6H SiC in JOURNAL OF ELECTRONIC MATERIALS
  • 1999-03 Generation and annealing characteristics of paramagnetic centers in oxidized 3C-SiC and 6H-SiC in JOURNAL OF ELECTRONIC MATERIALS
  • 1998-07 Near-interface trapped charge induced by Fowler-Nordheim injection in hydrogen or argon annealed MOS capacitors in JOURNAL OF ELECTRONIC MATERIALS
  • 1993 Hydrogen-Related E’ Centers and Positive Charge in Irradiated Oxide Films in THE PHYSICS AND CHEMISTRY OF SIO2 AND THE SI-SIO2 INTERFACE 2
  • Affiliations

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