A I Belogorokhov


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Person Info

NAME

A I

SURNAME

Belogorokhov

Publications in SciGraph latest 50 shown

  • 2013-12 Ferromagnetic semiconducting materials: Methods of studies and control of parameters (Review) in INORGANIC MATERIALS
  • 2013-12 A nanodimensional silicon fabricated using HCl: HF: C2H5OH electrolyte in RUSSIAN MICROELECTRONICS
  • 2013 Advanced Materials for IR Sensors in ADVANCED SENSORS FOR SAFETY AND SECURITY
  • 2012-12 Study of the atomically clean InSe(0001) surface by X-ray photoelectron spectroscopy in RUSSIAN MICROELECTRONICS
  • 2012-01 Acceptor doping of single-walled carbon nanotubes by encapsulation of zinc halogenides in THE EUROPEAN PHYSICAL JOURNAL B
  • 2011-12 Pb1 − xSnxTe epitaxial films for terahertz detectors in RUSSIAN MICROELECTRONICS
  • 2011-06 The characteristics of the nanosized η-TiO2 polymorph in RUSSIAN JOURNAL OF PHYSICAL CHEMISTRY A
  • 2010-09 Synthesis, characterization, and properties of nanoscale titanium dioxide modifications with anatase and η-TiO2 structures in CRYSTALLOGRAPHY REPORTS
  • 2010-05 Shallow and Deep Centers in As-Grown and Annealed MgZnO/ZnO Structures with Quantum Wells in JOURNAL OF ELECTRONIC MATERIALS
  • 2010-02 Study of the electronic structure of single-walled carbon nanotubes filled with cobalt bromide in JETP LETTERS
  • 2009-12 Synthesis of platinum metalloporphyrins and investigation of their electronic structure by photoelectron spectroscopy in JOURNAL OF SURFACE INVESTIGATION: X-RAY, SYNCHROTRON AND NEUTRON TECHNIQUES
  • 2009-05 Persistent photoconductivity in MgZnO alloys in SEMICONDUCTORS
  • 2009-03 Electronic structure and self-assembling processes in platinum metalloporphyrins: photoemission and AFM studies in APPLIED PHYSICS A
  • 2007-02 Polar optical phonons in semiconducting CdS nanocrystals in JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS
  • 2006-10 Infrared absorption by polar optical phonons in a CdS nanocrystal array consisting of quantum dots and quantum wires in JETP LETTERS
  • 2006-10 Spectral features of composite oil-in-water emulsions containing silicon nanoparticles in OPTICS AND SPECTROSCOPY
  • 2006-09 Spectral and adsorption characteristics of plasmachemical silicon carbide in DOKLADY PHYSICAL CHEMISTRY
  • 2006-04 Optical and vibrational properties of CdxHg1-x-yZnyTe solid solutions in PHYSICS OF THE SOLID STATE
  • 2006-03 Band gap and optical properties of the CdxHg1 − x − yZnyTe alloys in ultraviolet and visible spectral regions in SEMICONDUCTORS
  • 2005-11 Control over the UV Spectral Properties of Multiphase Ultradisperse Systems Based on Nanocrystalline Silicon in DOKLADY PHYSICAL CHEMISTRY
  • 2005-07 Structure and Adsorption Properties of Nanocrystalline Silicon in COLLOID JOURNAL
  • 2005-02 Optical properties of porous nanosized GaAs in SEMICONDUCTORS
  • 2004-10 Extracoordination sensitivity of tetraphenylporphyrin complexes to gaseous ammonia in RUSSIAN CHEMICAL BULLETIN
  • 2004-05 Properties of self-organized SiGe nanostructures formed by ion implantation in SEMICONDUCTORS
  • 2004-01 The investigation of structural perfection of CdxHg1−xTe/CdZnTe epitaxial layers by the Raman scattering method in SEMICONDUCTORS
  • 2002-06 Mixed vibrational modes of PbTe nanocrystallites in SEMICONDUCTORS
  • 2002-01 A mechanism of oxygen-induced passivation of porous silicon in the HF: HCl: C2H5OH solutions in SEMICONDUCTORS
  • 2001-09 Optical phonons of circular wires in porous GaP in PHYSICS OF THE SOLID STATE
  • 2001-08 Electrical properties of CdxHg1−xTe/CdZnTe heterostructures in SEMICONDUCTORS
  • 2001-07 Optical properties of Cd1−xZnxTe (0<x<0.1) single crystals in the infrared spectral region in SEMICONDUCTORS
  • 2000-07 Photoelectric properties of Se-doped Cd1.23Zn1.77As2 crystals in INORGANIC MATERIALS
  • 1999-06 The effects of short-range order and natural microinhomogeneities on the FIR optical properties of CdxHg1−xTe in JOURNAL OF ELECTRONIC MATERIALS
  • 1999-05 Absorption of infrared radiation by free charge carriers in n-type Cd1−xZnxTe in SEMICONDUCTORS
  • 1999-02 Optical properties of porous silicon layers processed with a HF:HCI:C2H5OH electrolyte in SEMICONDUCTORS
  • 1998-05 Characteristic features of the IR spectra of amorphous boron-doped hydrated silicon in SEMICONDUCTORS
  • 1989-06 Gap at the Fermi level in the intermetallic vacancy system RBiSn(R=Ti,Zr,Hf) in ZEITSCHRIFT FÜR PHYSIK B CONDENSED MATTER
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