М В Maksimov


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Person Info

NAME

М В

SURNAME

Maksimov

Publications in SciGraph latest 50 shown

  • 2018-08 Power Characteristics and Temperature Dependence of the Angular Beam Divergence of Lasers with a Near-Surface Active Region in TECHNICAL PHYSICS LETTERS
  • 2012-10 Device characteristics of long-wavelength lasers based on self-organized quantum dots in SEMICONDUCTORS
  • 2012-10 Effect of active-region modulation doping on simultaneous ground-state and excited-state lasing in quantum-dot lasers in SEMICONDUCTORS
  • 2012-02 Decreasing parasitic capacitance in vertical-cavity surface-emitting laser with selectively oxidized aperture in TECHNICAL PHYSICS LETTERS
  • 2012-02 Interaction of polarized light with comb-shaped metal-coated nanostructures in TECHNICAL PHYSICS LETTERS
  • 2008-12 High-gain injection quantum-dot lasers operating at wavelengths above 1300 nm in TECHNICAL PHYSICS LETTERS
  • 2008-10 Effect of excitation level on the optical properties of GaAs/AlGaO microdisks with an active region containing InAs quantum dots in SEMICONDUCTORS
  • 2007-10 The use of spatially ordered arrays of etched holes for fabrication of single-mode vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots in SEMICONDUCTORS
  • 2007-01 Anomalous dynamic characteristics of semiconductor quantum-dot lasers generating on two quantum states in TECHNICAL PHYSICS LETTERS
  • 2006-07 Optical studies of a two-dimensional photonic crystal with the InAs/InGaAs quantum-dot structure as an active region in SEMICONDUCTORS
  • 2006-01 Photocurrent in self-organized InAs quantum dots in 1.3 μm InAs/InGaAs/GaAs semiconductor laser heterostructures in SEMICONDUCTORS
  • 2005-10 Nonequilibrium room-temperature carrier distribution in InAs quantum dots overgrown with thin AlAs/InAlAs layers in SEMICONDUCTORS
  • 2005-08 Fabrication of semiconductor-and polymer-based photonic crystals using nanoimprint lithography in TECHNICAL PHYSICS
  • 2005-07 Stresses in selectively oxidized GaAs/(AlGa)xOy structures in SEMICONDUCTORS
  • 2005-04 Temperature dependence of the effective coefficient of Auger recombination in 1.3 μm InAs/GaAs QD lasers in SEMICONDUCTORS
  • 2005-04 Design and fabrication technology for arrays for vertical-cavity surface-emitting lasers in SEMICONDUCTORS
  • 2005-04 Effect of p-doping of the active region on the temperature stability of InAs/GaAs QD lasers in SEMICONDUCTORS
  • 2005-02 Process of fabricating semiconductor microcavities and photon crystals in TECHNICAL PHYSICS
  • 2004-10 Effect of nonradiative recombination centers on photoluminescence efficiency in quantum dot structures in SEMICONDUCTORS
  • 2004-08 Lasing wavelength of quantum dot heterostructures controlled within the 1.3–0.85 μm range by means of high-temperature annealing in TECHNICAL PHYSICS LETTERS
  • 2004-07 Optical and structural properties of InAs quantum dot arrays grown in an InxGa1−xAs matrix on a GaAs substrate in SEMICONDUCTORS
  • 2004-06 High-power 1.5 µm InAs-InGaAs quantum dot lasers on GaAs substrates in SEMICONDUCTORS
  • 2003-10 Temperature characteristics of low-threshold high-efficiency quantum-dot lasers with the emission wavelength from 1.25 to 1.29 µm in SEMICONDUCTORS
  • 2003-09 Metamorphic lasers for 1.3-µm spectral range grown on GaAs substrates by MBE in SEMICONDUCTORS
  • 2003-07 Control over the parameters of InAs-GaAs quantum dot arrays in the Stranski-Krastanow growth mode in SEMICONDUCTORS
  • 2003-05 Longwave generation in laser structures based on InGaAs(N) quantum wells on GaAs substrates in TECHNICAL PHYSICS LETTERS
  • 2003-01 Long-term stability of long-wavelength (>1.25 µm) quantum-dot lasers fabricated on GaAs substrates in TECHNICAL PHYSICS
  • 2002-11 High efficiency (ηD>80%) long wavelength (λ>1.25 μm) quantum dot diode lasers on GaAs substrates in SEMICONDUCTORS
  • 2002-09 The influence of heat treatment conditions on the evaporation of defect regions in structures with InGaAs quantum dots in the GaAs matrix in SEMICONDUCTORS
  • 2000-03 Mechanisms of InGaAlAs solid solution decomposition stimulated by InAs quantum dots in SEMICONDUCTORS
  • 2000-01 A spatially single-mode laser for a range of 1.25–1.28 μm on the basis of InAs quantum dots on a GaAs substrate in SEMICONDUCTORS
  • 1999-09 Gain characteristics of quantum-dot injection lasers in SEMICONDUCTORS
  • 1999-08 Long-wavelength emission in structures with quantum dots formed in the stimulated decomposition of a solid solution at strained islands in SEMICONDUCTORS
  • 1999-08 Formation of two-dimensional islands in the deposition of ultrathin InSb layers on a GaSb surface in SEMICONDUCTORS
  • 1999-08 Lasing at a wavelength close to 1.3 µm in InAs quantum-dot structures in SEMICONDUCTORS
  • 1999-07 Investigation of MOVPE-grown GaN layers doped with As atoms in SEMICONDUCTORS
  • 1999-06 Quantum-dot injection heterolaser with 3.3 W output power in TECHNICAL PHYSICS LETTERS
  • 1999-04 Exciton waveguide and lasing in structures with superfine GaAs quantum wells and InAs submonolayer inclusions in an AlGaAs host in SEMICONDUCTORS
  • 1999-02 Photo-and electroluminescence in the 1.3-µm wavelength range from quantum-dot structures grown on GaAs substrates in SEMICONDUCTORS
  • 1999-02 Gain in injection lasers based on self-organized quantum dots in SEMICONDUCTORS
  • 1999-02 Influence of growth conditions on the formation and luminescence properties of InGaAs quantum dots in a Si matrix in SEMICONDUCTORS
  • 1999-01 Influence of composition and anneal conditions on the optical properties of (In, Ga)As quantum dots in an (Al, Ga)As matrix in SEMICONDUCTORS
  • 1998-09 Effect of the quantum-dot surface density in the active region on injection-laser characteristics in SEMICONDUCTORS
  • 1998-08 Spontaneous long-wavelength interlevel emission in quantum-dot laser structures in TECHNICAL PHYSICS LETTERS
  • 1998-07 Lasing in submonolayer InAs/AlGaAs structures without external optical confinement in TECHNICAL PHYSICS LETTERS
  • 1998-05 Operating characteristics and their anisotropy in a high-power laser (1.5 W, 300 K) with a quantum-dot active region in TECHNICAL PHYSICS LETTERS
  • 1998-01 Low-threshold quantum-dot injection heterolaser emitting at 1.84 μm in TECHNICAL PHYSICS LETTERS
  • 1998-01 Formation of InAs quantum dots in a GaAs matrix during growth on misoriented substrates in SEMICONDUCTORS
  • 1998 Optical Switches and Modulators for Integrated Optoelectronic Systems in ADVANCED ELECTRONIC TECHNOLOGIES AND SYSTEMS BASED ON LOW-DIMENSIONAL QUANTUM DEVICES
  • 1998 Modelling Quantum Well Laser Diode Structures in ADVANCED ELECTRONIC TECHNOLOGIES AND SYSTEMS BASED ON LOW-DIMENSIONAL QUANTUM DEVICES
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