Alexey P Vasil'Ev

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Alexey P



Publications in SciGraph latest 50 shown

  • 2021-12-13 The Design of an Electrically-Driven Single Photon Source of the 1.3-μm Spectral Range Based on a Vertical Microcavity with Intracavity Contacts in TECHNICAL PHYSICS LETTERS
  • 2020-12 The Effect of a Saturable Absorber in Long-Wavelength Vertical-Cavity Surface-Emitting Lasers Fabricated by Wafer Fusion Technology in TECHNICAL PHYSICS LETTERS
  • 2020-09 A Vertical-Cavity Surface-Emitting Laser for the 1.55-μm Spectral Range with Tunnel Junction Based on n++-InGaAs/p++-InGaAs/p++-InAlGaAs Layers in TECHNICAL PHYSICS LETTERS
  • 2019-11 InAlAs/InGaAs/InP High-Electron-Mobility Transistors with a Composite Channel and Higher Breakdown Characteristics in TECHNICAL PHYSICS LETTERS
  • 2019-10 Heterobarrier Varactors with Nonuniformly Doped Modulation Layers in TECHNICAL PHYSICS LETTERS
  • 2019-09 The Effect of Active Region Heating on Dynamic and Power Characteristics of Quantum Cascade Lasers Emitting at a Wavelength of 4.8 µm at Room Temperature in OPTICS AND SPECTROSCOPY
  • 2018-10 Epitaxial InGaAs/InAlAs/AlAs Structures for Heterobarrier Varactors with Low Leakage Current in TECHNICAL PHYSICS LETTERS
  • 2018-09-06 Effect of Epitaxial-Structure Design and Growth Parameters on the Characteristics of Metamorphic Lasers of the 1.46-μm Optical Range Based on Quantum Dots Grown on GaAs Substrates in SEMICONDUCTORS
  • 2018-09 Quantum-Cascade Lasers Generating at the 4.8-μm Wavelength at Room Temperature in TECHNICAL PHYSICS LETTERS
  • 2018-04-03 Optical Properties of AlGaAs/GaAs Resonant Bragg Structure at the Second Quantum State in SEMICONDUCTORS
  • 2018-01-17 Optically pumped lasing in a rolled-up dot-in-a-well (DWELL) microtube via the support of Au pad in APPLIED PHYSICS B
  • 2018-01 The Influence of Cavity Design on the Linewidth of Near-IR Single-Mode Vertical-Cavity Surface-Emitting Lasers in TECHNICAL PHYSICS LETTERS
  • 2018-01 Emission-Line Width and α-Factor of 850-nm Single-Mode Vertical-Cavity Surface-Emitting Lasers Based on InGaAs/AlGaAs Quantum Wells in SEMICONDUCTORS
  • 2017-11-03 Molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors in SEMICONDUCTORS
  • 2016-10-11 Polarization characteristics of 850-nm vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal oxide current aperture in SEMICONDUCTORS
  • 2016-10 Laser generation at 1.3 μm in vertical microcavities containing InAs/InGaAs quantum dot arrays under optical pumping in TECHNICAL PHYSICS LETTERS
  • 2016-10 A study of distributed dielectric bragg reflectors for vertically emitting lasers of the near-IR range in TECHNICAL PHYSICS LETTERS
  • 2016-01 Effect of a terahertz cavity on the conductivity of short-period GaAs/AlAs superlattices in JETP LETTERS
  • 2015-10-13 Emission spectra of a laser based on an In(Ga)As/GaAs quantum-dot superlattice in SEMICONDUCTORS
  • 2015-01-08 Terahertz radiation associated with the impurity electron transition in quantum wells upon optical and electrical pumping in SEMICONDUCTORS
  • 2014-12 Precise calibration of thickness and composition of epitaxial AlGaAs heterostructures with vertical-cavity optical microresonators in TECHNICAL PHYSICS LETTERS
  • 2014-08-06 Influence of GaAs spacer-layer thickness on quantum coupling and optical polarization in a ten-layer system of vertically correlated InAs/GaAs quantum dots in SEMICONDUCTORS
  • 2013-07-06 Single-spatial-mode semiconductor VCSELs with a nonplanar upper dielectric DBR in SEMICONDUCTORS
  • 2013-01-07 Optical anisotropy of InGaAs quantum dots in SEMICONDUCTORS
  • 2011-12-29 Submicron surface relief fabrication technology for epitaxial GaAs structures with thin AlGaAs stop layers in TECHNICAL PHYSICS LETTERS
  • 2010-12-29 Optical anisotropy of InAs quantum dots in TECHNICAL PHYSICS LETTERS
  • 2010-11-19 Terahertz emission and photoconductivity in n-type GaAs/AlGaAs quantum wells: the role of resonant impurity states in SEMICONDUCTORS
  • 2010-09-29 An (AlGaAs/GaAs/AlGaAs)60 resonant Bragg structure based on the second quantum-confinement level of heavy-hole excitons in quantum wells in SEMICONDUCTORS
  • 2010-06-27 Wannier-Stark states in a superlattice of InAs/GaAs quantum dots in SEMICONDUCTORS
  • 2008-02 Absorption and emission of terahertz radiation in doped GaAs/AlGaAs quantum wells in BULLETIN OF THE RUSSIAN ACADEMY OF SCIENCES: PHYSICS
  • 2007-07 Metamorphic InAs quantum dots: Photoluminescence features related to cooperative phenomena in the quantum dot-matrix system in TECHNICAL PHYSICS LETTERS
  • 2007-06 Stark effect in a multilayer system of coupled InAs/GaAs quantum dots in TECHNICAL PHYSICS LETTERS
  • 2007-05 Optical properties of strain-compensated InAs/InGaAsN/GaAsN superlattices in TECHNICAL PHYSICS LETTERS
  • 2006-11 Photoemission of polarized electrons from InAlGaAs/GaAs superlattices with minimum conduction band offsets in SEMICONDUCTORS
  • 2006-09 Room-temperature 1.3-μm lasing in a microdisk with quantum dots in SEMICONDUCTORS
  • 2006-03 Coupling of electron states in the InAs/GaAs quantum dot molecule in SEMICONDUCTORS
  • 2006-03 InAs/InGaNAs/GaNAs QW and QD heterostructures emitting at 1.4–1.8 μm in SEMICONDUCTORS
  • 2005-12 Continuous-wave lasing of single-mode metamorphic quantum dot lasers for the 1.5-μm spectral region in SEMICONDUCTORS
  • 2005-10 Nonequilibrium room-temperature carrier distribution in InAs quantum dots overgrown with thin AlAs/InAlAs layers in SEMICONDUCTORS
  • 2005-04 Temperature dependence of the effective coefficient of Auger recombination in 1.3 μm InAs/GaAs QD lasers in SEMICONDUCTORS
  • 2005-04 Design and fabrication technology for arrays for vertical-cavity surface-emitting lasers in SEMICONDUCTORS
  • 2004-09 Characteristics of planar diodes based on heavily doped GaAs/AlAs superlattices in the terahertz frequency region in SEMICONDUCTORS
  • 2004-08 Lasing wavelength of quantum dot heterostructures controlled within the 1.3–0.85 μm range by means of high-temperature annealing in TECHNICAL PHYSICS LETTERS
  • 2004-06 High-power 1.5 µm InAs-InGaAs quantum dot lasers on GaAs substrates in SEMICONDUCTORS
  • 2004-01 High-power single-mode 1.3-μm lasers based on InAs/AlGaAs/GaAs quantum dot heterostructures in TECHNICAL PHYSICS LETTERS
  • 2003-10 Temperature characteristics of low-threshold high-efficiency quantum-dot lasers with the emission wavelength from 1.25 to 1.29 µm in SEMICONDUCTORS
  • 2003-10 Design and technology of vertical-cavity surface-emitting lasers with nonconducting epitaxial mirrors in SEMICONDUCTORS
  • 2003-09 Metamorphic lasers for 1.3-µm spectral range grown on GaAs substrates by MBE in SEMICONDUCTORS
  • 2003-09 Metamorphic modulation-doped InAlAs/InGaAs/InAlAs heterostructures with high electron mobility grown on gaas substrates in SEMICONDUCTORS
  • 2003-05 Structural and optical properties of InAs quantum dots in AlGaAs matrix in SEMICONDUCTORS
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