N V Kryzhanovskaya


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Person Info

NAME

N V

SURNAME

Kryzhanovskaya

Publications in SciGraph latest 50 shown

  • 2016-10 Laser generation at 1.3 μm in vertical microcavities containing InAs/InGaAs quantum dot arrays under optical pumping in TECHNICAL PHYSICS LETTERS
  • 2013-12 Spectral dependence of the linewidth enhancement factor in quantum dot lasers in SEMICONDUCTORS
  • 2013-10 Room-temperature lasing in microring cavities with an InAs/InGaAs quantum-dot active region in SEMICONDUCTORS
  • 2012-08 High-temperature lasing in a microring laser with an active region based on InAs/InGaAs quantum dots in SEMICONDUCTORS
  • 2012-08 Effect of asymmetric barrier layers in the waveguide region on the temperature characteristics of quantum-well lasers in SEMICONDUCTORS
  • 2011-07 Effect of AlGaAs-(AlGa)xOy pedestal parameters on characteristics of a microdisk laser with active region based on InAs/InGaAs quantum dots in SEMICONDUCTORS
  • 2010-10 Formation of composite InGaN/GaN/InAlN quantum dots in SEMICONDUCTORS
  • 2010-07 Structural and optical properties of InAlN/GaN distributed Bragg reflectors in SEMICONDUCTORS
  • 2010-06 A monolithic white LED with an active region based on InGaN QWs separated by short-period InGaN/GaN superlattices in SEMICONDUCTORS
  • 2010-06 Optical and structural properties of InGaN/GaN short-period superlattices for the active region of light- emitting diodes in SEMICONDUCTORS
  • 2008-12 High-gain injection quantum-dot lasers operating at wavelengths above 1300 nm in TECHNICAL PHYSICS LETTERS
  • 2008-07 Methods of controlling the emission wavelength in InAs/GaAsN/InGaAsN heterostructures on GaAs substrates in SEMICONDUCTORS
  • 2008-02 Effect of structural design on the optical properties of strain-compensated InAs/InGaAsN/GaAsN superlattices in TECHNICAL PHYSICS LETTERS
  • 2007-07 Metamorphic InAs quantum dots: Photoluminescence features related to cooperative phenomena in the quantum dot-matrix system in TECHNICAL PHYSICS LETTERS
  • 2007-05 Optical properties of strain-compensated InAs/InGaAsN/GaAsN superlattices in TECHNICAL PHYSICS LETTERS
  • 2006-10 Optical study of resonant states in GaNxAs1−x in SEMICONDUCTORS
  • 2006-09 Room-temperature 1.3-μm lasing in a microdisk with quantum dots in SEMICONDUCTORS
  • 2006-04 Optical studies of asymmetric-waveguide submonolayer InGaAs QD microdisks formed by selective oxidation in SEMICONDUCTORS
  • 2006-03 Lasing properties of strain-compensated InAs/InGaAsN/GaAsN heterostructures in 1.3–1.55 μm spectral range in TECHNICAL PHYSICS LETTERS
  • 2006-03 InAs/InGaNAs/GaNAs QW and QD heterostructures emitting at 1.4–1.8 μm in SEMICONDUCTORS
  • 2005-12 Continuous-wave lasing of single-mode metamorphic quantum dot lasers for the 1.5-μm spectral region in SEMICONDUCTORS
  • 2005-10 Nonequilibrium room-temperature carrier distribution in InAs quantum dots overgrown with thin AlAs/InAlAs layers in SEMICONDUCTORS
  • 2005-07 Stresses in selectively oxidized GaAs/(AlGa)xOy structures in SEMICONDUCTORS
  • 2005-06 The optical properties of heterostructures with quantum-confined InGaAsN layers on a GaAs substrate and emitting at 1.3–1.55 μm in SEMICONDUCTORS
  • 2005-01 Optical phenomena in InAs/GaAs heterostructures with doped quantum dots and artificial molecules in SEMICONDUCTORS
  • 2005-01 The engineering and properties of InAs quantum dot molecules in a GaAs matrix in SEMICONDUCTORS
  • 2004-08 Lasing wavelength of quantum dot heterostructures controlled within the 1.3–0.85 μm range by means of high-temperature annealing in TECHNICAL PHYSICS LETTERS
  • 2004-07 Optical and structural properties of InAs quantum dot arrays grown in an InxGa1−xAs matrix on a GaAs substrate in SEMICONDUCTORS
  • 2004-06 High-power 1.5 µm InAs-InGaAs quantum dot lasers on GaAs substrates in SEMICONDUCTORS
  • 2004-04 The effect of exposure to arsenic flow on the optical properties of quantum dot arrays in the InAs/GaAs(100) system in TECHNICAL PHYSICS LETTERS
  • 2004-03 Structural and optical properties of heterostructures with InAs quantum dots in an InGaAsN quantum well grown by molecular-beam epitaxy in SEMICONDUCTORS
  • 2004-03 Dependence of structural and optical properties of QD arrays in an InAs/GaAs system on surface temperature and growth rate in SEMICONDUCTORS
  • 2003-11 Optical properties of MBE-grown ultrathin GaAsN insertions in GaAs matrix in SEMICONDUCTORS
  • 2003-09 Metamorphic lasers for 1.3-µm spectral range grown on GaAs substrates by MBE in SEMICONDUCTORS
  • 2003-08 Quantum dots in InAs layers of subcritical thickness on GaAs(100) in TECHNICAL PHYSICS LETTERS
  • 2003-07 Theoretical and experimental study of the effect of InAs growth rate on the properties of QD arrays in InAs/GaAs system in SEMICONDUCTORS
  • 2002-11 Room-temperature photoluminescence at 1.55 μm from heterostructures with InAs/InGaAsN quantum dots on GaAs substrates in TECHNICAL PHYSICS LETTERS
  • 2002-09 Effect of carrier localization on the optical properties of MBE-grown GaAsN/GaAs heterostructures in SEMICONDUCTORS
  • 2002-09 The influence of heat treatment conditions on the evaporation of defect regions in structures with InGaAs quantum dots in the GaAs matrix in SEMICONDUCTORS
  • 2002-05 Photoluminescence in the 1.55 μm wavelength range in the InGaAs/GaAs system with quantum dots and wells in TECHNICAL PHYSICS LETTERS
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