Gleb G Konovalov

Ontology type: schema:Person     

Person Info


Gleb G



Publications in SciGraph latest 50 shown

  • 2021-07 Uncooled Photodiodes for Detecting Pulsed Infrared Radiation in the Spectral Range of 0.9–1.8 μm in SEMICONDUCTORS
  • 2018-08-22 GaSb/GaAlAsSb Heterostructure Photodiodes for the Near-IR Spectral Range in SEMICONDUCTORS
  • 2018-07-06 Photoconductivity Amplification in a Type-II n-GaSb/InAs/p-GaSb Heterostructure with a Single QW in SEMICONDUCTORS
  • 2018-04-03 Enhancement of Photoconductivity by Carrier Screening Effect in n-GaSb/InAs/p-GaSb Heterostructure with Single Deep Quantum Well in SEMICONDUCTORS
  • 2016-10-11 Enhancement of the spectral sensitivity of photodiodes for the mid-IR spectral range in SEMICONDUCTORS
  • 2015-12-10 Photoelectric properties of photodiodes based on InAs/InAsSbP heterostructures with photosensitive-area diameters of 0.1–2.0 mm in SEMICONDUCTORS
  • 2013-08-07 Photoelectric and luminescence properties of GaSb-Based nanoheterostructures with a deep Al(As)Sb/InAsSb/Al(As)Sb quantum well grown by metalorganic vapor-phase epitaxy in SEMICONDUCTORS
  • 2013-08-07 High-speed photodiodes for the mid-infrared spectral region 1.2–2.4 μm based on GaSb/GaInAsSb/GaAlAsSb heterostructures with a transmission band of 2–5 GHz in SEMICONDUCTORS
  • 2013-05-09 Improvement in the quantum sensitivity of InAs/InAsSb/InAsSbP heterostructure photodiodes in SEMICONDUCTORS
  • 2012-05 Photodiodes based on InAs/InAsSb/InAsSbP heterostructures with quantum efficiency increased by changing directions of reflected light fluxes in TECHNICAL PHYSICS LETTERS
  • 2011-10-26 Room-temperature photodiodes based on InAs/InAs0.88Sb0.12/InAsSbP heterostructures for extended (1.5–4.8 μm) spectral range in TECHNICAL PHYSICS LETTERS
  • 2011-02-20 Photovoltaic detector based on type II heterostructure with deep AlSb/InAsSb/AlSb quantum well in the active region for the midinfrared spectral range in SEMICONDUCTORS
  • 2011-01 Photodiodes based on InAs/InAs0.88Sb0.12/InAsSbP heterostructures for 2.5–4.9 μm spectral range in TECHNICAL PHYSICS LETTERS
  • 2010-05-28 Fast-response p-i-n photodiodes for 0.9–2.4 μm wavelength range in TECHNICAL PHYSICS LETTERS
  • Affiliations

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