S M Dzyadukh


Ontology type: schema:Person     


Person Info

NAME

S M

SURNAME

Dzyadukh

Publications in SciGraph latest 50 shown

  • 2018-09 Admittance of MIS Structures Based on MBE Hg1 – xCdxTe (x = 0.21–0.23) in a Wide Temperature Range in JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS
  • 2018-05 Influence of the Compositional Grading on Concentration of Majority Charge Carriers in Near-Surface Layers of n(p)-HgCdTe Grown by Molecular Beam Epitaxy in JOURNAL OF ELECTRONIC MATERIALS
  • 2018-04 Generation of Surface Defects in Epitaxial CdxHg1–xTe Layers by Soft X-ray Radiation of Laser Plasma in RUSSIAN PHYSICS JOURNAL
  • 2018-03 Admittance of MIS-Structures Based on HgCdTe with a Double-Layer CdTe/Al2O3 Insulator in RUSSIAN PHYSICS JOURNAL
  • 2018-03 Impact of the Graded-Gap Layer on the Admittance of MIS Structures Based on MBE-Grown n-Hg1 – xCdxTe (x = 0.22–0.23) with the Al2O3 Insulator in JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS
  • 2017-12 Temperature spectra of conductance of Ge/Si p-i-n structures with Ge quantum dots in NANOSCALE RESEARCH LETTERS
  • 2017-06 Temperature Dependences of the Product of the Differential Resistance by the Area in MIS-Structures Based on CdxHg1–xTe Grown by Molecularbeam Epitaxy on Alternative Si and GaAs Substrates in RUSSIAN PHYSICS JOURNAL
  • 2017-05 Electron Concentration in the Near-Surface Graded-Gap Layer of MBE n-Hg1–xCdxTe (x = 0.22–0.40) Determined from the Capacitance Measurements of MIS-Structures in RUSSIAN PHYSICS JOURNAL
  • 2016-12 Admittance Investigation of MIS Structures with HgTe-Based Single Quantum Wells in NANOSCALE RESEARCH LETTERS
  • 2016-11 Temperature and Field Dependences of Parameters of the Equivalent Circuit Elements of MIS Structures Based on MBE n-Hg0.775Cd0.225Te in the Strong Inversion Mode in RUSSIAN PHYSICS JOURNAL
  • 2016-06 Peculiarities of Determining the Dopant Concentration in the Near-Surface Layer of a Semiconductor by Measuring the Admittance of MIS Structures Based on P-Hg0.78Cd0.22Te Grown by Molecular Beam Epitaxy in RUSSIAN PHYSICS JOURNAL
  • 2016-02 Dopant in Near-Surface Semiconductor Layers of Metal–Insulator–Semiconductor Structures Based on Graded-Gap p-Hg0.78Cd0.22Te Grown by Molecular-Beam Epitaxy in JOURNAL OF ELECTRONIC MATERIALS
  • 2015-11 Effect of Pulse Nanosecond Volume Discharge in Air at Atmospheric Pressure on Electrical Properties of Mis Structures Based on p-HgCdTe Grown by Molecular Beam Epitaxy in RUSSIAN PHYSICS JOURNAL
  • 2015-08 Hysteresis Phenomena in mis Structures Based on Graded-Gap MBE Hgcdte with a Two-Layer Plasma-Chemical Insulator SIO2/SI3N4 in RUSSIAN PHYSICS JOURNAL
  • 2014-12 Influence of composition of the near-surface graded-gap layer on the admittance of metal-insulator-semiconductor structures based on graded-gap MBE n-Hg1−xCdxTe in wide temperature range in OPTO-ELECTRONICS REVIEW
  • 2014-12 Admittance in MIS Structures Based on Graded-GAP MBE p-Hg1–хCdхTe (x = 0.22–0.23) in the Strong Inversion Mode in RUSSIAN PHYSICS JOURNAL
  • 2014-10 Total Conductance of MIS Structures Based on Graded-Gap p-Hg1–хCdхTe (x =0.22–0.23) Grown by Molecular Beam Epitaxy in RUSSIAN PHYSICS JOURNAL
  • 2014-09 Special Features of Admittance in Mis Structures Based on Graded-Gap MBE n-Hg1–xCdxTe (x = 0.31–0.32) in a Temperature Range OF 8–300 K in RUSSIAN PHYSICS JOURNAL
  • 2014-08 Differential Resistance of Space Charge Region in MIS Structures Based on Graded-Gap MBE n-Hg1–xCdxTe (x = 0.23) in a Wide Temperature Range in RUSSIAN PHYSICS JOURNAL
  • 2013-12 An Investigation into the Admittance of MIS-Structures Based on MBE HgCdTe with Quantum Wells in RUSSIAN PHYSICS JOURNAL
  • 2013-01 The photoelectrical properties of MIS structures based on heteroepitaxial n-Hg1–xCdxTe (x = 0.21–0.23) in RUSSIAN PHYSICS JOURNAL
  • 2011-08 The electrical characteristics of MBE n-Hg1–xCdxTe (x = 0.29–0.31) MIS structures with sharp inhomogeneities in composition in RUSSIAN PHYSICS JOURNAL
  • 2010-09 Capacitance-voltage characteristics of MIS-structures on the basis of graded-band MBE Hg1−xCdxTe at passivation by epitaxially grown in situ CdTe in OPTO-ELECTRONICS REVIEW
  • 2010-09 Influence of near-surface graded-gap layers on electrical characteristics of MIS-structures based on MBE grown HgCdTe in OPTO-ELECTRONICS REVIEW
  • 2010-07 Electrophysical characteristics of MIS structures based on graded band-gap MBE HgCdTe with grown in situ CdTe as a dielectric in RUSSIAN PHYSICS JOURNAL
  • 2009-10 Investigation into MIS structures based on gradedband-gap hetero-epitaxial HgCdTe grown by molecular-beam epitaxy using photo-emf and conductivity methods in RUSSIAN PHYSICS JOURNAL
  • 2006-10 Photoelectrical characteristics of MIS structures on the basis of graded-band-gap n-HgCdTe (x = 0.21–0.23) in RUSSIAN PHYSICS JOURNAL
  • 2005-06 The Influence of Resistance of the Epitaxial-Film Volume on the Capacity-Voltage Characteristics of the HgCdTe/AOF and HgCdTe/SiO2/Si3N4 MIS Structures in RUSSIAN PHYSICS JOURNAL
  • Affiliations

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