Yu M Shernyakov


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Person Info

NAME

Yu M

SURNAME

Shernyakov

Publications in SciGraph latest 50 shown

  • 2018-10 Effect of Epitaxial-Structure Design and Growth Parameters on the Characteristics of Metamorphic Lasers of the 1.46-μm Optical Range Based on Quantum Dots Grown on GaAs Substrates in SEMICONDUCTORS
  • 2018-08 Power Characteristics and Temperature Dependence of the Angular Beam Divergence of Lasers with a Near-Surface Active Region in TECHNICAL PHYSICS LETTERS
  • 2018-01 Investigation of the Modified Structure of a Quantum Cascade Laser in SEMICONDUCTORS
  • 2016-10 On the gain properties of “thin” elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm in SEMICONDUCTORS
  • 2015-08 Effect of the bimodality of a QD array on the optical properties and threshold characteristics of QD lasers in SEMICONDUCTORS
  • 2015-05 The effect of asymmetric barrier layers in the waveguide region on power characteristics of QW lasers in TECHNICAL PHYSICS LETTERS
  • 2013-12 Spectral dependence of the linewidth enhancement factor in quantum dot lasers in SEMICONDUCTORS
  • 2013-09 Preparation of a strip structure for quantum-cascade lasers in TECHNICAL PHYSICS LETTERS
  • 2013-08 Optimization of the design and mode of operation of a QD laser for reducing the heat-to-bitrate ratio in SEMICONDUCTORS
  • 2012-10 Effect of active-region modulation doping on simultaneous ground-state and excited-state lasing in quantum-dot lasers in SEMICONDUCTORS
  • 2012-08 Effect of asymmetric barrier layers in the waveguide region on the temperature characteristics of quantum-well lasers in SEMICONDUCTORS
  • 2012-02 Features of simultaneous ground- and excited-state lasing in quantum dot lasers in SEMICONDUCTORS
  • 2012-02 Effect of an excited-state optical transition on the linewidth enhancement factor of quantum dot lasers in SEMICONDUCTORS
  • 2010-10 A single-spatial-mode semiconductor laser based on InAs/InGaAs quantum dots with a diffraction filter of optical modes in SEMICONDUCTORS
  • 2009-12 Temperature and current dependences of the lasing spectrum’s width of quantum dot lasers in SEMICONDUCTORS
  • 2009-05 Quantum dot semiconductor lasers of the 1.3 μm wavelength range with high temperature stability of the lasing wavelength (0.2 nm/K) in SEMICONDUCTORS
  • 2008-12 High-gain injection quantum-dot lasers operating at wavelengths above 1300 nm in TECHNICAL PHYSICS LETTERS
  • 2006-10 Experimental study of temperature dependence of threshold characteristics in semiconductor VCSELs based on submonolayer InGaAs QDs in SEMICONDUCTORS
  • 2006-05 VCSELs based on arrays of sub-monolayer InGaAs quantum dots in SEMICONDUCTORS
  • 2006-03 Lasing properties of strain-compensated InAs/InGaAsN/GaAsN heterostructures in 1.3–1.55 μm spectral range in TECHNICAL PHYSICS LETTERS
  • 2005-12 Continuous-wave lasing of single-mode metamorphic quantum dot lasers for the 1.5-μm spectral region in SEMICONDUCTORS
  • 2005-04 Temperature dependence of the effective coefficient of Auger recombination in 1.3 μm InAs/GaAs QD lasers in SEMICONDUCTORS
  • 2005-04 Effect of p-doping of the active region on the temperature stability of InAs/GaAs QD lasers in SEMICONDUCTORS
  • 2004-08 Lasing wavelength of quantum dot heterostructures controlled within the 1.3–0.85 μm range by means of high-temperature annealing in TECHNICAL PHYSICS LETTERS
  • 2004-06 High-power 1.5 µm InAs-InGaAs quantum dot lasers on GaAs substrates in SEMICONDUCTORS
  • 2004-05 Low-threshold 1.3-µm injection lasers based on single InGaAsN quantum wells in SEMICONDUCTORS
  • 2003-12 Lasing at 1.5 µm in quantum dot structures on GaAs substrates in SEMICONDUCTORS
  • 2003-10 Temperature characteristics of low-threshold high-efficiency quantum-dot lasers with the emission wavelength from 1.25 to 1.29 µm in SEMICONDUCTORS
  • 2003-10 Design and technology of vertical-cavity surface-emitting lasers with nonconducting epitaxial mirrors in SEMICONDUCTORS
  • 2003-09 Metamorphic lasers for 1.3-µm spectral range grown on GaAs substrates by MBE in SEMICONDUCTORS
  • 2003-05 Longwave generation in laser structures based on InGaAs(N) quantum wells on GaAs substrates in TECHNICAL PHYSICS LETTERS
  • 2003-01 Long-term stability of long-wavelength (>1.25 µm) quantum-dot lasers fabricated on GaAs substrates in TECHNICAL PHYSICS
  • 2002-11 High efficiency (ηD>80%) long wavelength (λ>1.25 μm) quantum dot diode lasers on GaAs substrates in SEMICONDUCTORS
  • 2000-05 Power conversion efficiency of quantum dot laser diodes in SEMICONDUCTORS
  • 2000-05 InGaAs-GaAs quantum dots for application in long wavelength (1.3 µm) resonant vertical cavity enhanced devices in JOURNAL OF ELECTRONIC MATERIALS
  • 2000-05 Stacked InAs/InGaAs quantum dot heterostructures for optical sources emitting in the 1.3 µm wavelength range in SEMICONDUCTORS
  • 2000-01 A spatially single-mode laser for a range of 1.25–1.28 μm on the basis of InAs quantum dots on a GaAs substrate in SEMICONDUCTORS
  • 1999-09 Gain characteristics of quantum-dot injection lasers in SEMICONDUCTORS
  • 1999-08 Lasing at a wavelength close to 1.3 µm in InAs quantum-dot structures in SEMICONDUCTORS
  • 1999-02 Photo-and electroluminescence in the 1.3-µm wavelength range from quantum-dot structures grown on GaAs substrates in SEMICONDUCTORS
  • 1998-09 Effect of the quantum-dot surface density in the active region on injection-laser characteristics in SEMICONDUCTORS
  • 1998-08 Spontaneous long-wavelength interlevel emission in quantum-dot laser structures in TECHNICAL PHYSICS LETTERS
  • 1998-05 Operating characteristics and their anisotropy in a high-power laser (1.5 W, 300 K) with a quantum-dot active region in TECHNICAL PHYSICS LETTERS
  • 1998-03 Injection lasers based on InGaAs quantum dots in an AlGaAs matrix in JOURNAL OF ELECTRONIC MATERIALS
  • 1998-02 Spontaneous far-IR emission accompanying transitions of charge carriers between levels of quantum dots in JETP LETTERS
  • 1998-01 Low-threshold quantum-dot injection heterolaser emitting at 1.84 μm in TECHNICAL PHYSICS LETTERS
  • 1997-02 Quantum dot injection heterolaser with ultrahigh thermal stability of the threshold current up to 50 °C in SEMICONDUCTORS
  • 1997-02 Quantum-dot cw heterojunction injection laser operating at room temperature with an output power of 1 W in TECHNICAL PHYSICS LETTERS
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