Nickolay V Sibirev


Ontology type: schema:Person     


Person Info

NAME

Nickolay V

SURNAME

Sibirev

Publications in SciGraph latest 50 shown

  • 2020-12 Study of Wurtzite Crystal Phase Stabilization in Heterostructured Ga(As,P) Nanowires in SEMICONDUCTORS
  • 2020-10-09 Crystalline-Phase Switching in Heterostructured Ga(As,P) Nanowires under the Impact of Elastic Strains in SEMICONDUCTORS
  • 2019-12 Widening the Length Distributions in Irregular Arrays of Self-Catalyzed III–V Nanowires in SEMICONDUCTORS
  • 2019-12 Impact of Elastic Stress on Crystal Phase of GaP Nanowires in PHYSICS OF THE SOLID STATE
  • 2019-10 The Role of Elastic Stresses in the Formation of Nitride Nanowires with Cubic Crystalline Structure in TECHNICAL PHYSICS LETTERS
  • 2019-08 The Influence of EL2 Centers on the Photoelectric Response of an Array of Radial GaAs/AlGaAs Nanowires in TECHNICAL PHYSICS LETTERS
  • 2019-03 On the Mechanism of the Vapor–Solid–Solid Growth of Au-Catalyzed GaAs Nanowires in SEMICONDUCTORS
  • 2019-02 Growth of GaN Nanotubes and Nanowires on Au–Ni Catalysts in TECHNICAL PHYSICS LETTERS
  • 2018-12 Two Methods of Calculation Ternary Nanowire Composition in SEMICONDUCTORS
  • 2018-12 Estimation of Evaporation Rate from Gold-Silicon Alloy Based on the Nucleation Time and Nanowire Length Distributions in SEMICONDUCTORS
  • 2018-12 Growth Modes of GaN Plasma-Assisted MBE Nanowires in SEMICONDUCTORS
  • 2018-11-07 Solar Cell Based on Core/Shell Nanowires in SEMICONDUCTORS
  • 2018-11 Photodynamics of Nonlinear Effects of Picosecond Laser Action on CdSe/ZnS QDs Colloidal Solutions in OPTICS AND SPECTROSCOPY
  • 2018-01 GaP/Si(111) Nanowire Crystals Synthesized by Molecular-Beam Epitaxy with Switching between the Hexagonal and Cubic Phases in SEMICONDUCTORS
  • 2016-12 On a new method of heterojunction formation in III–V nanowires in SEMICONDUCTORS
  • 2016-06-18 Regimes of radial growth for Ga-catalyzed GaAs nanowires in APPLIED PHYSICS A
  • 2015-12 The influence of liquid drop shape on crystalline structure of nanowires in TECHNICAL PHYSICS LETTERS
  • 2014-06 The initial stage of growth of self-induced GaN nanowires in TECHNICAL PHYSICS LETTERS
  • 2014-03-07 Study of the electrical properties of individual (Ga,Mn)As nanowires in SEMICONDUCTORS
  • 2013-10-12 Effect of an arsenic flux on the molecular-beam epitaxy of self-catalytic (Ga,Mn)As nanowire crystals in SEMICONDUCTORS
  • 2013-07 Statistics of nucleation associated with the growth of whisker nanocrystals in TECHNICAL PHYSICS LETTERS
  • 2012-06-05 Effect of diffusion from a lateral surface on the rate of GaN nanowire growth in SEMICONDUCTORS
  • 2012-03 Wetting regime of semiconductor nanowhisker growth: Stability and shape of catalyst droplet in TECHNICAL PHYSICS LETTERS
  • 2011-07 Numerical analysis of the effect of fluctuations on the growth of nuclei during first-order phase transitions in TECHNICAL PHYSICS LETTERS
  • 2011-02-19 Self-consistent model of nanowire growth and crystal structure with regard to the adatom diffusion in TECHNICAL PHYSICS
  • 2010-07-24 Growth of Inclined GaAs Nanowires by Molecular Beam Epitaxy: Theory and Experiment in NANOSCALE RESEARCH LETTERS
  • 2010-07-08 Surface energy and crystal structure of nanowhiskers of III–V semiconductor compounds in PHYSICS OF THE SOLID STATE
  • 2010-01-26 The initial stage of growth of crystalline nanowhiskers in SEMICONDUCTORS
  • 2009-09-15 Nonlinear effects during the growth of semiconductor nanowires in SEMICONDUCTORS
  • 2009-04-30 On diffusion lengths of Ga adatoms on AlAs(111) and GaAs(111) surfaces in TECHNICAL PHYSICS
  • 2008-11 Deposition-rate dependence of the height of GaAs-nanowires in SEMICONDUCTORS
  • 2008-09-30 Heterostructure formation in nanowhiskers via diffusion mechanism in TECHNICAL PHYSICS LETTERS
  • 2008-06-13 Lateral ordering of GaAs nanowhiskers on GaAs(111)As and GaAs (110) surfaces during molecular-beam epitaxy in SEMICONDUCTORS
  • 2008-06 Effect of growth atmosphere on the temperature profile along a nanowhisker in TECHNICAL PHYSICS LETTERS
  • 2008-06 Hexagonal structures in GaAs nanowhiskers in TECHNICAL PHYSICS LETTERS
  • 2007-10 Nucleation at the lateral surface and the shape of whisker nanocrystals in SEMICONDUCTORS
  • 2007-07 Effect of deposition conditions on nanowhisker morphology in SEMICONDUCTORS
  • 2007-06 Computer simulation of coherent island growth in Ge/Si and InAs/GaAs systems in TECHNICAL PHYSICS LETTERS
  • 2006-12 Assessing the minimum diameter of nanowhiskers in TECHNICAL PHYSICS LETTERS
  • 2006-09 The role of surface diffusion of adatoms in the formation of nanowire crystals in SEMICONDUCTORS
  • 2006-04 Temperature profile along a nanowhisker growing in high vacuum in TECHNICAL PHYSICS LETTERS
  • 2006-03 Nanodimensional whisker growth by the generalized vapor-liquid-crystal mechanism in TECHNICAL PHYSICS LETTERS
  • 2006-03 The theory of the formation of multilayered thin films on solid surfaces in SEMICONDUCTORS
  • 2006-02 The band structure and photoluminescence in a Ge0.8Si0.2/Ge0.1Si0.9 superlattice with vertically correlated quantum dots in SEMICONDUCTORS
  • 2006-01 A3B5 nanowhiskers: MBE growth and properties in CZECHOSLOVAK JOURNAL OF PHYSICS
  • 2005-05 The diffusion mechanism in the formation of GaAs and AlGaAs nanowhiskers during the process of molecular-beam epitaxy in SEMICONDUCTORS
  • 2005-02 Time variation of the mean quantum dot size at the kinetic growth stage in TECHNICAL PHYSICS LETTERS
  • 2004-09 A modified Kolmogorov model and the growth rate of a crystal face of arbitrary size in TECHNICAL PHYSICS LETTERS
  • 2004-08 Kinetic model of the growth of nanodimensional whiskers by the vapor-liquid-crystal mechanism in TECHNICAL PHYSICS LETTERS
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