Yu M Zadiranov

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Yu M



Publications in SciGraph latest 50 shown

  • 2020-08 Measuring Geometric Parameters of a High-Power Infrared Laser Beam near the Focus for Applications in a Laser-Plasma Short-Wave Radiation Source in OPTICS AND SPECTROSCOPY
  • 2020-01 Micro-profiling of 4H-SiC by Dry Etching to Form a Schottky Barrier Diode in SEMICONDUCTORS
  • 2019-11 Generation of Droplet Quasi-Bessel Beams Using a Semiconductor Laser in OPTICS AND SPECTROSCOPY
  • 2019-10 Studying the Formation of Antireflection Coatings on Multijunction Solar Cells in TECHNICAL PHYSICS LETTERS
  • 2019-02 Highly Efficient Semiconductor Emitter of Single Photons in the Red Spectral Range in JETP LETTERS
  • 2018-10-15 Absolutely Calibrated Spectrally Resolved Measurements of Xe Laser Plasma Radiation Intensity in the EUV Range in TECHNICAL PHYSICS
  • 2018-10-15 Lasing in 9.6-μm Quantum Cascade Lasers in TECHNICAL PHYSICS
  • 2018-10 Generation of Droplet Bessel Beams Using a Semiconductor Laser in TECHNICAL PHYSICS LETTERS
  • 2018-09 Quantum-Cascade Lasers Generating at the 4.8-μm Wavelength at Room Temperature in TECHNICAL PHYSICS LETTERS
  • 2018-08 Single-Photon Emitter at 80 K Based on a Dielectric Nanoantenna with a CdSe/ZnSe Quantum Dot in JETP LETTERS
  • 2018-06-07 On the Fabrication and Study of Lattice-Matched Heterostructures for Quantum Cascade Lasers in SEMICONDUCTORS
  • 2018-01 The Influence of Cavity Design on the Linewidth of Near-IR Single-Mode Vertical-Cavity Surface-Emitting Lasers in TECHNICAL PHYSICS LETTERS
  • 2018-01 Investigation of the Modified Structure of a Quantum Cascade Laser in SEMICONDUCTORS
  • 2018-01 A Design and New Functionality of Antiwaveguiding Vertical-Cavity Surface-Emitting Lasers for a Wavelength of 850 nm in TECHNICAL PHYSICS LETTERS
  • 2018-01 Emission-Line Width and α-Factor of 850-nm Single-Mode Vertical-Cavity Surface-Emitting Lasers Based on InGaAs/AlGaAs Quantum Wells in SEMICONDUCTORS
  • 2017-09-03 Optical properties of metamorphic hybrid heterostuctures for vertical-cavity surface-emitting lasers operating in the 1300-nm spectral range in SEMICONDUCTORS
  • 2017-01 InGaN/GaN light-emitting diode microwires of submillimeter length in SEMICONDUCTORS
  • 2016-10-11 Laser characteristics of an injection microdisk with quantum dots and its free-space outcoupling efficiency in SEMICONDUCTORS
  • 2016-10-11 On the gain properties of “thin” elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm in SEMICONDUCTORS
  • 2016-10-11 Polarization characteristics of 850-nm vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal oxide current aperture in SEMICONDUCTORS
  • 2016-10 Laser generation at 1.3 μm in vertical microcavities containing InAs/InGaAs quantum dot arrays under optical pumping in TECHNICAL PHYSICS LETTERS
  • 2016-10 A study of distributed dielectric bragg reflectors for vertically emitting lasers of the near-IR range in TECHNICAL PHYSICS LETTERS
  • 2016-06-17 Switching between the mode-locking and Q-switching modes in two-section QW lasers upon a change in the absorber properties due to the Stark effect in SEMICONDUCTORS
  • 2016-03-31 Microdisk Injection Lasers for the 1.27-μm Spectral Range in SEMICONDUCTORS
  • 2016-01 Effect of a terahertz cavity on the conductivity of short-period GaAs/AlAs superlattices in JETP LETTERS
  • 2015-12-05 Innovative Field Emitters for High-Voltage Electronic Devices in RADIOPHYSICS AND QUANTUM ELECTRONICS
  • 2015-11 Cylindrical multilayer metal–dielectric structures in TECHNICAL PHYSICS LETTERS
  • 2015-10-13 Emission spectra of a laser based on an In(Ga)As/GaAs quantum-dot superlattice in SEMICONDUCTORS
  • 2015-10 Power increase in Q-switched two-sectional quantum well lasers due to Stark effect in TECHNICAL PHYSICS LETTERS
  • 2014-12-02 Effect of the photon lifetime on the characteristics of 850-nm vertical-cavity surface-emitting lasers with fully doped distributed Bragg reflectors and an oxide current aperture in SEMICONDUCTORS
  • 2014-10-28 Experimental Demonstration of Reduced Light Absorption by Intracavity Metallic Layers in Tamm Plasmon-based Microcavity in PLASMONICS
  • 2014-08-31 The effect of a UV preionization pulse on short-wave radiation output from a laser-produced-plasma source with a Xe gas-jet target in TECHNICAL PHYSICS LETTERS
  • 2014-08-06 Influence of GaAs spacer-layer thickness on quantum coupling and optical polarization in a ten-layer system of vertically correlated InAs/GaAs quantum dots in SEMICONDUCTORS
  • 2013-09-28 Laser generation in microdisc resonators with InAs/GaAs quantum dots transferred on a silicon substrate in TECHNICAL PHYSICS LETTERS
  • 2013-07-06 Single-spatial-mode semiconductor VCSELs with a nonplanar upper dielectric DBR in SEMICONDUCTORS
  • 2013-06-10 Influence of optical losses on the dynamic characteristics of linear arrays of near-infrared vertical-cavity surface-emitting lasers in SEMICONDUCTORS
  • 2013-04-17 Growth specifics of GaAs nanowires in mesa in PHYSICS OF THE SOLID STATE
  • 2013-03-14 Integrated characterization of multilayer periodic systems with nanosized layers as applied to Mo/Si structures in PHYSICS OF THE SOLID STATE
  • 2012-12-06 Study of the structure and parameters of a KrF excimer laser beam in TECHNICAL PHYSICS
  • 2012-08-06 High-temperature lasing in a microring laser with an active region based on InAs/InGaAs quantum dots in SEMICONDUCTORS
  • 2012-04 The effect of barrier width in coupled asymmetric double quantum well structure on passive mode-locking region of existence in TECHNICAL PHYSICS LETTERS
  • 2012-01-07 Polarization dependences of electroluminescence and absorption of vertically correlated InAs/GaAs QDs in SEMICONDUCTORS
  • 2011-09-17 A decrease in ohmic losses and an increase in power in GaSb photovoltaic converters in SEMICONDUCTORS
  • 2011-08-18 Room-temperature optical absorption in the InAs/GaAs quantum-dot superlattice under an electric field in SEMICONDUCTORS
  • 2011-06-18 Matrices of 960-nm vertical-cavity surface-emitting lasers in SEMICONDUCTORS
  • 2009-04-28 Absorption in laser structures with coupled and uncoupled quantum dots in an electric field at room temperature in SEMICONDUCTORS
  • 2008-09-30 Effect of excitation level on the optical properties of GaAs/AlGaO microdisks with an active region containing InAs quantum dots in SEMICONDUCTORS
  • 2008-05 Optically pumped midinfrared (λ = 3.6 μm) light-emitting diodes based on indium arsenide with photonic crystals in TECHNICAL PHYSICS LETTERS
  • 2007-06 Free-standing optical filters for a nanolithography source operating in the 12–15 nm wavelength range in TECHNICAL PHYSICS LETTERS
  • 2006-11 P-i-n structures based on high-ohmic gettered gallium arsenide for α particle detectors in TECHNICAL PHYSICS LETTERS
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