Irina V Sedova

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Irina V



Publications in SciGraph latest 50 shown

  • 2021-09 Photoconductivity and Infrared-Light Absorption in p-GaAs/AlGaAs Quantum Wells in SEMICONDUCTORS
  • 2020-12 Sulfide Passivation of InP(100) Surface in SEMICONDUCTORS
  • 2020-10-09 Investigation of Built-in Electric Fields at the GaSe/GaAs Interface by Photoreflectance Spectroscopy in SEMICONDUCTORS
  • 2019-08-07 Molecular-Beam Epitaxy of Two-Dimensional GaSe Layers on GaAs(001) and GaAs(112) Substrates: Structural and Optical Properties in SEMICONDUCTORS
  • 2019-07-02 Development of the Physicochemical Properties of the GaSb(100) Surface in Ammonium Sulfide Solutions in SEMICONDUCTORS
  • 2019-02 Highly Efficient Semiconductor Emitter of Single Photons in the Red Spectral Range in JETP LETTERS
  • 2018-08 Single-Photon Emitter at 80 K Based on a Dielectric Nanoantenna with a CdSe/ZnSe Quantum Dot in JETP LETTERS
  • 2018-03-27 Contactless Measurement of Electron Concentration in Undoped Homoepitaxial InSb Layers in JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS
  • 2018-03 Nanoheterostructures with CdTe/ZnMgSeTe Quantum Dots for Single-Photon Emitters Grown by Molecular Beam Epitaxy in TECHNICAL PHYSICS LETTERS
  • 2018-02 Spin-Dependent Electronic Dynamics in a Hybrid Nonresonance III–V/II–VI Heterostructure in JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS
  • 2017-08-25 Effect of ammonium-sulfide solvent on the surface passivation of GaSb (100) in SEMICONDUCTORS
  • 2017-01 Study of the parameters of nanoscale layers in nanoheterostructures based on II–VI semiconductor compounds in SEMICONDUCTORS
  • 2016-12-17 Photoreflectance of indium antimonide in PHYSICS OF THE SOLID STATE
  • 2016-12 Heterostructures with CdTe/ZnTe quantum dots for single photon emitters grown by molecular beam epitaxy in TECHNICAL PHYSICS LETTERS
  • 2016-11-15 Resonance energy transfer in a dense array of II–VI quantum dots in PHYSICS OF THE SOLID STATE
  • 2016-07 Isolated quantum emitters originating from defect centers in a ZnSe/ZnMgSSe heterostructure in JETP LETTERS
  • 2016-05 Complex use of the diffraction techniques in depth profiling of the crystal lattice parameter and composition of InGaAs/GaAs gradient layers in TECHNICAL PHYSICS LETTERS
  • 2015-08-02 Molecular beam epitaxy of ZnSSe/CdSe short-period superlattices for III–V/II–VI multijunction solar cells in SEMICONDUCTORS
  • 2015-03-04 Optical studies of carriers’ vertical transport in the alternately-strained ZnS0.4Se0.6/CdSe superlattice in SEMICONDUCTORS
  • 2015-03-04 Molecular-beam epitaxy of heterostructures of wide-gap II–VI compounds for low-threshold lasers with optical and electron pumping in SEMICONDUCTORS
  • 2014-01-05 Transport parameters and optical properties of selectively doped Ga(Al)As/Zn(Mn)Se heterovalent structures with a two-dimensional hole channel in SEMICONDUCTORS
  • 2014-01-05 Molecular beam epitaxy of AlGaAs/Zn(Mn)Se hybrid nanostructures with InAs/AlGaAs quantum dots near the heterovalent interface in SEMICONDUCTORS
  • 2013-06-28 A scanning pulse-periodic laser based on heterostructures containing ZnSe with electron beam pumping in OPTICS AND SPECTROSCOPY
  • 2013-05-09 Chemical passivation of InSb (100) substrates in aqueous solutions of sodium sulfide in SEMICONDUCTORS
  • 2013-01 Study of the gradual degradation of ZnSe-containing multilayer nanostructures—active elements of electron-beam and optical pumping lasers in JOURNAL OF SURFACE INVESTIGATION: X-RAY, SYNCHROTRON AND NEUTRON TECHNIQUES
  • 2012-09-21 Laser and Optical Properties of Green-Emitting ZnCdSe Quantum Dot Based Heterostructures in NANO-OPTICS FOR ENHANCING LIGHT-MATTER INTERACTIONS ON A MOLECULAR SCALE
  • 2011-08-27 Influence of nonlinear effects on destruction of active elements of electron-beam-pumped lasers Based on ZnSe-containing quantum-size structures in OPTICS AND SPECTROSCOPY
  • 2010-02 Spin injection in GaAs/GaSb quantum-well heterostructures in SEMICONDUCTORS
  • 2009-09 Pulsed heating of active elements of low-threshold electron-beam-pumped green lasers based on nanostructures of II–VI compounds in OPTICS AND SPECTROSCOPY
  • 2009-06-07 Sulfide passivation of InAs(100) substrates in Na2S solutions in PHYSICS OF THE SOLID STATE
  • 2009-01 Evidence for Mn2+ fine structure in CdMnSe/ZnSe quantum dots caused by their low dimensionality in JETP LETTERS
  • 2008-12-17 An efficient electron-beam-pumped semiconductor laser for the green spectral range based on II–VI multilayer nanostructures in SEMICONDUCTORS
  • 2008-02 Magnetooptics of (Zn,Cd,Mn)Te/ZnTe heterostructures with a small discontinuity in the valence band potential in JETP LETTERS
  • 2007-12 Green lasers based on CdSe/ZnSe nanostructures pumped by electron beams with energies below 10 keV in TECHNICAL PHYSICS LETTERS
  • 2007-11 CdSe/ZnSe quantum dot structures grown by molecular beam epitaxy with a CdTe submonolayer stressor in SEMICONDUCTORS
  • 2007-04 Cathodoluminescence of laser AIIBVI heterostructures in SEMICONDUCTORS
  • 2005-06 Giant Zeeman Splitting of Excitons in a III–V Nonmagnetic Quantum Well Electronically Coupled With a II–VI Semimagnetic Quantum Well in JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM
  • 2005-04 The exciton photoluminescence and vertical transport of photoinduced carriers in CdSe/CdMgSe superlattices in SEMICONDUCTORS
  • 2005-03 Midinfrared injection-pumped laser based on a III–V/II–VI hybrid heterostructure with submonolayer InSb insets in TECHNICAL PHYSICS LETTERS
  • 2004-09 Lasing in Cd(Zn)Se/ZnMgSSe heterostructures pumped by nitrogen and InGaN/GaN lasers in SEMICONDUCTORS
  • 2003-06 Mid-infrared (λ=2.775 µm) injection laser based on AlGaAsSb/InAs/CdMgSe hybrid double heterostructure grown by molecular-beam epitaxy in SEMICONDUCTORS
  • 2002-01 Sulfide passivating coatings on GaAs(100) surface under conditions of MBE growth of 〈II–VI〉/GaAs in SEMICONDUCTORS
  • 2001-04 Structural, luminescent, and transport properties of hybrid AlAsSb/InAs/Cd(Mg)Se heterostructures grown by molecular beam epitaxy in SEMICONDUCTORS
  • 1999-09 Blue-green ZnSe lasers with a new type of active region in SEMICONDUCTORS
  • 1998-10 Molecular beam epitaxy of alternating-strain ZnSe-based multilayer heterostructures for blue-green lasers in SEMICONDUCTORS
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