Nikolay N Ledentsov


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Person Info

NAME

Nikolay N

SURNAME

Ledentsov

Publications in SciGraph latest 50 shown

  • 2018-01 A Design and New Functionality of Antiwaveguiding Vertical-Cavity Surface-Emitting Lasers for a Wavelength of 850 nm in TECHNICAL PHYSICS LETTERS
  • 2014-01 Degradation-robust 850-nm vertical-cavity surface-emitting lasers for 25Gb/s optical data transmission in SEMICONDUCTORS
  • 2013-11 Efficient electro-optic semiconductor medium based on type-II heterostructures in SEMICONDUCTORS
  • 2013-01 Optical anisotropy of InGaAs quantum dots in SEMICONDUCTORS
  • 2012-02 Decreasing parasitic capacitance in vertical-cavity surface-emitting laser with selectively oxidized aperture in TECHNICAL PHYSICS LETTERS
  • 2011-06 Matrices of 960-nm vertical-cavity surface-emitting lasers in SEMICONDUCTORS
  • 2011-05 Dynamic properties of AlGaAs vertical cavity surface emitting lasers with active region based on submonolayer InAs insertions in SEMICONDUCTORS
  • 2010-12 Optical anisotropy of InAs quantum dots in TECHNICAL PHYSICS LETTERS
  • 2010-10 Analysis of mechanisms of carrier emission in the p-i-n structures with In(Ga)As quantum dots in SEMICONDUCTORS
  • 2010-07 Structural and optical properties of InAlN/GaN distributed Bragg reflectors in SEMICONDUCTORS
  • 2009-08 Optical and X-ray diffraction studies of multilayer structures based on InGaN/GaN solid solutions in PHYSICS OF THE SOLID STATE
  • 2009-05 Quantum dot semiconductor lasers of the 1.3 μm wavelength range with high temperature stability of the lasing wavelength (0.2 nm/K) in SEMICONDUCTORS
  • 2009-04 AlGaAs/GaAs photovoltaic cells with an array of InGaAs QDs in SEMICONDUCTORS
  • 2008-10 Effect of excitation level on the optical properties of GaAs/AlGaO microdisks with an active region containing InAs quantum dots in SEMICONDUCTORS
  • 2008-06 Energy characteristics of excitons in structures based on InGaN alloys in SEMICONDUCTORS
  • 2008-02 Photoluminescence of localized excitons in InGan quantum dots in SEMICONDUCTORS
  • 2007-10 The use of spatially ordered arrays of etched holes for fabrication of single-mode vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots in SEMICONDUCTORS
  • 2007-06-30 Quantum dots for GaAs-based surface emitting lasers at 1300 nm in ADVANCES IN SOLID STATE PHYSICS 40
  • 2007-06-27 Diode lasers based on quantum dots in ADVANCES IN SOLID STATE PHYSICS 38
  • 2007-05 Nonequilibrium population of charge carriers in structures with InGaN deep quantum dots in SEMICONDUCTORS
  • 2006-10 Experimental study of temperature dependence of threshold characteristics in semiconductor VCSELs based on submonolayer InGaAs QDs in SEMICONDUCTORS
  • 2006-09 Room-temperature 1.3-μm lasing in a microdisk with quantum dots in SEMICONDUCTORS
  • 2006-05 The study of lateral carrier transport in structures with InGaN quantum dots in the active region in SEMICONDUCTORS
  • 2006-04 Optical studies of asymmetric-waveguide submonolayer InGaAs QD microdisks formed by selective oxidation in SEMICONDUCTORS
  • 2005-12 Continuous-wave lasing of single-mode metamorphic quantum dot lasers for the 1.5-μm spectral region in SEMICONDUCTORS
  • 2005-11 Studies of the electron spectrum in structures with InGaN quantum dots using photocurrent spectroscopy in SEMICONDUCTORS
  • 2005-07 Stresses in selectively oxidized GaAs/(AlGa)xOy structures in SEMICONDUCTORS
  • 2005-04 A study of carrier statistics in InGaN/Gan LED structures in SEMICONDUCTORS
  • 2005-04 Effect of p-doping of the active region on the temperature stability of InAs/GaAs QD lasers in SEMICONDUCTORS
  • 2005-02 Kinetics and inhomogeneous carrier injection in InGaN nanolayers in SEMICONDUCTORS
  • 2005-02 Dichroism in transmission of light by an array of self-assembled GaAs quantum wires on a nanofaceted A(311) surface in PHYSICS OF THE SOLID STATE
  • 2005-01 Special features of structural interaction in (AlGaIn)N/GaN heterostructures used as dislocation filters in SEMICONDUCTORS
  • 2004-11 MOCVD-grown AlGaN/GaN heterostructures with high electron mobility in SEMICONDUCTORS
  • 2004-10 Effect of nonradiative recombination centers on photoluminescence efficiency in quantum dot structures in SEMICONDUCTORS
  • 2004-08 Lasing wavelength of quantum dot heterostructures controlled within the 1.3–0.85 μm range by means of high-temperature annealing in TECHNICAL PHYSICS LETTERS
  • 2004-06 Electroluminescent studies of emission characteristics of InGaAsN/GaAs injection lasers in a wide temperature range in SEMICONDUCTORS
  • 2004-06 High-power 1.5 µm InAs-InGaAs quantum dot lasers on GaAs substrates in SEMICONDUCTORS
  • 2004-03 Structural and optical properties of heterostructures with InAs quantum dots in an InGaAsN quantum well grown by molecular-beam epitaxy in SEMICONDUCTORS
  • 2003-12 Lasing at 1.5 µm in quantum dot structures on GaAs substrates in SEMICONDUCTORS
  • 2003-11 Optical properties of MBE-grown ultrathin GaAsN insertions in GaAs matrix in SEMICONDUCTORS
  • 2003-10 Temperature characteristics of low-threshold high-efficiency quantum-dot lasers with the emission wavelength from 1.25 to 1.29 µm in SEMICONDUCTORS
  • 2003-10 Design and technology of vertical-cavity surface-emitting lasers with nonconducting epitaxial mirrors in SEMICONDUCTORS
  • 2003-09 Metamorphic lasers for 1.3-µm spectral range grown on GaAs substrates by MBE in SEMICONDUCTORS
  • 2003-07 Control over the parameters of InAs-GaAs quantum dot arrays in the Stranski-Krastanow growth mode in SEMICONDUCTORS
  • 2003-05 Structural and optical properties of InAs quantum dots in AlGaAs matrix in SEMICONDUCTORS
  • 2003-02 Optical properties of structures with ultradense arrays of Ge QDs in an Si matrix in SEMICONDUCTORS
  • 2003-01 Long-term stability of long-wavelength (>1.25 µm) quantum-dot lasers fabricated on GaAs substrates in TECHNICAL PHYSICS
  • 2002-11 High efficiency (ηD>80%) long wavelength (λ>1.25 μm) quantum dot diode lasers on GaAs substrates in SEMICONDUCTORS
  • 2002-09 Stark effect in vertically coupled quantum dots in InAs-GaAs heterostructures in SEMICONDUCTORS
  • 2002-09 The influence of heat treatment conditions on the evaporation of defect regions in structures with InGaAs quantum dots in the GaAs matrix in SEMICONDUCTORS
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