Ivan N Arsentyev

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Ivan N



Publications in SciGraph latest 50 shown

  • 2022-04 On the Growth of Thin-Film AlGaN/GaN Epitaxial Heterostructures on Hybrid Substrates Containing Layers of Silicon Carbide and Porous Silicon in SEMICONDUCTORS
  • 2022-04 Properties of Compliant Substrates Based on Porous Silicon Formed by Two-stage Etching in SEMICONDUCTORS
  • 2021-01 Structural and Spectroscopic Studies of Epitaxial GaAs Layers Grown on Compliant Substrates Based on a Superstructure Layer and Protoporous Silicon in SEMICONDUCTORS
  • 2021-01 Spectroscopic Studies of Integrated GaAs/Si Heterostructures in SEMICONDUCTORS
  • 2020-05-09 Influence of a Nanoporous Silicon Layer on the Practical Implementation and Specific Features of the Epitaxial Growth of GaN Layers on SiC/por-Si/c-Si Templates in SEMICONDUCTORS
  • 2019-11-06 On the Phase Composition, Morphology, and Optical and Electronic Characteristics of AlN Nanofilms Grown on Misoriented GaAs(100) Substrates in SEMICONDUCTORS
  • 2019-08-07 Structural and Morphological Properties of Hybrid Heterostructures Based on GaN Grown on a Compliant por-Si(111) Substrate in SEMICONDUCTORS
  • 2019-08-07 Investigation of the Current–Voltage Characteristics of New MnO2/GaAs(100) and V2O5/GaAs(100) Heterostructures Subjected to Heat Treatment in SEMICONDUCTORS
  • 2019-07-02 Investigation into the Influence of a Buffer Layer of Nanoporous Silicon on the Atomic and Electronic Structure and Optical Properties of AIIIN/por-Si Heterostructures Grown by Plasma-Activated Molecular-Beam Epitaxy in SEMICONDUCTORS
  • 2019-01 Influence of a por-Si Buffer Layer on the Optical Properties of Epitaxial InxGa1 –xN/Si(111) Heterostructures with a Nanocolumnar Film Morphology in SEMICONDUCTORS
  • 2018-12-24 Effect of a por-Si Buffer Layer on the Structure and Morphology of Epitaxial InxGa1 – xN/Si(111) Heterostructures in SEMICONDUCTORS
  • 2018-08-22 Effect of Conditions of Electrochemical Etching on the Morphological, Structural, and Optical Properties of Porous Gallium Arsenide in SEMICONDUCTORS
  • 2018-07-06 Effect of Misorientation and Preliminary Etching of the Substrate on the Structural and Optical Properties of Integrated GaAs/Si(100) Heterostructures Produced by Vapor Phase Epitaxy in SEMICONDUCTORS
  • 2018-01 Influence of Substrate Misorientation on the Composition and the Structural and Photoluminescence Properties of Epitaxial Layers Grown on GaAs(100) in SEMICONDUCTORS
  • 2017-09-03 Experimental studies of the effects of atomic ordering in epitaxial GaxIn1 – xP alloys on their optical properties in SEMICONDUCTORS
  • 2017-09 Structural and optical studies of thin films of aluminum nitride grown via ion-plasma sputtering on gallium arsenide substrates with different orientations in BULLETIN OF THE RUSSIAN ACADEMY OF SCIENCES: PHYSICS
  • 2017-08-25 Experimental studies of the effects of atomic ordering in epitaxial GaxIn1–xP alloys on their structural and morphological properties in SEMICONDUCTORS
  • 2016-09-16 Growth features and spectroscopic structure investigations of nanoprofiled AlN films formed on misoriented GaAs substrates in SEMICONDUCTORS
  • 2016-07-06 Structural and optical properties of GaAs(100) with a thin surface layer doped with chromium in SEMICONDUCTORS
  • 2015-10-13 Properties of AlN films deposited by reactive ion-plasma sputtering in SEMICONDUCTORS
  • 2015-08-02 AlxGa1 − xAs/GaAs(100) hetermostructures with anomalously high carrier mobility in SEMICONDUCTORS
  • 2015-07-01 Investigations of nanodimensional Al2O3 films deposited by ion-plasma sputtering onto porous silicon in SEMICONDUCTORS
  • 2014-08-06 Structural and optical properties of heavily doped AlxGa1 − xAs1 − yPy:Mg alloys produced by metal-organic chemical vapor deposition in SEMICONDUCTORS
  • 2014-01-05 Structure and optical properties of heterostructures based on MOCVD (AlxGa1 − xAs1 − yPy)1 − zSiz alloys in SEMICONDUCTORS
  • 2013-01-07 Properties of epitaxial (AlxGa1 − xAs)1 − yCy alloys grown by MOCVD autoepitaxy in SEMICONDUCTORS
  • 2013-01-07 Superstructured ordering in AlxGa1 − xAs and GaxIn1 − xP alloys in SEMICONDUCTORS
  • 2012-06-05 Structural and spectral features of MOCVD AlxGayIn1 − x − yAszP1 − z/GaAs (100) alloys in SEMICONDUCTORS
  • 2012-06-05 Effect of the finishing treatment of a gallium arsenide surface on the spectrum of electron states in n-GaAs (100) in SEMICONDUCTORS
  • 2011-11 Spinodal Decomposition of GaxIn1−xAsyP1−yQuaternary Alloys in SEMICONDUCTORS
  • 2011-04-16 Effect of silicon on relaxation of the crystal lattice in MOCVD–hydride AlxGa1 − xAs:Si/GaAs(100) heterostructures in SEMICONDUCTORS
  • 2010-08-18 Relaxation of crystal lattice parameters and structural ordering in InxGa1 − xAs epitaxial alloys in SEMICONDUCTORS
  • 2010-02 The substructure and luminescence of low-temperature AlGaAs/GaAs(100) heterostructures in SEMICONDUCTORS
  • 2010-01-23 XRD and Raman Study of Low Temperature AlGaAs/GaAs (100) Heterostructures in ADVANCED MATERIALS AND TECHNOLOGIES FOR MICRO/NANO-DEVICES, SENSORS AND ACTUATORS
  • 2009-12-12 Structural and optical properties of low-temperature hydride-MOCVD AlGaAs/GaAs(100) heterostructures based on omission solid solutions in SEMICONDUCTORS
  • 2009-09-15 Phase formation under the effect of spinodal decomposition in epitaxial alloys of GaxIn1 − xP/GaAs(100) heterostructures in SEMICONDUCTORS
  • 2008-07-11 Properties of barrier contacts with nanosize TiBx layers to InP in SEMICONDUCTORS
  • 2008-04 Investigation of porous InP by X-ray diffraction, IR spectroscopy, USXES, XANES spectroscopy, and photoluminescence in BULLETIN OF THE RUSSIAN ACADEMY OF SCIENCES: PHYSICS
  • Affiliations

  • Ioffe Institute (current)
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