Boris Ya Ber

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Boris Ya



Publications in SciGraph latest 50 shown

  • 2020-10 Investigation of the Effect of Doping on Transition Layers of Anisotype GaInAsP and InP Heterostructures Obtained by the Method of MOCVD in TECHNICAL PHYSICS LETTERS
  • 2020-09 Quantification of Hydrogen in Natural Diamond by Secondary Ion Mass Spectrometry (SIMS) in DOKLADY EARTH SCIENCES
  • 2020-03 Development and Study of the p–i–n GaAs/AlGaAs Tunnel Diodes for Multijunction Converters of High-Power Laser Radiation in SEMICONDUCTORS
  • 2019-12 Quantum Yield of a Silicon XUV Avalanche Photodiode in the 320–1100 nm Wavelength Range in TECHNICAL PHYSICS LETTERS
  • 2019-11-06 Investigation of Composition Uniformity in Thickness of GaInAsP Layers Grown on InP Substrates by Vapor-Phase Epitaxy in SEMICONDUCTORS
  • 2019-10 Luminescence Properties of GaInAsP Layers with Graded Composition–Depth Profiles Grown on InP Substrates in TECHNICAL PHYSICS LETTERS
  • 2019-08 Undoped High-Resistance GaN Buffer Layer for AlGaN/GaN High-Electron-Mobility Transistors in TECHNICAL PHYSICS LETTERS
  • 2019-08 Characteristics of a Silicon Avalanche Photodiode for the Near-IR Spectral Range in TECHNICAL PHYSICS LETTERS
  • 2018-12 A Study of the Composition Gradient of GaInAsP Layers Formed on InP by Vapor-Phase Epitaxy in TECHNICAL PHYSICS LETTERS
  • 2018-09-06 Nanostructure Growth in the Ga(In)AsP–GaAs System under Quasi-Equilibrium Conditions in SEMICONDUCTORS
  • 2018-07 The Effect of Dose of Nitrogen-Ion Implantation on the Concentration of Point Defects Introduced into GaAs Layers in TECHNICAL PHYSICS LETTERS
  • 2018-02-05 Change in the Character of Biaxial Stresses with an Increase in x from 0 to 0.7 in AlxGa1 – xN:Si Layers Obtained by Ammonia Molecular Beam Epitaxy in SEMICONDUCTORS
  • 2018-01 Mobility of the Two-Dimensional Electron Gas in DA-pHEMT Heterostructures with Various δ–n-Layer Profile Widths in SEMICONDUCTORS
  • 2017-10 A study of transition regions in InAsPSb/InAs heterostructures grown by MOVPE in TECHNICAL PHYSICS LETTERS
  • 2017-08-25 Effects of irradiation with 8-MeV protons on n-3C-SiC heteroepitaxial layers in SEMICONDUCTORS
  • 2017-05-18 Formation of a p-type emitter with the involvement of surfactants in GaAs photoelectric converters in SEMICONDUCTORS
  • 2016-07-06 Electrochemical lithiation of silicon with varied crystallographic orientation in SEMICONDUCTORS
  • 2016-06 Solar-blind AlxGa1–xN (x > 0.45) p–i–n photodiodes with a polarization-p-doped emitter in TECHNICAL PHYSICS LETTERS
  • 2016-05 Semi-insulating GaN:C epilayers grown by metalorganic vapor phase epitaxy using propane as a carbon source in TECHNICAL PHYSICS LETTERS
  • 2016-03 Experimental study of cyclic action of plasma on tungsten in TECHNICAL PHYSICS
  • 2015-12 On the relationship between radiation-stimulated photoluminescence and nitrogen atoms in p-4H-SiC in TECHNICAL PHYSICS LETTERS
  • 2014-09-24 A silicon donor layer in heavily doped GaN in BULLETIN OF THE RUSSIAN ACADEMY OF SCIENCES: PHYSICS
  • 2014-08-31 Decrease in the binding energy of donors in heavily doped GaN:Si layers in SEMICONDUCTORS
  • 2014-04 Photoresponse of a silicon multipixel photon counter in the vacuum ultraviolet range in TECHNICAL PHYSICS LETTERS
  • 2014-01-05 Transport parameters and optical properties of selectively doped Ga(Al)As/Zn(Mn)Se heterovalent structures with a two-dimensional hole channel in SEMICONDUCTORS
  • 2013-02-19 Photoresponse recovery in silicon photodiodes upon VUV irradiation in SEMICONDUCTORS
  • 2013-02-19 High-efficiency GaSb photocells in SEMICONDUCTORS
  • 2012-09 A study of vacuum-ultraviolet stability of silicon photodiodes in TECHNICAL PHYSICS LETTERS
  • 2011-06-18 Electrochemical capacitance-voltage profiling of the free-carrier concentration in HEMT heterostructures based on InGaAs/AlGaAs/GaAs compounds in SEMICONDUCTORS
  • 2011-06-18 Evolution of the deformation state and composition as a result of changes in the number of quantum wells in multilayered InGaN/GaN structures in SEMICONDUCTORS
  • 2011-03-30 Effect of the silicon doping level and features of nanostructural arrangement on decrease in external quantum efficiency in InGaN/GaN light-emitting diodes with increasing current in SEMICONDUCTORS
  • 2010-11-12 Mass transfer in thermo-electric-field modification of glass-metal nanocomposites in TECHNICAL PHYSICS
  • 2010-01-26 Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes in SEMICONDUCTORS
  • 2009-07-11 Effect of carrier gas and doping profile on the surface morphology of MOVPE grown heavily doped GaN:Mg layers in SEMICONDUCTORS
  • 2007-03 Dislocation-related luminescence in silicon, caused by implantation of oxygen ions and subsequent annealing in SEMICONDUCTORS
  • 2006-08 Specific features of transmutational doping of 30Si-enriched silicon crystals with phosphorus: Studies by the method of electron spin resonance in SEMICONDUCTORS
  • 2006-06 Neutron transmutation doping of silicon 30Si monoisotope with phosphorus in TECHNICAL PHYSICS LETTERS
  • 2005-12 Probing of the shallow donor and acceptor wave functions in silicon carbide and silicon through an EPR study of crystals with a modified isotopic composition in PHYSICS OF THE SOLID STATE
  • 2005-01 MBE-grown Si: Er light-emitting structures: Effect of epitaxial growth conditions on impurity concentration and photoluminescence in PHYSICS OF THE SOLID STATE
  • 2004-10 SIMS profiling of GaAs/δ-AlAs/GaAs/… heterostructures using polyatomic ionized oxygen clusters in TECHNICAL PHYSICS LETTERS
  • 2004-03 Determination of Nitrogen in Silicon Carbide by Secondary Ion Mass Spectrometry in JOURNAL OF ANALYTICAL CHEMISTRY
  • 2003-01 Erbium and Germanium Profiles in Si1 – xGex Layers Grown by Silicon Sublimation-Source Molecular-Beam Epitaxy in GeH4 in INORGANIC MATERIALS
  • 2002-12 Isotope-pure silicon layers grown by MBE in SEMICONDUCTORS
  • 2002-12 Isotope-pure 28Si layers grown by VPE in SEMICONDUCTORS
  • 2002-06 Separation of Silicon Isotopes by Silicon Tetrafluoride–Silane Technology in INORGANIC MATERIALS
  • 2002-06 Luminescent Si-Ge solid solution layers ER-doped in molecular-beam epitaxy in SEMICONDUCTORS
  • 2001-08 Preparation and properties of isotopically pure polycrystalline silicon in SEMICONDUCTORS
  • 2001-01 Optical properties of nanodiamond layers in PHYSICS OF THE SOLID STATE
  • 1999-10 Distinctive features of molecular-beam epitaxial growth of silicon on Si (100) surfaces in the presence of arsenic in SEMICONDUCTORS
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