Vladimir A Kapitonov

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Vladimir A



Publications in SciGraph latest 50 shown

  • 2016-10 Study of the pulse characteristics of semiconductor lasers with a broadened waveguide at low temperatures (110–120 K) in SEMICONDUCTORS
  • 2013-08 AlGaAs/GaAs diode lasers (1020–1100 nm) with an asymmetric broadened single transverse mode waveguide in SEMICONDUCTORS
  • 2012-10 850-nm diode lasers based on AlGaAsP/GaAs heterostructures in SEMICONDUCTORS
  • 2011-10 Diode lasers emitting at 1220 nm with a highly strained GaInAs quantum well and GaAsP compensating layers MOCVD-grown on a GaAs substrate in SEMICONDUCTORS
  • 2010-02 Effect of the active region thickness on characteristics of semiconductor lasers based on asymmetric AlGaAs/GaAs/InGaAs heterostructures with broadened waveguide in SEMICONDUCTORS
  • 2009-10 Study of optical characteristics of structures with strongly strained InxGa1 − xAs quantum wells in SEMICONDUCTORS
  • 2008-07 High-power laser diodes with an emission wavelength of 835 nm on the basis of various types of heterostructures in SEMICONDUCTORS
  • 2008-03 High-power laser diodes of wavelength 808 nm based on various types of asymmetric heterostructures with an ultrawide waveguide in SEMICONDUCTORS
  • 2007-10 Double-band generation in quantum-well semiconductor laser at high injection levels in SEMICONDUCTORS
  • 2007-08 Saturation of light-current characteristics of high-power laser diodes (λ = 1.0–1.8 μm) under pulse operation in SEMICONDUCTORS
  • 2006-08 Studying the characteristics of pulse-pumped semiconductor 1060-nm lasers based on asymmetric heterostructures with ultrathick waveguides in TECHNICAL PHYSICS LETTERS
  • 2006-06 High-power lasers (λ = 940–980 nm) based on asymmetric GaInAs/GaInAsP/AlGaAs separate-confinement heterostructure in SEMICONDUCTORS
  • 2006-04 Photoluminescence of heterostructures with highly strained GaAs quantum wells in Al0.48In0.52As and Ga0.47In0.53As layers in TECHNICAL PHYSICS LETTERS
  • 2005-12 Photoluminescence of heterostructures with highly strained Ga0.76In0.24As quantum wells separated by GaAsyP1−y compensating barriers in TECHNICAL PHYSICS LETTERS
  • 2005-03 High-power laser diodes based on asymmetric separate-confinement heterostructures in SEMICONDUCTORS
  • 2004-12 Photoluminescence of GaAsP/GaInAsP Type-II heterojunctions in TECHNICAL PHYSICS LETTERS
  • 2003-12 MOCVD GaInAsP/GaInP/AlGaInP laser structures emitting at 780 nm in SEMICONDUCTORS
  • 2003-09 Optical and structural properties of ingaasp miscibility-gap solid solutions grown by MOVPE on GaAs(001) substrates in SEMICONDUCTORS
  • 2002-09 MOCVD-grown InGaAs/GaAs/AlGaAs laser structures with a broad-area contact in SEMICONDUCTORS
  • 2001-11 MOCVD-grown broad area InGaAs/GaAs/InGaP laser diodes in SEMICONDUCTORS
  • 2001-03 Record power characteristics of InGaAs/AlGaAs/GaAs heterostructure lasers in SEMICONDUCTORS
  • 2001-02 Optical study of InP quantum dots in SEMICONDUCTORS
  • 2000-11 Epitaxial deposition of InGaAsP solid solutions in the miscibility gap in SEMICONDUCTORS
  • 2000-03 Photoluminescent and electroluminescent properties of spontaneously forming periodic InGaAsP structures in SEMICONDUCTORS
  • 1999-09 Spontaneously assembling periodic composition-modulated InGaAsP structures in SEMICONDUCTORS
  • 1999-07 Self-organized nanoscale InP islands in an InGaP/GaAs host and InAs islands in an InGaAs/InP host in SEMICONDUCTORS
  • 1999-05 Spontaneously forming periodic composition-modulated InGaAsP structures in SEMICONDUCTORS
  • 1998-11 Investigation of strained InxGa1−xAs/InP quantum wells fabricated by metalorganic compound hydride epitaxy in TECHNICAL PHYSICS LETTERS
  • 1998-08 Self-organized nanosize InP and InAsP clusters obtained by metalorganic compound hydride epitaxy in TECHNICAL PHYSICS LETTERS
  • 1998-06 Self-organizing nanoheterostructures in InGaAsP solid solutions in SEMICONDUCTORS
  • Affiliations

  • Ioffe Institute (current)
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