Andrew F Tsatsul'Nikov

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Andrew F



Publications in SciGraph latest 50 shown

  • 2005-06 The optical properties of heterostructures with quantum-confined InGaAsN layers on a GaAs substrate and emitting at 1.3–1.55 μm in SEMICONDUCTORS
  • 2003-07 Theoretical and experimental study of the effect of InAs growth rate on the properties of QD arrays in InAs/GaAs system in SEMICONDUCTORS
  • 2003-05 Structural and optical properties of InAs quantum dots in AlGaAs matrix in SEMICONDUCTORS
  • 2003-02 Optical properties of structures with ultradense arrays of Ge QDs in an Si matrix in SEMICONDUCTORS
  • 2002-11 Room-temperature photoluminescence at 1.55 μm from heterostructures with InAs/InGaAsN quantum dots on GaAs substrates in TECHNICAL PHYSICS LETTERS
  • 2002-11 High efficiency (ηD>80%) long wavelength (λ>1.25 μm) quantum dot diode lasers on GaAs substrates in SEMICONDUCTORS
  • 2002-09 Effect of carrier localization on the optical properties of MBE-grown GaAsN/GaAs heterostructures in SEMICONDUCTORS
  • 2001-09 1.55–1.6 μm electroluminescence of GaAs based diode structures with quantum dots in TECHNICAL PHYSICS LETTERS
  • 2001 Reduction of Defect Density in Structures With InAs-GaAs Quantum Dots Grown at Low Temperature for 1.55 [.proportional]m Range. in MRS ADVANCES
  • 2000-11 The emission from the structures with arrays of coupled quantum dots grown by the submonolayer epitaxy in the spectral range of 1.3–1.4 µm in SEMICONDUCTORS
  • 2000-05 Multilayer structures with quantum dots in the InAs/GaAs system emitting at a wavelength of 1.3 μm in TECHNICAL PHYSICS LETTERS
  • 2000-01 A spatially single-mode laser for a range of 1.25–1.28 μm on the basis of InAs quantum dots on a GaAs substrate in SEMICONDUCTORS
  • 1999-09 Gain characteristics of quantum-dot injection lasers in SEMICONDUCTORS
  • 1999-08 Formation of two-dimensional islands in the deposition of ultrathin InSb layers on a GaSb surface in SEMICONDUCTORS
  • 1999-04 Exciton waveguide and lasing in structures with superfine GaAs quantum wells and InAs submonolayer inclusions in an AlGaAs host in SEMICONDUCTORS
  • 1999-02 Gain in injection lasers based on self-organized quantum dots in SEMICONDUCTORS
  • 1999-02 Influence of growth conditions on the formation and luminescence properties of InGaAs quantum dots in a Si matrix in SEMICONDUCTORS
  • 1998-12 GaAsN/GaAs and InGaAsN/GaAs heterostructures grown by molecular beam epitaxy in TECHNICAL PHYSICS LETTERS
  • 1998-05 Optical orientation and alignment of excitons in quantum dots in PHYSICS OF THE SOLID STATE
  • 1998-05 Formation of InSb quantum dots in a GaSb matrix in JOURNAL OF ELECTRONIC MATERIALS
  • 1998-01 Formation of InAs quantum dots in a GaAs matrix during growth on misoriented substrates in SEMICONDUCTORS
  • 1997-10 Arrays of strained InAs quantum dots in an (In Ga)As matrix, grown on InP substrates by molecular-beam epitaxy in SEMICONDUCTORS
  • 1997-10 Influence of the quality of the heterointerface on the cyclotron resonance spectra of InAs/(AlGa)Sb heterostructures in SEMICONDUCTORS
  • 1997-07 Lateral association of vertically coupled quantum dots in SEMICONDUCTORS
  • 1997-05 Fine structure of excitonic levels in quantum dots in JETP LETTERS
  • 1997-02 Optical properties of submonolayer CdSe-(Zn,Mg)(S,Se) structures in SEMICONDUCTORS
  • 1997-02 Quantum dot injection heterolaser with ultrahigh thermal stability of the threshold current up to 50 °C in SEMICONDUCTORS
  • 1997-01 Modulation of a quantum well potential by a quantum-dot array in SEMICONDUCTORS
  • 1995 Formation of Stacked Self-Assembled InAs Quantum Dots in GaAs Matrix for Laser Applications in MRS ADVANCES
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