В В Lundin


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Lundin

Publications in SciGraph latest 50 shown

  • 2018-07 The Effect of the Method by Which a High-Resistivity GaN Buffer Layer Is Formed on Properties of InAlN/GaN and AlGaN/GaN Heterostructures with 2D Electron Gas in TECHNICAL PHYSICS LETTERS
  • 2018-07 Diversity of Properties of Device Structures Based on Group-III Nitrides, Related to Modification of the Fractal-Percolation System in SEMICONDUCTORS
  • 2017-09 Photonic-crystal waveguide for the second-harmonic generation in PHYSICS OF THE SOLID STATE
  • 2016-12 Theoretical and experimental studies of the current–voltage and capacitance–voltage of HEMT structures and field-effect transistors in SEMICONDUCTORS
  • 2016-11 Specific features of proton interaction with transistor structures having a 2D AlGaN/GaN channel in TECHNICAL PHYSICS LETTERS
  • 2016-11 Optical spectroscopy of a resonant Bragg structure with InGaN/GaN quantum wells in SEMICONDUCTORS
  • 2016-10 Metamaterial for efficient second harmonic generation in TECHNICAL PHYSICS LETTERS
  • 2015-09 Growth and structure of GaN layers on silicon carbide synthesized on a Si substrate by the substitution of atoms: A model of the formation of V-defects during the growth of GaN in PHYSICS OF THE SOLID STATE
  • 2015-08 Capacitance-voltage characteristics of (Al/Ti)/Al2O3/n-GaN MIS structures in SEMICONDUCTORS
  • 2015-01 Optical lattices of excitons in InGaN/GaN quantum well systems in SEMICONDUCTORS
  • 2014-01 Synthesis of an LED structure on the and (0001) faces of mesa stripes grown by selective-area epitaxy in TECHNICAL PHYSICS LETTERS
  • 2013-12 X-ray diffraction study of short-period AlN/GaN superlattices in CRYSTALLOGRAPHY REPORTS
  • 2013-09 Resonance Bragg structure with double InGaN quantum wells in PHYSICS OF THE SOLID STATE
  • 2013-03 Influence of the carrier Gas, trimethylgallium flow, and growth time on the character of the selective epitaxy of GaN in SEMICONDUCTORS
  • 2012-05 Monolithic white LEDs: Approaches, technology, design in JOURNAL OF SURFACE INVESTIGATION: X-RAY, SYNCHROTRON AND NEUTRON TECHNIQUES
  • 2012-02 Emission of terahertz radiation from selectively doped AlGaN/GaN heterostructures under the heating of two-dimensional electrons by an electric field in BULLETIN OF THE RUSSIAN ACADEMY OF SCIENCES: PHYSICS
  • 2010-07 Structural and optical properties of InAlN/GaN distributed Bragg reflectors in SEMICONDUCTORS
  • 2009-06 Phase separation and nonradiative carrier recombination in active regions of light-emitting devices based on InGaN quantum dots in a GaN or AlGaN matrix in SEMICONDUCTORS
  • 2009-01 Study of the formation of InGaN quantum dots on GaN surface in BULLETIN OF THE RUSSIAN ACADEMY OF SCIENCES: PHYSICS
  • 2008-07 InGaN nanoinclusions in an AlGaN matrix in SEMICONDUCTORS
  • 2008-06 Energy characteristics of excitons in structures based on InGaN alloys in SEMICONDUCTORS
  • 2008-02 Photoluminescence of localized excitons in InGan quantum dots in SEMICONDUCTORS
  • 2007-05 Nonequilibrium population of charge carriers in structures with InGaN deep quantum dots in SEMICONDUCTORS
  • 2006-05 The study of lateral carrier transport in structures with InGaN quantum dots in the active region in SEMICONDUCTORS
  • 2005-11 Studies of the electron spectrum in structures with InGaN quantum dots using photocurrent spectroscopy in SEMICONDUCTORS
  • 2005-09 Influence of an increase in the implantation dose of erbium ions and annealing temperature on photoluminescence in AlGaN/GaN superlattices and GaN epitaxial layers in SEMICONDUCTORS
  • 2005-07 The role of built-in electric fields in the InGaN/GaN quantum-well emission in PHYSICS OF THE SOLID STATE
  • 2005-07 Parameters of thulium-doped gallium nitride crystals with wurtzite structure in PHYSICS OF THE SOLID STATE
  • 2005-04 Vibrational spectra of AlN/GaN superlattices: Theory and experiment in PHYSICS OF THE SOLID STATE
  • 2005-04 A study of carrier statistics in InGaN/Gan LED structures in SEMICONDUCTORS
  • 2005-02 Kinetics and inhomogeneous carrier injection in InGaN nanolayers in SEMICONDUCTORS
  • 2004-11 MOCVD-grown AlGaN/GaN heterostructures with high electron mobility in SEMICONDUCTORS
  • 2004-11 Impurity centers of rare-earth ions (Eu, Sm, Er) in GaN wurtzite crystals in SEMICONDUCTORS
  • 2004-10 Low-temperature method of cleaning p-GaN(0001) surfaces for photoemitters with effective negative electron affinity in PHYSICS OF THE SOLID STATE
  • 2004-05 Edge photoluminescence spectra and the intensity of the intracenter f-f transitions in Er-and Sm-doped GaN crystals in PHYSICS OF THE SOLID STATE
  • 2000-06 Specifics of MOCVD formation of InxGa1−xN inclusions in a GaN matrix in SEMICONDUCTORS
  • 2000-03 On an unusual azimuthal orientational relationship in the system gallium nitride layer on spinel substrate in CRYSTALLOGRAPHY REPORTS
  • 1999-07 Investigation of MOVPE-grown GaN layers doped with As atoms in SEMICONDUCTORS
  • 1999-06 Effect of annealing on the optical and structural properties of GaN:Er in SEMICONDUCTORS
  • 1999-06 Lasing in the vertical direction in quantum-size InGaN/GaN multilayer heterostructures in TECHNICAL PHYSICS LETTERS
  • 1999-05 Photoinduced self-organization of gallium nanowires on a GaN surface in TECHNICAL PHYSICS LETTERS
  • 1999-04 Investigation of the growth characteristics of epitaxial GaN layers on sapphire by microcathodoluminescence in TECHNICAL PHYSICS LETTERS
  • 1999-01 Influence of rapid high-temperature anneals on the photoluminescence of erbium-doped GaN in the wavelength interval 1.0–1.6 µm in SEMICONDUCTORS
  • 1997-08 Characteristics of stimulated emission from an optically pumped GaN/AlGaN double heterostructure in TECHNICAL PHYSICS LETTERS
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