Nikolay A Kalyuzhnyy

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Nikolay A



Publications in SciGraph latest 50 shown

  • 2021-03 Effect of the Active Region and Waveguide Design on the Performance of Edge-Emitting Lasers Based on InGaAs/GaAs Quantum Well-Dots in SEMICONDUCTORS
  • 2020-10-19 Laser Power Converter Modules with a Wavelength of 809–850 nm in TECHNICAL PHYSICS
  • 2020-10-09 Comparative Analysis of the Optical and Physical Properties of InAs and In0.8Ga0.2As Quantum Dots and Solar Cells Based on them in SEMICONDUCTORS
  • 2020-07 A Micro Optocoupler Based on a Microdisk Laser and a Photodetector with an Active Region Based on Quantum Well-Dots in TECHNICAL PHYSICS LETTERS
  • 2020-06-03 Ultimate Lasing Temperature of Microdisk Lasers in SEMICONDUCTORS
  • 2020-04-28 Effects of Doping of Bragg Reflector Layers on the Electrical Characteristics of InGaAs/GaAs Metamorphic Photovoltaic Converters in SEMICONDUCTORS
  • 2019-12-23 Capacitive Characteristics of High-Speed Photovoltaic Converters at Combined Lighting in SEMICONDUCTORS
  • 2019-11-06 Time-Resolved Photoluminescence of InGaAs Nanostructures Different in Quantum Dimensionality in SEMICONDUCTORS
  • 2019-11-06 Counteracting the Photovoltaic Effect in the Top Intergenerator Part of GaInP/GaAs/Ge Solar Cells in SEMICONDUCTORS
  • 2019-11 Anomalies in Photovoltaic Characteristics of Multijunction Solar Cells at Ultrahigh Solar Light Concentrations in TECHNICAL PHYSICS LETTERS
  • 2019-08-07 Evaluation of the Impact of Surface Recombination in Microdisk Lasers by Means of High-Frequency Modulation in SEMICONDUCTORS
  • 2019-08-07 Module of Laser-Radiation (λ = 1064 nm) Photovoltaic Converters in SEMICONDUCTORS
  • 2019-02 Lasers Based on Quantum Well-Dots Emitting in the 980- and 1080-nm Optical Ranges in TECHNICAL PHYSICS LETTERS
  • 2018-12-27 Diode Lasers with Near-Surface Active Region in SEMICONDUCTORS
  • 2018-10-18 Reduction of Internal Loss and Thermal Resistance in Diode Lasers with Coupled Waveguides in SEMICONDUCTORS
  • 2018-10 Optical Properties of InGaAs/InAlAs Metamorphic Nanoheterostructures for Photovoltaic Converters of Laser and Solar Radiation in TECHNICAL PHYSICS LETTERS
  • 2018-09-06 Recombination in GaAs p–i–n Structures with InGaAs Quantum-Confined Objects: Modeling and Regularities in SEMICONDUCTORS
  • 2018-09-06 Multilayer Quantum Well–Dot InGaAs Heterostructures in GaAs-based Photovoltaic Converters in SEMICONDUCTORS
  • 2018-06-07 In0.8Ga0.2As Quantum Dots for GaAs Solar Cells: Metal-Organic Vapor-Phase Epitaxy Growth Peculiarities and Properties in SEMICONDUCTORS
  • 2018-04-03 Density Control of InP/GaInP Quantum Dots Grown by Metal-Organic Vapor-Phase Epitaxy in SEMICONDUCTORS
  • 2018-01 Bimodality in Arrays of In0.4Ga0.6As Hybrid Quantum-Confined Heterostructures Grown on GaAs Substrates in SEMICONDUCTORS
  • 2017-05-18 InAs QDs in a metamorphic In0.25Ga0.75As matrix, grown by MOCVD in SEMICONDUCTORS
  • 2017-03-16 Optical properties of hybrid quantum-well–dots nanostructures grown by MOCVD in SEMICONDUCTORS
  • 2017-01 Optimization of structural and growth parameters of metamorphic InGaAs photovoltaic converters grown by MOCVD in SEMICONDUCTORS
  • 2016-09-16 Optical properties of hybrid quantum-confined structures with high absorbance in SEMICONDUCTORS
  • 2016-09-16 Photovoltaic laser-power converter based on AlGaAs/GaAs heterostructures in SEMICONDUCTORS
  • 2016-07-06 On current spreading in solar cells: a two-parameter tube model in SEMICONDUCTORS
  • 2016-04 Heterostructures of metamorphic GaInAs photovoltaic converters fabricated by MOCVD on GaAs substrates in SEMICONDUCTORS
  • 2015-08-02 Site-Controlled Growth of Single InP QDs in SEMICONDUCTORS
  • 2015-08-02 Effect of the interaction conditions of the probe of an atomic-force microscope with the n-GaAs surface on the triboelectrization phenomenon in SEMICONDUCTORS
  • 2015-08-02 Effect of the bimodality of a QD array on the optical properties and threshold characteristics of QD lasers in SEMICONDUCTORS
  • 2015-08-02 Determination of the technological growth parameters in the InAs-GaAs system for the MOCVD synthesis of “Multimodal” InAs QDs in SEMICONDUCTORS
  • 2015-05-06 Estimation of the potential efficiency of a multijunction solar cell at a limit balance of photogenerated currents in SEMICONDUCTORS
  • 2014-05-07 Subtractive method for obtaining the dark current-voltage characteristic and its types for the residual (nongenerating) part of a multi-junction solar cell in SEMICONDUCTORS
  • 2013-10-16 Interfaces in III–V High Efficiency Solar Cells in HIGH-EFFICIENCY SOLAR CELLS
  • 2013-09-05 Local triboelectrification of an n-GaAs surface using the tip of an atomic-force microscope in SEMICONDUCTORS
  • 2013-03-08 Picosecond internal Q-switching mode correlates with laser diode breakdown voltage in SEMICONDUCTORS
  • 2010-11-19 Germanium subcells for multijunction GaInP/GaInAs/Ge solar cells in SEMICONDUCTORS
  • 2010-08-18 Study of minority carrier diffusion lengths in photoactive layers of multijunction solar cells in SEMICONDUCTORS
  • 2009-10-10 Properties of interfaces in GaInP solar cells in SEMICONDUCTORS
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