Martin Stutzmann


Ontology type: schema:Person     


Person Info

NAME

Martin

SURNAME

Stutzmann

Publications in SciGraph latest 50 shown

  • 2012-01 Charge state manipulation of qubits in diamond in NATURE COMMUNICATIONS
  • 2010 Security Applications of Diodes with Unique Current-Voltage Characteristics in FINANCIAL CRYPTOGRAPHY AND DATA SECURITY
  • 2010 Towards Electrical, Integrated Implementations of SIMPL Systems in INFORMATION SECURITY THEORY AND PRACTICES. SECURITY AND PRIVACY OF PERVASIVE SYSTEMS AND SMART DEVICES
  • 2007-07-02 Visible luminescence from silicon in FESTKÖRPERPROBLEME 32
  • 2007-06-28 Charge-induced structural relaxation in hydrogenated amorphous silicon in FESTKÖRPERPROBLEME 28
  • 2006-12 Electrical detection of coherent 31P spin quantum states in NATURE PHYSICS
  • 2006 AlGaN/GaN Electrolyte-Gate Field-Effect Transistors as Transducers for Bioelectronic Devices in ADVANCES IN SOLID STATE PHYSICS
  • 2004-10 Protein-modified nanocrystalline diamond thin films for biosensor applications in NATURE MATERIALS
  • 2004 Novel Algan Heterostructures for UV Sensors and Leds in UV SOLID-STATE LIGHT EMITTERS AND DETECTORS
  • 2004 Hydrogen and Magnetism in $Ga_{1-x}Mn_{x}As$ in ADVANCES IN SOLID STATE PHYSICS 44
  • 2003-02 Charge Transfer at the Mn Acceptor Level in GaN in JOURNAL OF SUPERCONDUCTIVITY
  • 2003-02 Ferromagnetic Resonance in Ga1−xMnxAs in JOURNAL OF SUPERCONDUCTIVITY
  • 2002-11 Erbium electroluminescence in p-i-n amorphous hydrogenated silicon structures in SEMICONDUCTORS
  • 2001-10 Polygermanosilyne Calcium Hydroxide Intercalation Compounds Formed by Topotactic Transformation of Ca(Si1 − xGex)2 Alloy Zintl Phases in Ambient Atmosphere in MONATSHEFTE FÜR CHEMIE - CHEMICAL MONTHLY
  • 2001 AlGaN/GaN lateral polarity heterostructures in PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS PART I
  • 2001 Group III-Nitride based Gas Sensors for Exhaust Gas Monitoring in TRANSDUCERS ’01 EUROSENSORS XV
  • 1999 Herstellung und Charakterisierung epitaktischer CaSi in MONATSHEFTE FÜR CHEMIE - CHEMICAL MONTHLY
  • 1999-01 Preparation and Characterization of Epitaxial CaSi2 and Siloxene Layers on Silicon in MONATSHEFTE FÜR CHEMIE - CHEMICAL MONTHLY
  • 1999 Preparation and Characterization of Epitaxial CaSi2 and Siloxene Layers on Silicon in SILICON CHEMISTRY
  • 1996 Lateral Structuring of Thin Semiconductor Films by Laser Interference Techniques in LASER IN FORSCHUNG UND TECHNIK / LASER IN RESEARCH AND ENGINEERING
  • 1993 Optical Properties of Siloxene and Siloxene Derivates in OPTICAL PHENOMENA IN SEMICONDUCTOR STRUCTURES OF REDUCED DIMENSIONS
  • 1993 Optical Properties of C60-Diethyl Ether Clathrate Single Crystals in ELECTRONIC PROPERTIES OF FULLERENES
  • 1993 Preparation and Properties of Thin Siloxene Films on Silicon in OPTICAL PROPERTIES OF LOW DIMENSIONAL SILICON STRUCTURES
  • 1992-06 New growth technique for luminescent layers on silicon in APPLIED PHYSICS A
  • 1991-07 A comparison of hydrogen incorporation and effusion in doped crystalline silicon, germanium, and gallium arsenide in APPLIED PHYSICS A
  • 1987 Electron Correlation Energies in Hydrogenated Amorphous Silicon in DISORDERED SEMICONDUCTORS
  • 1985 Electron Spin Resonance of Amorphous GaAs, GaP, and InP in PROCEEDINGS OF THE 17TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS
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