W V Lundin


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Person Info

NAME

W V

SURNAME

Lundin

Publications in SciGraph latest 50 shown

  • 2018-12 Ultrathin Barrier InAlN/GaN Heterostructures for HEMTs in SEMICONDUCTORS
  • 2018-10 Selective Epitaxial Growth of III–N Structures Using Ion-Beam Nanolithography in SEMICONDUCTORS
  • 2017-01 InGaN/GaN light-emitting diode microwires of submillimeter length in SEMICONDUCTORS
  • 2016-09 Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs in SEMICONDUCTORS
  • 2016-08 Elastic strains and delocalized optical phonons in AlN/GaN superlattices in SEMICONDUCTORS
  • 2016-05 Semi-insulating GaN:C epilayers grown by metalorganic vapor phase epitaxy using propane as a carbon source in TECHNICAL PHYSICS LETTERS
  • 2016-04 The influence of growth conditions on the surface morphology and development of mechanical stresses in Al(Ga)N layers during metalorganic vapor phase epitaxy in TECHNICAL PHYSICS LETTERS
  • 2016-02 Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation in SEMICONDUCTORS
  • 2015-11 Effect of the design of the active region of monolithic multi-color LED heterostructures on their spectra and emission efficiency in SEMICONDUCTORS
  • 2015-10 The influence of aluminum content on the surface morphology of heavily doped (Al)GaN mesastrip structures grown by selective metalorganic vapor phase epitaxy in TECHNICAL PHYSICS LETTERS
  • 2015-03 MOVPE of III-N LED structures with short technological process in TECHNICAL PHYSICS LETTERS
  • 2014-05 Synthesis of GaN nano- and microwire crystals induced by a titanium nanolayer in TECHNICAL PHYSICS LETTERS
  • 2014-05 Properties of InGaN/GaN heterostructures obtained using growth interruption under various conditions in TECHNICAL PHYSICS LETTERS
  • 2014-01 Dependence of the efficiency of III-N blue LEDs on the structural perfection of GaN epitaxial buffer layers in SEMICONDUCTORS
  • 2012-10 InGaN/GaN heterostructures grown by submonolayer deposition in SEMICONDUCTORS
  • 2012-10 Composite InGaN/GaN/InAlN heterostructures emitting in the yellow-red spectral region in SEMICONDUCTORS
  • 2012-03 Group-III-nitride-based light-emitting diode on silicon substrate with epitaxial nanolayer of silicon carbide in TECHNICAL PHYSICS LETTERS
  • 2012-03 Double-cross epitaxial overgrowth of nonpolar gallium nitride layers in TECHNICAL PHYSICS LETTERS
  • 2011-08 Specific features of gallium nitride selective epitaxy in round windows in TECHNICAL PHYSICS LETTERS
  • 2011-02 Influence of hydrogen on local phase separation in InGaN thin layers and properties of light-emitting structures based on them in SEMICONDUCTORS
  • 2010-12 Study of tunneling transport of carriers in structures with an InGaN/GaN active region in SEMICONDUCTORS
  • 2010-12 High growth rate of AlN in a planetary MOVPE reactor in TECHNICAL PHYSICS LETTERS
  • 2010-11 High-efficiency InGaN/GaN/AlGaN light-emitting diodes with short-period InGaN/GaN superlattice for 530–560 nm range in TECHNICAL PHYSICS LETTERS
  • 2010-10 Formation of composite InGaN/GaN/InAlN quantum dots in SEMICONDUCTORS
  • 2010-07 The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes in SEMICONDUCTORS
  • 2010-06 A monolithic white LED with an active region based on InGaN QWs separated by short-period InGaN/GaN superlattices in SEMICONDUCTORS
  • 2010-06 Optical and structural properties of InGaN/GaN short-period superlattices for the active region of light- emitting diodes in SEMICONDUCTORS
  • 2010-01 Effect of pressure in the growth reactor on the properties of the active region in the InGaN/GaN light-emitting diodes in SEMICONDUCTORS
  • 2010-01 Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes in SEMICONDUCTORS
  • 2009-11 Indium-rich island structures formed by in-situ nanomasking technology in TECHNICAL PHYSICS LETTERS
  • 2009-07 Effect of carrier gas and doping profile on the surface morphology of MOVPE grown heavily doped GaN:Mg layers in SEMICONDUCTORS
  • 2009-06 Effect of strain relaxation on active-region formation in InGaN/(Al)GaN heterostructures for green LEDs in SEMICONDUCTORS
  • 2008-11 Vapor phase epitaxy of aluminum nitride from trimethylaluminum and molecular nitrogen in TECHNICAL PHYSICS LETTERS
  • 2008-11 InGaAlN heterostructures for LEDs grown on patterned sapphire substrates in TECHNICAL PHYSICS LETTERS
  • 2008-02 Effect of hydrogen on anisotropy of the p-GaN growth rate in the case of side-wall MOCVD in SEMICONDUCTORS
  • 2006-12 Correlation between luminescent properties and structure organization in AlGaN/GaN superlattices annealed after erbium ion implantation in TECHNICAL PHYSICS
  • 2005-04 Influence of the carrier gas composition on metalorganic vapor phase epitaxy of gallium nitride in TECHNICAL PHYSICS LETTERS
  • 2005-01 Special features of structural interaction in (AlGaIn)N/GaN heterostructures used as dislocation filters in SEMICONDUCTORS
  • 2004-09 Low-frequency noise in gallium nitride epitaxial layers with different degrees of order of mosaic structure in SEMICONDUCTORS
  • 2004-06 Growth of AlGaN epitaxial layers and AlGaN/GaN superlattices by metal-organic chemical vapor deposition in SEMICONDUCTORS
  • 2004 MOCVD Growth of AlGaN Epilayers and AlGaN/GaN SLs in a Wide Composition Range in UV SOLID-STATE LIGHT EMITTERS AND DETECTORS
  • 2001-01 High-quality ZnO/GaN/α-Al2O3 heteroepitaxial structures grown by CVD in TECHNICAL PHYSICS LETTERS
  • 2001 Formation of GaAsN nanoinsertions in a GaN matrix in PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS PART I
  • 2000-11 Internal microstrain and distribution of composition and cathodoluminescence over lapped AlxGa1−xN epilayers on sapphire in SEMICONDUCTORS
  • 2000-04 Lasing in the vertical direction in InGaN/GaN/AlGaN structures with InGaN quantum dots in SEMICONDUCTORS
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