Alexander G Kuzmenkov


Ontology type: schema:Person     


Person Info

NAME

Alexander G

SURNAME

Kuzmenkov

Publications in SciGraph latest 50 shown

  • 2020-10-09 1.55-μm-Range Vertical-Cavity Surface-Emitting Lasers, Manufactured by Wafer Fusion of Heterostructures Grown by Solid-Source Molecular-Beam Epitaxy in SEMICONDUCTORS
  • 2019-11 InAlAs/InGaAs/InP High-Electron-Mobility Transistors with a Composite Channel and Higher Breakdown Characteristics in TECHNICAL PHYSICS LETTERS
  • 2019-10 Heterobarrier Varactors with Nonuniformly Doped Modulation Layers in TECHNICAL PHYSICS LETTERS
  • 2019-08-07 Influence of Output Optical Losses on the Dynamic Characteristics of 1.55-μm Wafer-Fused Vertical-Cavity Surface-Emitting Lasers in SEMICONDUCTORS
  • 2019-07 Analysis of the Internal Optical Losses of the Vertical-Cavity Surface-Emitting Laser of the Spectral Range of 1.55 µm Formed by a Plate Sintering Technique in OPTICS AND SPECTROSCOPY
  • 2018-10 Epitaxial InGaAs/InAlAs/AlAs Structures for Heterobarrier Varactors with Low Leakage Current in TECHNICAL PHYSICS LETTERS
  • 2018-01 High-Speed Semiconductor Vertical-Cavity Surface-Emitting Lasers for Optical Data-Transmission Systems (Review) in TECHNICAL PHYSICS LETTERS
  • 2018-01 Emission-Line Width and α-Factor of 850-nm Single-Mode Vertical-Cavity Surface-Emitting Lasers Based on InGaAs/AlGaAs Quantum Wells in SEMICONDUCTORS
  • 2017-11-03 Molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors in SEMICONDUCTORS
  • 2017-10 Precision calibration of the silicon doping level in gallium arsenide epitaxial layers in TECHNICAL PHYSICS LETTERS
  • 2016-10-11 Polarization characteristics of 850-nm vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal oxide current aperture in SEMICONDUCTORS
  • 2016-10 A study of distributed dielectric bragg reflectors for vertically emitting lasers of the near-IR range in TECHNICAL PHYSICS LETTERS
  • 2015-01-08 Study of high-speed semiconductor VCSELs based on AlInGaAs heterostructures with large gain-cavity detuning in SEMICONDUCTORS
  • 2014-12-02 Effect of the photon lifetime on the characteristics of 850-nm vertical-cavity surface-emitting lasers with fully doped distributed Bragg reflectors and an oxide current aperture in SEMICONDUCTORS
  • 2014-01-05 Degradation-robust 850-nm vertical-cavity surface-emitting lasers for 25Gb/s optical data transmission in SEMICONDUCTORS
  • 2013-06-10 Influence of optical losses on the dynamic characteristics of linear arrays of near-infrared vertical-cavity surface-emitting lasers in SEMICONDUCTORS
  • 2011-10-07 Study of the effect of the gate region parameters on static characteristics of microwave field-effect transistors based on pseudomorphic AlGaAs-InGaAs-GaAs heterostructures in SEMICONDUCTORS
  • 2011-06-18 Matrices of 960-nm vertical-cavity surface-emitting lasers in SEMICONDUCTORS
  • 2009-12-24 Generation of π modes in semiconductor vertical-cavity surface-emitting lasers in TECHNICAL PHYSICS LETTERS
  • 2007-10 The use of spatially ordered arrays of etched holes for fabrication of single-mode vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots in SEMICONDUCTORS
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