D V Marin

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Publications in SciGraph latest 50 shown

  • 2018-08 Photoluminescence of Molecular Beam Epitaxy-Grown Mercury Cadmium Telluride: Comparison of HgCdTe/GaAs and HgCdTe/Si Technologies in JOURNAL OF ELECTRONIC MATERIALS
  • 2018-02-26 Nano-size defects in arsenic-implanted HgCdTe films: a HRTEM study in APPLIED NANOSCIENCE
  • 2016-12 CdHgTe heterostructures for new-generation IR photodetectors operating at elevated temperatures in SEMICONDUCTORS
  • 2016-11 Methodological and instrumental problems in high-precision in situ ellipsometry diagnostics of the mercury cadmium telluride layer composition in molecular beam epitaxy in INSTRUMENTS AND EXPERIMENTAL TECHNIQUES
  • 2016-05 Luminescence in GeOx films containing germanium nanoclusters in NANOTECHNOLOGIES IN RUSSIA
  • 2016-04 Electrophysical properties of CdxHg1–xTe (x = 0.3) films grown by molecular beam epitaxy on Si(013) substrates in PHYSICS OF THE SOLID STATE
  • 2016-02 Defects in mercury-cadmium telluride heteroepitaxial structures grown by molecular-beam epitaxy on silicon substrates in SEMICONDUCTORS
  • 2014-08 Defects in heteroepitaxial CdHgTe/Si layers and their behavior under conditions of implanted p+-n photodiode structure formation in TECHNICAL PHYSICS LETTERS
  • 2014-06 CdHgTe heterostructures on large-area Si(310) substrates for infrared photodetector arrays of the short-wavelength spectral range in SEMICONDUCTORS
  • 2014-05 Phase separation as a basis for the formation of light-emitting silicon nanoclusters in SiOx films irradiated with swift heavy ions in OPTOELECTRONICS, INSTRUMENTATION AND DATA PROCESSING
  • 2014-01 Applying an improved phonon confinement model to the analysis of Raman spectra of germanium nanocrystals in JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS
  • 2013-03 Influence of irradiation with swift heavy ions on multilayer Si/SiO2 heterostructures in SEMICONDUCTORS
  • 2012-06 Anomalous temperature dependence of photoluminescence in GeOx films and GeOx/SiO2 nano-heterostructures in JETP LETTERS
  • 2011-10 Oxidation kinetics of a silicon surface in a plasma of oxygen with inert gases in OPTOELECTRONICS, INSTRUMENTATION AND DATA PROCESSING
  • 2011-10 Formation of light-emitting nanostructures in layers of stoichiometric SiO2 irradiated with swift heavy ions in SEMICONDUCTORS
  • 2011-03 The effect of composition on the formation of light-emitting Si nanostructures in SiOx layers on irradiation with swift heavy ions in SEMICONDUCTORS
  • 2010-05 Modification of germanium nanoclusters in GeOx films during isochronous furnace and pulse laser annealing in TECHNICAL PHYSICS LETTERS
  • 2010-04 Light-emitting Si nanostructures formed in SiO2 on irradiation with swift heavy ions in SEMICONDUCTORS
  • 2010-03 Light-emitting Si nanostructures formed in silica layers by irradiation with swift heavy ions in APPLIED PHYSICS A
  • 2009-11 Structure and optical properties of SiNx: H films with Si nanoclusters produced by low-frequency plasma-enhanced chemical vapor deposition in SEMICONDUCTORS
  • 2009-03 Ellipsometry of GeO2 films with Ge nanoclusters: Influence of the quantum-size effect on refractive index in OPTICS AND SPECTROSCOPY
  • 2009-03 Quasi-direct optical transitions in Ge nanocrystals embedded in GeO2 matrix in JETP LETTERS
  • 2008-09 Effect of the ion-energy loss rate on defect formation during implantation in silicon nanocrystals in SEMICONDUCTORS
  • 2008-06 SiOx layer formation during plasma sputtering of Si and SiO2 targets in SEMICONDUCTORS
  • 2008-04 Structure, phase composition, and optical properties of silicon nanopowders in BULLETIN OF THE RUSSIAN ACADEMY OF SCIENCES: PHYSICS
  • 2008-02 Effect of high-power nanosecond and femtosecond laser pulses on silicon nanostructures in SEMICONDUCTORS
  • 2008-02 Variation in optical-absorption edge in SiNx layers with silicon clusters in SEMICONDUCTORS
  • 2006-10 Electrical properties and photoluminescence of SiOx layers with Si nanocrystals in relation to the SiOx composition in SEMICONDUCTORS
  • 2005-10 Effect of quantum confinement on optical properties of Ge nanocrystals in GeO2 films in SEMICONDUCTORS
  • 2005-08 Coulomb blockade of the conductivity of SiOx films due to one-electron charging of a silicon quantum dot in a chain of electronic states in SEMICONDUCTORS
  • 2005-05 The formation of silicon nanocrystals in SiO2 layers by the implantation of Si ions with intermediate heat treatments in SEMICONDUCTORS
  • 2004-10 Visible photoluminescence from silicon nanopowders produced by silicon evaporation in a high-power electron beam in JETP LETTERS
  • 2003-07 Nanocrystalline silicon films formed under the impact of pulsed excimer laser radiation on polyimide substrates in TECHNICAL PHYSICS LETTERS
  • 2003-04 Photoluminescence of GeO2 films containing germanium nanocrystals in JETP LETTERS
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